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5LN01SP-AC

型号:

5LN01SP-AC

描述:

超高速开关应用[ Ultrahigh-Speed Switching Applications ]

品牌:

ONSEMI[ ONSEMI ]

页数:

4 页

PDF大小:

97 K

Ordering number : ENN6559  
N-Channel Silicon MOSFET  
5LN01SP  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit : mm  
Low ON-resistance.  
Ultrahigh-speed switching.  
2.5V drive.  
2180  
[5LN01SP]  
2.2  
4.0  
0.4  
0.5  
0.4  
0.4  
1
2
3
1.3  
1.3  
1 : Source  
2 : Drain  
3 : Gate  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
3.0  
3.8nom  
SANYO : SPA  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
50  
±10  
0.1  
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
GSS  
I
D
A
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW10µs, duty cycle1%  
0.4  
A
DP  
P
0.25  
150  
W
°C  
°C  
D
Tch  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0  
D GS  
50  
V
µA  
µA  
V
(BR)DSS  
I
V
V
V
V
=50V, V =0  
GS  
10  
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±8V, V =0  
DS  
±10  
V
(off)  
GS  
=10V, I =100µA  
0.4  
1.3  
D
Forward Transfer Admittance  
Marking : YB  
yfs  
=10V, I =50mA  
0.13  
0.18  
S
D
Continued on next page.  
© 2011, SCILLC. All rights reserved.  
Jan-2011, Rev. 0  
Publication Order Number:  
www.onsemi.com  
5LN01SP/D  
5LN01SP  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
=50mA, V =4V  
Unit  
min  
max  
7.8  
R
DS  
R
DS  
R
DS  
(on)1  
(on)2  
(on)3  
I
D
I
D
I
D
6
GS  
Static Drain-to-Source On-State Resistance  
=30mA, V =2.5V  
GS  
7.1  
9.9  
20  
=10mA, V =1.5V  
GS  
10  
Input Capacitance  
Ciss  
V
V
V
=10V, f=1MHz  
=10V, f=1MHz  
=10V, f=1MHz  
6.6  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
DS  
DS  
DS  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Coss  
Crss  
4.7  
1.7  
t (on)  
d
See specified Test Circuit  
See specified Test Circuit  
See specified Test Circuit  
See specified Test Circuit  
18  
t
r
42  
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
190  
105  
1.57  
0.20  
0.32  
0.85  
t
f
Total Gate Charge  
Qg  
V
DS  
V
DS  
V
DS  
=10V, V =10V, I =100mA  
GS  
D
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Diode Forward Voltage  
Qgs  
Qgd  
=10V, V =10V, I =100mA  
GS  
D
=10V, V =10V, I =100mA  
GS  
D
V
I =100mA, V =0  
S
1.2  
SD  
GS  
Switching Time Test Circuit  
V
=25V  
DD  
V
IN  
4V  
0V  
I
=50mA  
L
D
V
R =500  
IN  
PW=10µs  
D.C.1%  
D
V
OUT  
G
5LN01SP  
P. G  
50Ω  
S
I
-- V  
I
-- V  
GS  
D
DS  
D
0.10  
0.09  
0.08  
0.07  
0.06  
0.05  
0.04  
0.03  
0.20  
0.18  
0.16  
0.14  
V
=10V  
DS  
3.5V  
4.0V  
V
=1.5V  
GS  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0.01  
0
0.02  
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
Drain-to-Source Voltage, V  
-- V  
IT00054  
Gate-to-Source Voltage, V  
GS  
-- V  
IT00055  
DS  
R
DS  
(on) -- V  
R (on) -- I  
DS  
GS  
D
12  
100  
V
=4V  
Ta=25°C  
GS  
7
5
11  
10  
9
3
2
8
7
6
5
4
50mA  
10  
I
=30mA  
D
Ta=75°C  
25°C  
7
5
--25°C  
3
2
3
2
1.0  
0.01  
0
1
2
3
4
5
6
7
8
9
10  
2
3
5
7
2
3
0.1  
Gate-to-Source Voltage, V  
GS  
-- V  
IT00056  
Drain Current, I -- A  
IT00057  
D
Rev.0 I Page 2 of 4 I www.onsemi.com  
5LN01SP  
R (on) -- I  
DS  
R (on) -- I  
DS  
D
D
100  
100  
V =2.5V  
GS  
V =1.5V  
GS  
7
7
5
5
3
2
3
2
Ta=75°C  
Ta=75°C  
--25°C  
10  
10  
7
5
7
5
--25°C  
25°C  
25°C  
3
2
3
2
1.0  
0.01  
1.0  
0.001  
2
3
5
7
2
3
2
3
5
7
2
3
0.1  
0.01  
Drain Current, I -- A  
IT00058  
Drain Current, I -- A  
IT00059  
D
D
R (on) -- Ta  
DS  
yfs-- I  
D
14  
1.0  
V =10V  
DS  
7
5
12  
10  
8
3
2
0.1  
6
4
7
5
3
2
2
0
0.01  
0.01  
2
3
5
7
2
3
--60 --40 --20  
0
20  
40  
60  
80 100 120 140 160  
0.1  
Ambient Temperature, Ta -- °C  
IT00060  
Drain Current, I -- A  
IT00061  
D
I
-- V  
SW Time -- I  
F
SD  
D
1000  
3
2
V
V
=25V  
=4V  
V =0  
GS  
DD  
GS  
7
5
3
2
t (off)  
d
0.1  
t
7
5
f
100  
7
5
t
r
3
2
3
2
t (on)  
d
0.01  
0.5  
10  
0.01  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
IT00062  
2
3
5
7
0.1  
IT00063  
Diode Forward Voltage, V  
-- V  
Drain Current, I -- A  
SD  
D
Ciss, Coss, Crss -- V  
V
-- Qg  
DS  
GS  
10  
100  
f=1MHz  
V
=10V  
=100mA  
DS  
7
9
8
7
I
D
5
3
2
6
5
4
3
2
10  
Ciss  
7
5
Coss  
3
2
1
0
Crss  
1.0  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
Drain-to-Source Voltage, V  
-- V  
IT00064  
Total Gate Charge, Qg -- nC  
IT00065  
DS  
Rev.0 I Page 3 of 4 I www.onsemi.com  
5LN01SP  
P
-- Ta  
D
0.3  
0.25  
0.2  
0.15  
0.1  
0.05  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- °C  
IT02005  
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any  
products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of  
the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. SCILLC strives to supply  
high-quality high-reliability products and recommends adopting safety measures when designing equipment to avoid accidents or malfunctions. Such measures include but are not limited to  
protective circuits and error prevention circuits for safe design, redundant design, and structural design. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications  
can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals," must be validated for each customer application by customer’s  
technical experts. SCILLC shall not be held liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and  
products mentioned above. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components  
in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create  
a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC  
and its officers, employees, subsidiaries, affi liates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,  
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  
SCILLC is an Equal Opportunity/Affi rmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
www.onsemi.com  
5LN01SP/D  
厂商 型号 描述 页数 下载

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5LN01C-TB-E 通用开关设备的应用[ General-Purpose Switching Device Applications ] 7 页

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5LN01C-TB-H 通用开关设备的应用[ General-Purpose Switching Device Applications ] 7 页

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5LN01C_12 通用开关设备的应用[ General-Purpose Switching Device Applications ] 7 页

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5LN01M 超高速开关应用[ Ultrahigh-Speed Switching Applications ] 4 页

SANYO

5LN01M-TL-E 通用开关设备的应用[ General-Purpose Switching Device Applications ] 7 页

SANYO

5LN01M-TL-H 通用开关设备的应用[ General-Purpose Switching Device Applications ] 7 页

SANYO

5LN01M_06 通用开关设备的应用[ General-Purpose Switching Device Applications ] 4 页

SANYO

5LN01M_12 通用开关设备的应用[ General-Purpose Switching Device Applications ] 7 页

SANYO

5LN01N [ 5LN01N ] 4 页

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