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3STL2540

型号：

3STL2540

描述：

低电压高性能PNP功率晶体管[ Low voltage high performance PNP power transistor ]

品牌：

STMICROELECTRONICS[ ST ]

页数：

11 页

PDF大小：

235 K

下载PDF手册
3STL2540  
Low voltage high performance PNP power transistor  
Datasheet — production data  
Features  
■ Very low collector-emitter saturation voltage  
■ High current gain characteristic  
■ Small, thin, leadless SMD plastic package with  
3
excellent thermal behavior  
Applications  
2
1
1
2
■ Power management  
■ DC-DC converters  
PowerFLAT™ 2 x 2 3L  
Description  
This device is an PNP transistor manufactured  
using new low voltage planar technology with  
double metal process. The result is a transistor  
which boasts exceptionally high gain performance  
coupled with very low saturation voltage.  
Figure 1.  
Internal schematic diagram  
Table 1.  
Order code  
3STL2540  
Device summary  
Marking  
Package  
Packaging  
L2540  
PowerFLAT™ 2 x 2  
Tape and reel  
May 2012  
Doc ID 022059 Rev 2  
1/11  
This is information on a product in full production.  
www.st.com  
11  
Absolute maximum ratings  
3STL2540  
1
Absolute maximum ratings  
Table 2.  
Symbol  
Absolute maximum ratings  
Parameter  
Value  
Unit  
VCBO  
VCEO  
VEBO  
IC  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
-40  
-40  
V
V
Emitter-base voltage  
Collector current  
(IC = 0)  
-6  
V
-5  
A
ICM  
Collector peak current (tP < 5 ms)  
Base current  
-10  
A
IB  
-0.5  
-1  
A
IBM  
Base peak current (tP < 5 ms)  
Total dissipation at TA = 25 °C  
Storage temperature  
A
(1)  
PTOT  
1.2  
W
°C  
°C  
TSTG  
TJ  
-65 to 150  
150  
Max. operating junction temperature  
1. Device mounted on a PCB area of 1 cm²  
Table 3.  
Symbol  
Thermal data  
Parameter  
Value  
Unit  
(1)  
RthJA  
Thermal resistance junction-ambient max  
Thermal resistance junction-ambient max  
Thermal resistance junction-case max  
104  
75  
°C/W  
°C/W  
°C/W  
(2)  
RthJA  
RthJC  
45  
1. Device mounted on a PCB area of 1 cm²  
2. Device mounted on a PCB area of 6 cm²  
2/11  
Doc ID 022059 Rev 2  
3STL2540  
Electrical characteristics  
2
Electrical characteristics  
TJ = 25 °C; unless otherwise specified.  
Table 4.  
Symbol  
Electrical characteristics  
Parameter  
Test conditions  
VCB = - 40 V  
VEB = - 6 V  
Min. Typ. Max. Unit  
Collector cut-off current  
(IE = 0)  
ICBO  
IEBO  
-100  
-100  
nA  
Emitter cut-off current  
(IC = 0)  
nA  
VBE(on) Base-emitter on voltage  
VCE = - 2 V  
IC = - 100 mA  
-670  
mV  
-200  
IC = - 1 A  
IC = - 2 A  
IB = - 10 mA  
IB = - 100 mA  
VC(E1()sat) Collector-emitter saturation  
voltage  
-150  
mV  
mV  
IC = - 5 A _ IB = - 250 mA  
-300  
VB(E1()sat) Base-emitter saturation  
voltage  
IC = - 1 A _ IB = - 10 mA  
800  
V
CE = - 2 V IC = - 0.5 A  
280  
210  
100  
VCE = - 2 V IC = - 2 A  
VCE = - 2 V IC = - 5 A  
(1)  
hFE  
DC current gain  
V
CE = -0.2 ÷ - 2 V IC = - 1 A  
100  
900  
Tj = -30 °C ÷ 150 °C  
Resistive load  
Delay time  
Rise time  
25  
140  
290  
60  
ns  
ns  
ns  
ns  
td  
tr  
IC = - 2 A  
VBE(off) = 5 V,  
- IB(on) = IB(off) = 200 mA  
VCC = - 10 V  
ts  
tf  
Storage time  
Fall time  
fT  
Transition frequency  
IC = - 0.1 A __ VCE = - 10 V  
130  
MHz  
1. Pulse test: pulse duration ≤300 µs, duty cycle ≤2 %.  
Doc ID 022059 Rev 2  
3/11  
Electrical characteristics  
3STL2540  
2.1  
Electrical characteristics (curves)  
Figure 2.  
DC current gain (VCE=-2 V)  
Figure 3.  
DC current gain (VCE=-5 V)  
H
H&%  
&%  
ꢀꢁꢁꢁ  
ꢀꢁꢁꢁ  
ꢉꢀꢈꢁ  
#
4
ꢉꢀꢈꢁ  
#
4
*
*
ꢉꢊꢈ  
#
4
ꢉꢊꢈ  
#
4
*
*
ꢉ ꢋꢄꢁ  
#
4
ꢉ ꢋꢄꢁ  
#
4
*
*
ꢀꢁꢁ  
ꢀꢁꢁ  
ꢀꢁ  
ꢁꢅꢁꢀ  
ꢀꢁ  
ꢁꢅꢁꢀ  
ꢁꢅꢀ  
ꢀ
)C ꢆ!ꢇ  
!-ꢀꢁꢂꢃꢄVꢀ  
)C ꢆ!ꢇ  
!-ꢀꢁꢂꢃꢌVꢀ  
ꢁꢅꢀ  
ꢀ
Figure 4.  
Collector-emitter saturation Figure 5.  
voltage (VCEsat @ hFE=20)  
Collector-emitter saturation  
voltage (VCEsat @ hFE=100)  
6CEꢆSATꢇ  
ꢆ6ꢇ  
6CEꢆSATꢇ  
ꢆ6ꢇ  
ꢉꢋꢄꢁ  
#
4
*
ꢉꢀꢈꢁ  
#
4
ꢁꢅꢌ  
*
ꢀꢅꢍ  
ꢉꢀꢈꢁ  
#
4
*
ꢉꢊꢈ  
#
4
*
ꢁꢅꢄ  
ꢁꢅꢊ  
ꢁꢅꢀ  
ꢁ
ꢀꢅꢊ  
ꢁꢅꢃ  
ꢁꢅꢌ  
ꢁ
ꢉꢊꢈ  
#
4
*
ꢉ ꢋꢄꢁ  
#
4
*
ꢁꢅꢁꢀ  
ꢁꢅꢀ  
ꢀ
ꢁꢅꢁꢀ  
ꢁꢅꢀ  
ꢀ
)C ꢆ!ꢇ  
!-ꢀꢁꢂꢃꢍVꢀ  
)C ꢆ!ꢇ  
!-ꢀꢁꢂꢃꢈVꢀ  
Figure 6.  
Base-emitter saturation  
voltage (Vbe(sat) @ hFE=20)  
Figure 7. Base-emitter saturation  
voltage (Vbe(sat) @ hFE=100)  
6BEꢆSATꢇ  
ꢆ6ꢇ  
ꢆ6ꢇ  
6BEꢆSATꢇ  
ꢉ ꢋꢄꢁ  
4
#
ꢉ ꢋꢄꢁ  
#
4
*
*
ꢉꢊꢈ  
*
#
4
ꢉꢊꢈ  
#
4
*
ꢁꢅꢂ  
ꢁꢅꢎ  
ꢁꢅꢈ  
ꢁꢅꢄ  
ꢁꢅꢂ  
ꢉꢀꢈꢁ  
#
4
*
ꢉ
ꢀꢈꢁ  
#
4
*
ꢁꢅꢎ  
ꢁꢅꢈ  
ꢁꢅꢄ  
ꢁꢅꢁꢀ  
ꢁꢅꢀ  
ꢀ
)C ꢆ!ꢇ  
ꢁꢅꢁꢀ  
ꢁꢅꢀ  
ꢀ
)C ꢆ!ꢇ  
!-ꢀꢁꢂꢃꢎVꢀ  
!-ꢀꢁꢂꢃꢃVꢀ  
4/11  
Doc ID 022059 Rev 2  
3STL2540  
Electrical characteristics  
Figure 8.  
Resistive load switching  
times  
Figure 9.  
Capacitance curves  
(f=1 MHz)  
T ꢆNSꢇ  
# ꢆP&ꢇ  
TS  
#BE  
TR  
ꢀꢁꢁ  
ꢀꢁꢁ  
TF  
#BC  
TD  
6## ꢉ ꢋꢀꢁ  
6
6"%ꢆOFFꢇ ꢉ ꢈ 6  
H&% ꢉ ꢀꢁ  
ꢀꢁ  
ꢁꢅꢁꢀ  
ꢀꢁ  
ꢁꢅꢀ  
ꢀ
ꢀꢁ  
62 ꢆ6ꢇ  
ꢁ
ꢁꢅꢈ  
ꢀ
ꢀꢅꢈ  
ꢊ
ꢊꢅꢈ  
ꢄ
)# ꢆ!ꢇ  
!-ꢀꢁꢂꢃꢂVꢀ  
!-ꢀꢁꢂꢂꢁVꢀ  
Doc ID 022059 Rev 2  
5/11  
Package mechanical data  
3STL2540  
3
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in different grades of  
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®  
specifications, grade definitions and product status are available at: www.st.com.  
ECOPACK® is an ST trademark.  
6/11  
Doc ID 022059 Rev 2  
3STL2540  
Package mechanical data  
Table 5.  
PowerFLAT™ 2 x 2 3L mechanical data  
mm.  
Typ.  
Dim.  
Min.  
Max.  
A
A1  
A3  
b
0.55  
0.00  
0.60  
0.02  
0.10  
0.30  
2.00  
2.00  
1.30  
1.05  
1.50  
0.25  
0.30  
0.40  
0.65  
0.05  
0.25  
1.90  
1.90  
1.20  
0.95  
1.40  
0.20  
0.20  
0.35  
0.15  
0.35  
2.10  
2.10  
1.40  
1.15  
1.60  
0.30  
0.40  
0.45  
D
E
e
D2  
E2  
H
K
L
R
Doc ID 022059 Rev 2  
7/11  
Package mechanical data  
Figure 10. PowerFLAT™ 2 x 2 3L drawing  
3STL2540  
BOTTOM VIEW  
H
L
K
D2  
TOP VIEW  
A
D
LASER MARK PIN#1 ID  
(A3)  
A1  
8329590_REV_B  
8/11  
Doc ID 022059 Rev 2  
3STL2540  
Packaging mechanical data  
4
Packaging mechanical data  
Figure 11. PowerFLAT™ 2 x 2 3L footprint (dimension in mm.)  
ꢊꢅꢀꢁ  
ꢁꢅꢈꢁ  
ꢀꢅꢀꢈ  
ꢁꢅꢊꢈꢁ  
ꢁꢅꢎꢁ  
ꢃꢄꢊꢂꢈꢂꢁ?2%6?"  
Doc ID 022059 Rev 2  
9/11  
Revision history  
3STL2540  
5
Revision history  
Table 6.  
Date  
Document revision history  
Revision  
Changes  
07-Dec-2011  
22-May-2012  
1
2
Initial release  
Document status promoted from preliminary data to production data  
10/11  
Doc ID 022059 Rev 2  
3STL2540  
Please Read Carefully:  
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the  
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any  
time, without notice.  
All ST products are sold pursuant to ST’s terms and conditions of sale.  
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no  
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this  
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products  
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such  
third party products or services or any intellectual property contained therein.  
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED  
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED  
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS  
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.  
UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT  
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING  
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,  
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE  
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.  
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void  
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any  
liability of ST.  
ST and the ST logo are trademarks or registered trademarks of ST in various countries.  
Information in this document supersedes and replaces all information previously supplied.  
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.  
© 2012 STMicroelectronics - All rights reserved  
STMicroelectronics group of companies  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America  
www.st.com  
Doc ID 022059 Rev 2  
11/11  
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 		3STR1630 低电压高性能NPN功率晶体管[ Low voltage high performance NPN power transistor ] 10 页

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