VTP Process Photodiodes
VTP4085, 4085S
PACKAGE DIMENSIONS inch (mm)
CASE 13 CERAMIC
CHIP ACTIVE AREA: .032 in2 (21 mm2)
PRODUCT DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Large area planar silicon mounted on a two lead
ceramic substrate and coated with a layer of
clear epoxy. Low junction capacitance permits
fast response time.
Storage Temperature:
Operating Temperature:
-20°C to 75°C
-20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
VTP4085
VTP4085S
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
UNITS
Min.
11.4
Typ.
Max.
Min.
11.4
Typ.
Max.
I
Short Circuit Current
I Temperature Coefficient
SC
H = 100 fc, 2850
2850 K
200
.20
15
200
.20
15
µA
%/°C
µA
SC
TC I
SC
2
I
Short Circuit Current
Open Circuit Voltage
100 µW/cm , 940 nm
H = 100 fc, 2850 K
2850 K
SC
V
.33
-2.0
.33
-2.0
15
mV
OC
TC V
V
Temperature Coefficient
mV/°C
nA
OC
OC
I
Dark Current
H = 0, VR = 100 V
H = 0, V = 10 mV
H = 0, V = 10 mV
H = 0, V = 0 V
100
50
D
R
Shunt Resistance
2.0
-11
.35
4.0
-11
.35
MΩ
%/°C
nF
SH
TC R
R
Temperature Coefficient
SH
SH
C
Junction Capacitance
Spectral Application Range
Spectral Response - Peak
Sensitivity
J
λ
400
1100
400
1100
nm
range
λ
925
.55
925
.55
nm
p
S
@ Peak
A/W
R
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
55
