Product specification
BZX84C27
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
Features
3
Planar Die Construction
350mW Power Dissipation
Ideally Suited for Automated Assembly Processes
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Forward Voltage at IF = 10 mA
Power Dissipation *
Symbol
VF
Rating
0.9
Unit
V
PD
350
mW
Junction Temperature
Tj
150
Storage Temperature Range
Thermal Resistance Junction to Ambient Air *
TS
-65 to + 150
417
RthA
/W
*Device mounted on FR-4 PC board with recommended pad layout,
Electrical Characteristics Ta = 25 (unless otherwise noted)
Typical Temperature
Coefficient
@ IZT
Maximum
Reverse
Current
*1
Zener Voltage
Maximum Zener
Impedance
*2
Range
*1
Type
mV/
Number
ZZT @
VZ @ IZT
ZZK @ IZK
IZT
IR
VR
IZT
Min
Max
25.3
Nom (V)
27
Min (V) Max (V)
mA
2.0
mA
0.5
V
A
BZX84C27
25.1
28.9
80
300
0.1
18.9
21.4
*1. Short duration test pulse used to minimize self-heating effect.
*2. f = 1KHz.
Marking
Marking
Y10
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sales@twtysemi.com
4008-318-123
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