请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

2V7002W

型号：

2V7002W

描述：

小信号MOSFET 60 V 340毫安，单， N.Channel ， SC.70[ Small Signal MOSFET 60 V, 340 mA, Single, N.Channel, SC.70 ]

品牌：

ONSEMI[ ONSEMI ]

页数：

5 页

PDF大小：

108 K

下载PDF手册
2N7002W, 2V7002W  
Small Signal MOSFET  
60 V, 340 mA, Single, N−Channel, SC−70  
Features  
• ESD Protected  
• Low R  
DS(on)  
http://onsemi.com  
• Small Footprint Surface Mount Package  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
Compliant  
(Note 1)  
• 2V Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
60 V  
1.6 W @ 10 V  
2.5 W @ 4.5 V  
340 mA  
Applications  
• Low Side Load Switch  
• Level Shift Circuits  
SIMPLIFIED SCHEMATIC  
• DC−DC Converter  
1
2
Gate  
• Portable Applications i.e. DSC, PDA, Cell Phone, etc.  
3
Drain  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Rating  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
Source  
V
DSS  
(Top View)  
V
GS  
20  
V
Drain Current (Note 1)  
Steady State  
I
D
mA  
MARKING DIAGRAM  
& PIN ASSIGNMENT  
Drain  
T = 25°C  
A
310  
220  
A
T = 85°C  
t < 5 s  
T = 25°C  
A
340  
240  
A
3
T = 85°C  
Power Dissipation (Note 1)  
Steady State  
P
mW  
D
280  
330  
71 MG  
SC−70/SOT−323  
CASE 419  
t < 5 s  
G
Pulsed Drain Current (t = 10 ms)  
I
1.4  
A
DM  
STYLE 8  
p
1
2
Operating Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
Gate  
Source  
J
STG  
71 = Device Code  
Source Current (Body Diode)  
I
250  
260  
mA  
S
M
= Date Code  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
°C  
G
= Pb−Free Package  
L
(Note: Microdot may be in either location)  
Gate−Source ESD Rating  
(HBM, Method 3015)  
ESD  
900  
V
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†
Device  
Package  
Shipping  
2N7002WT1G  
SC−70  
3000/Tape & Reel  
(Pb−Free)  
THERMAL CHARACTERISTICS  
2V7002WT1G  
SC−70  
(Pb−Free)  
3000/Tape & Reel  
Characteristic  
Symbol  
Max  
Unit  
Junction−to−Ambient − Steady State  
R
450  
°C/W  
q
JA  
(Note 1)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Junction−to−Ambient − t ≤ 5 s (Note 1)  
R
375  
q
JA  
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in  
sq [1 oz] including traces)  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 5  
2N7002W/D  
 
2N7002W, 2V7002W  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Units  
OFF CHARACTERISTICS  
Drain−to−Source Breakdown Voltage  
V
V
GS  
= 0 V, I = 250 mA  
60  
V
(BR)DSS  
D
Drain−to−Source Breakdown Voltage  
Temperature Coefficient  
V
/T  
J
71  
mV/°C  
(BR)DSS  
Zero Gate Voltage Drain Current  
I
T = 25°C  
1.0  
15  
mA  
mA  
nA  
mA  
mA  
nA  
nA  
DSS  
J
V
V
= 0 V,  
= 60 V  
GS  
T = 150°C  
J
DS  
T = 25°C  
J
100  
10  
V
GS  
= 0 V,  
= 50 V  
V
DS  
T = 150°C  
J
Gate−to−Source Leakage Current  
I
V
= 0 V, V  
=
20 V  
10 V  
5.0 V  
10  
GSS  
DS  
DS  
DS  
GS  
GS  
GS  
V
= 0 V, V  
=
=
450  
150  
V
= 0 V, V  
ON CHARACTERISTICS (Note 2)  
Gate Threshold Voltage  
V
V
GS  
= V , I = 250 mA  
1.0  
2.5  
V
GS(TH)  
DS  
D
Negative Threshold Temperature  
Coefficient  
V
/T  
4.0  
mV/°C  
GS(TH)  
J
Drain−to−Source On Resistance  
R
V
= 10 V, I = 500 mA  
1.19  
1.33  
530  
1.6  
2.5  
W
DS(on)  
GS  
D
V
GS  
= 4.5 V, I = 200 mA  
D
Forward Transconductance  
CHARGES AND CAPACITANCES  
Input Capacitance  
g
FS  
V
= 5 V, I = 200 mA  
mS  
pF  
DS  
D
C
24.5  
4.2  
2.2  
0.7  
0.1  
0.3  
0.1  
ISS  
V
= 0 V, f = 1 MHz,  
GS  
Output Capacitance  
C
C
OSS  
RSS  
V
DS  
= 20 V  
Reverse Transfer Capacitance  
Total Gate Charge  
Q
nC  
ns  
V
G(TOT)  
Threshold Gate Charge  
Gate−to−Source Charge  
Gate−to−Drain Charge  
Q
G(TH)  
V
GS  
= 4.5 V, V = 10 V;  
DS  
I
D
= 200 mA  
Q
GS  
GD  
Q
SWITCHING CHARACTERISTICS, V = V (Note 3)  
GS  
Turn−On Delay Time  
Rise Time  
t
12.2  
9.0  
d(ON)  
t
r
V
I
= 10 V, V = 25 V,  
DD  
GS  
= 500 mA, R = 25 W  
Turn−Off Delay Time  
Fall Time  
t
55.8  
29  
D
G
d(OFF)  
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS  
Forward Diode Voltage  
V
T = 25°C  
J
0.8  
0.7  
1.2  
SD  
V
= 0 V,  
GS  
I
= 200 mA  
T = 85°C  
J
S
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%  
3. Switching characteristics are independent of operating junction temperatures  
http://onsemi.com  
2
 
2N7002W, 2V7002W  
TYPICAL CHARACTERISTICS  
1.6  
1.2  
0.8  
1.2  
5.0 V  
4.5 V  
V
= 10 V  
GS  
9.0 V  
4.0 V  
8.0 V  
7.0 V  
6.0 V  
0.8  
3.5 V  
T = 25°C  
J
3.0 V  
2.5 V  
0.4  
0
0.4  
0
T = 125°C  
T = −55°C  
J
J
0
2
4
6
0
2
4
6
V
DS  
, DRAIN−TO−SOURCE VOLTAGE (V)  
V
GS  
, GATE−TO−SOURCE VOLTAGE (V)  
Figure 1. On−Region Characteristics  
Figure 2. Transfer Characteristics  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
V
GS  
= 4.5 V  
V
GS  
= 10 V  
T = 125°C  
J
T = 125°C  
J
T = 85°C  
J
T = 85°C  
J
T = 25°C  
J
T = 25°C  
J
T = −55°C  
J
T = −55°C  
J
0.4  
0
0.4  
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
I , DRAIN CURRENT (A)  
D
I , DRAIN CURRENT (A)  
D
Figure 3. On−Resistance vs. Drain Current and  
Figure 4. On−Resistance vs. Drain Current and  
Temperature  
Temperature  
2.4  
2.0  
1.6  
1.2  
2.2  
1.8  
1.4  
I
D
= 0.2 A  
I
= 500 mA  
D
V
GS  
= 4.5 V  
V
= 10 V  
GS  
I
D
= 200 mA  
1.0  
0.6  
0.8  
0.4  
2
4
6
8
10  
−50 −25  
0
25  
50  
75  
100  
125 150  
V
GS  
, GATE−TO−SOURCE VOLTAGE (V)  
T , JUNCTION TEMPERATURE (°C)  
J
Figure 5. On−Resistance vs. Gate−to−Source  
Figure 6. On−Resistance Variation with  
Voltage  
Temperature  
http://onsemi.com  
3
2N7002W, 2V7002W  
TYPICAL CHARACTERISTICS  
30  
5
C
iss  
T = 25°C  
J
I
D
= 0.2 A  
4
3
2
20  
10  
0
T = 25°C  
J
V
GS  
= 0 V  
C
oss  
1
0
C
rss  
0
4
8
12  
16  
20  
0
0.2  
0.4  
0.6  
0.8  
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)  
Qg, TOTAL GATE CHARGE (nC)  
Figure 7. Capacitance Variation  
Figure 8. Gate−to−Source and  
Drain−to−Source Voltage vs. Total Charge  
1.0E−6  
10  
1
V
GS  
= 0 V  
V
GS  
= 0 V  
T = 150°C  
J
1.0E−7  
1.0E−8  
1.0E−9  
1.0E−10  
T = 125°C  
J
T = 85°C  
J
T = 25°C  
J
T = 85°C  
J
0.1  
T = 25°C  
J
0.01  
0.4  
0.6  
0.8  
1.0  
1.2  
5
10 15 20 25 30 35 40 45 50 55 60  
, DRAIN−TO−SOURCE VOLTAGE (V)  
V
SD  
, SOURCE−TO−DRAIN VOLTAGE (V)  
V
DS  
Figure 9. Diode Forward Voltage vs. Current  
Figure 10. Drain−to−Source Leakage Current  
vs. Voltage  
http://onsemi.com  
4
2N7002W, 2V7002W  
PACKAGE DIMENSIONS  
SC−70 (SOT−323)  
CASE 419−04  
ISSUE M  
D
NOTES:  
e1  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3
MILLIMETERS  
INCHES  
NOM  
0.035  
0.002  
0.028 REF  
0.014  
0.007  
0.083  
0.049  
0.051  
E
H
E
DIM  
MIN  
0.80  
0.00  
NOM  
0.90  
0.05  
MAX  
1.00  
0.10  
MIN  
0.032  
0.000  
MAX  
0.040  
0.004  
1
2
A
A1  
A2  
b
c
D
0.7 REF  
0.35  
0.18  
2.10  
1.24  
0.30  
0.10  
1.80  
1.15  
1.20  
0.40  
0.25  
2.20  
1.35  
1.40  
0.012  
0.004  
0.071  
0.045  
0.047  
0.016  
0.010  
0.087  
0.053  
0.055  
b
e
E
e
1.30  
0.65 BSC  
0.425 REF  
2.10  
0.026 BSC  
0.017 REF  
0.083  
e1  
L
c
H
2.00  
2.40  
0.079  
0.095  
E
A2  
A
STYLE 8:  
PIN 1. GATE  
2. SOURCE  
3. DRAIN  
0.05 (0.002)  
L
A1  
SOLDERING FOOTPRINT*  
0.65  
0.025  
0.65  
0.025  
1.9  
0.075  
0.9  
0.035  
0.7  
0.028  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,  
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC  
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any  
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without  
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications  
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC  
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for  
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where  
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and  
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,  
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture  
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
2N7002W/D  
厂商 型号 描述 页数 下载

ONSEMI

 		2V7002K 小信号MOSFET 60 V 380毫安，单，NA ????通道， SOTA ???? 23[ Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23 ] 6 页

ONSEMI

 		2V7002KT1G 小信号MOSFET 60 V 380毫安，单， N.Channel ， SOT.23[ Small Signal MOSFET 60 V, 380 mA, Single, N.Channel, SOT.23 ] 6 页

ONSEMI

 		2V7002L 小信号MOSFET 60 V 115 mA时， N.Channel SOT.23[ Small Signal MOSFET 60 V, 115 mA, N.Channel SOT.23 ] 4 页

ONSEMI

 		2V7002LT1G 小信号MOSFET 60 V 115 mA时， N.Channel SOT.23[ Small Signal MOSFET 60 V, 115 mA, N.Channel SOT.23 ] 4 页

ONSEMI

 		2V7002LT3G 小信号MOSFET 60 V 115 mA时， N.Channel SOT.23[ Small Signal MOSFET 60 V, 115 mA, N.Channel SOT.23 ] 4 页

ONSEMI

 		2V7002WT1G 小信号MOSFET 60 V 340毫安，单， N.Channel ， SC.70[ Small Signal MOSFET 60 V, 340 mA, Single, N.Channel, SC.70 ] 5 页

SEMTECH

 		2V7BC 硅外延平面齐纳二极管[ Silicon Epitaxial Planar Zener Diodes ] 3 页

SEMTECH

 		2V7BCA 硅外延平面齐纳二极管[ Silicon Epitaxial Planar Zener Diodes ] 3 页

SEMTECH

 		2V7BCB 硅外延平面齐纳二极管[ Silicon Epitaxial Planar Zener Diodes ] 3 页

SEMTECH

 		2V7BS 硅平面齐纳二极管[ SILICON PLANAR ZENER DIODES ] 6 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.279525s