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IXFL32N120P

型号:

IXFL32N120P

描述:

极地HiPerFET功率MOSFET[ Polar HiPerFET Power MOSFET ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

5 页

PDF大小:

135 K

Preliminary Technical Information  
PolarTM HiPerFETTM  
Power MOSFET  
VDSS = 1200V  
ID25 = 24A  
RDS(on) 340mΩ  
300ns  
IXFL32N120P  
( Electrically Isolated Tab)  
trr  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
ISOPLUS i5-PakTM  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1200  
1200  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
G
S
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
Isolated Tab  
D
ID25  
IDM  
TC = 25°C  
24  
A
A
G = Gate  
S = Source  
D
= Drain  
TC = 25°C, Pulse Width Limited by TJM  
100  
IA  
TC = 25°C  
TC = 25°C  
16  
2
A
J
Features  
EAS  
z Silicon Chip on Direct-Copper-Bond  
Substrate  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
20  
V/ns  
W
520  
- High Power Dissipation  
- Isolated Mounting Surface  
- 2500V Electrical Isolation  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z Avalanche Rated  
TJM  
Tstg  
z Fast Intrinsic Diode  
-55 ... +150  
TL  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Advantages  
TSOLD  
VISOL  
z
Easy Assembly  
Space Savings  
High Power Density  
50/60 Hz, RMS, 1 minute  
2500  
3000  
V~  
V~  
z
IISOL 1mA  
t = 1s  
z
FC  
Mounting Force  
40..120/4.5..27  
8
N/lb.  
g
Weight  
Applications  
z
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
3.5  
Typ.  
Max.  
z
Laser Drivers  
z AC and DC Motor Drives  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 1mA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS , VGS = 0V  
V
V
z Robotics and Servo Controls  
6.5  
± 300 nA  
IDSS  
50 μA  
Note 2, TJ = 125°C  
5 mA  
RDS(on)  
VGS = 10V, ID = 16A, Note 1  
340 mΩ  
DS99908B(01/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFL32N120P  
ISOPLUS i5-PakTM (IXFL) Outline  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 16A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate input resistance  
17  
29  
S
Ciss  
Coss  
Crss  
21  
1105  
77  
nF  
pF  
pF  
RGi  
0.84  
Ω
td(on)  
tr  
td(off)  
tf  
70  
62  
88  
51  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 16A  
RG = 1Ω (External)  
PIN 1 = Gate  
PIN 2 = Source  
PIN 3 = Drain  
Tap 4 = Electricall isolated 2500V  
SYM  
INCHES  
MIN  
MILLIMETER  
MAX  
MIN  
MAX  
Qg(on)  
Qgs  
360  
130  
160  
nC  
nC  
nC  
A
0.190  
0.205  
0.118  
0.055  
0.055  
0.072  
0.068  
0.029  
1.040  
0.799  
4.83  
2.59  
5.21  
3.00  
1.40  
1.40  
1.83  
1.73  
0.74  
26.42  
20.29  
VGS = 10V, VDS = 0.5 • VDSS, ID = 16A  
A1  
A2  
b
0.102  
0.046  
1.17  
Qgd  
0.045  
1.14  
b1  
b2  
c
0.063  
1.60  
RthJC  
RthCS  
0.24 °C/W  
°C/W  
0.058  
1.47  
0.15  
0.020  
0.51  
D
1.020  
25.91  
19.56  
3.81 BSC  
E
0.770  
e
0.150 BSC  
Source-Drain Diode  
TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
e1  
L
0.450 BSC  
0.780  
11.43 BSC  
19.81  
0.820  
0.102  
0.235  
0.513  
0.180  
0.130  
0.690  
0.821  
20.83  
2.59  
Min.  
Typ.  
Max.  
L1  
Q
0.080  
0.210  
0.490  
0.150  
0.100  
0.668  
0.801  
2.03  
5.33  
5.97  
IS  
VGS = 0V  
32  
A
A
V
Q1  
R
12.45  
3.81  
13.03  
4.57  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
128  
1.5  
R1  
S
2.54  
3.30  
16.97  
20.34  
17.53  
20.85  
T
trr  
300 ns  
U
0.065  
0.080  
1.65  
2.03  
IF = 25A, -di/dt = 100A/μs  
QRM  
IRM  
1.9  
μC  
VR = 100V, VGS = 0V  
15.0  
A
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Part must be heatsunk for high-temp Ices measurement.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFL32N120P  
Fig. 1. Output Characteristics @ TJ = 25ºC  
J
Fig. 2. Extended Output Characteristics @ T = 25ºC  
70  
60  
50  
40  
30  
20  
10  
0
32  
28  
24  
20  
16  
12  
8
VGS = 10V  
9V  
VGS = 10V  
9V  
8V  
8V  
7V  
4
7V  
0
0
0
0
1
2
3
4
5
6
7
8
9
10  
22  
70  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 16A Value vs.  
Junction Temperature  
J
Fig. 3. Output Characteristics T = 125ºC  
32  
28  
24  
20  
16  
12  
8
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
8V  
VGS = 10V  
I D = 32A  
7V  
6V  
I D = 16A  
4
0
2
4
6
8
10  
12  
14  
16  
18  
20  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 16A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
28  
24  
20  
16  
12  
8
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
4
0
10  
20  
30  
40  
50  
60  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFL32N120P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
125ºC  
- 40ºC  
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
5.0  
0.3  
0
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
1.2  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 600V  
I
I
D = 16A  
G = 10mA  
TJ = 125ºC  
6
TJ = 25ºC  
4
2
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forwar-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
1000  
RDS(on) Limit  
100  
10  
C
iss  
25µs  
100µs  
1ms  
C
C
oss  
1
10ms  
100ms  
TJ = 150ºC  
Tc = 25ºC  
Single Pulse  
0.1  
0.01  
DC  
rss  
f = 1 MHz  
10  
5
10  
15  
20  
25  
30  
35  
10  
100  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFL32N120P  
Fig. 13. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
Pulse Width - Seconds  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_32N120P(99)1-22-10-C  
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