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3SK299-A

型号:

3SK299-A

品牌:

NEC[ NEC ]

页数:

6 页

PDF大小:

56 K

DATA SHEET  
MES FIELD EFFECT TRANSISTOR  
3SK299  
RF AMP. FOR UHF TV TUNER  
N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR  
4 PIN SMALL MINI MOLD  
FEATURES  
PACKAGE DIMENSIONS  
Suitable for use as RF amplifier in UHF TV tuner.  
Low Crss : 0.02 pF TYP.  
in millimeters  
2.1±0.2  
High GPS : 20 dB TYP.  
1.25±0.1  
Low NF : 1.1 dB TYP.  
4 PIN SMALL MINI MOLD PACKAGE  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Drain to Source Voltage  
Gate1 to Source Voltage  
Gate2 to Source Voltage  
Drain Current  
VDSX  
VG1S  
VG2S  
ID  
13  
V
V
–4.5  
–4.5  
V
40  
mA  
mW  
°C  
°C  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
PT  
120  
1. Source  
2. Drain  
3. Gate 2  
4. Gate 1  
Tch  
125  
Tstg  
–55 to +125  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTIC  
Drain Current  
SYMBOL  
IDSX  
MIN.  
TYP.  
MAX.  
10  
UNIT  
µA  
mA  
V
TEST CONDITIONS  
VDS = 13 V, VG1S = –4 V, VG2S = 0  
VDS = 5 V, VG2S = 0, VG1S = 0  
VDS = 5 V, VG2S = 0 , ID = 100 µA  
VDS = 5 V, VG1S = 0, ID = 100 µA  
VDS = 0, VG1S = –4 V, VG2S = 0  
VDS = 0, VG2S = –4 V, VG1S = 0  
Drain Current  
IDSS  
5
20  
40  
Gate1 to Source Cutoff Voltage  
Gate2 to Source Cutoff Voltage  
Gate1 Reverse Current  
Gate2 Reverse Current  
Forward Transfer Admittance  
VG1S(off)  
VG2S(off)  
IG1SS  
–3.5  
–3.5  
10  
V
µA  
µA  
ms  
IG2SS  
10  
|yfs|  
18  
25  
35  
VDS = 5 V, VG2S = 1 V, ID = 10 mA  
f = 1.0 kHz  
Input Capacitance  
Reverse Transfer Capacitance  
Power Gain  
Ciss  
Crss  
GPS  
NF  
0.5  
1.0  
0.02  
20.0  
1.1  
1.5  
pF  
pF  
dB  
dB  
VDS = 5 V, VG2S = 1 V, ID = 10 mA  
f = 1 MHz  
0.03  
16.0  
VDS = 5 V, VG2S = 1 V, ID = 10 mA  
f = 900 MHz  
Noise Figure  
2.5  
IDSS Classification  
Unit: mA  
U74  
Class  
Marking  
IDSS  
U71  
U71  
U72  
U72  
U73  
U73  
U74  
5 to 15  
10 to 25  
20 to 35  
30 to 40  
Document No. P11034EJ1V0DS00 (1st edition)  
Date Published December 1995 P  
Printed in Japan  
1995  
©
3SK299  
TYPICAL CHARACTERISTICS (TA = 25 ˚C)  
TOTAL POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
DRAIN CURRENT vs.  
GATE1 TO SOURCE VOLTAGE  
30  
20  
V
DS = 5 V  
400  
300  
200  
100  
V
G2S = 1.0 V  
0.5 V  
0 V  
10  
0
–0.5 V  
0
25  
50  
75  
100  
125  
–1.0  
0
+1.0  
T
A
– Ambient Temperature – ˚C  
VG1S – Gate 1 to Source Voltage – V  
FORWARD TRANSFER ADMITTANCE vs.  
GATE1 TO SOURCE VOLTAGE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
30  
20  
30  
20  
V
DS = 5 V  
VDS = 5 V  
f = 1 kHz  
f = 1 kHz  
V
G2S = 1.0 V  
VG2S = 1.0 V  
0.5 V  
0 V  
V
G2S = 0.5 V  
10  
0
10  
–0.5 V  
–1.0  
0
+1.0  
0
10  
20  
30  
VG1S – Gate 1 to Source Voltage – V  
ID  
– Drain Current – mA  
INPUT CAPACITANCE vs.  
GATE2 TO SOURCE VOLTAGE  
POWER GAIN AND NOISE FIGURE vs.  
GATE2 TO SOURCE VOLTAGE  
2.0  
10  
30  
V
DS = 5 V  
V
DS = 5 V  
f = 1 MHz  
VG2S = 1 V  
at I  
f = 900 MHz  
D
= 10 mA  
15  
0
G
PS  
V
G2S = 1 V at I  
G2S = 1 V at I  
D
D
= 10 mA  
= 5 mA  
5
1.0  
–15  
V
–30  
–45  
NF  
0
–1.0  
0
0
+1.0  
–3.0  
–2.0  
–1.0  
0
+1.0  
+2.0  
V
G2S – Gate 2 to Source Voltage – V  
VG2S – Gate 2 to Source Voltage – V  
2
3SK299  
POWER GAIN AND NOISE FIGURE vs.  
DRAIN TO SOURCE VOLTAGE  
POWER GAIN AND NOISE FIGURE vs.  
DRAIN CURRENT  
10  
25  
V
DS = 5 V  
V
G2S = 1 V  
20  
G
PS  
20  
10  
f = 900 MHz  
G
PS  
20  
15  
5
V
V
V
G2S = 1 V  
G2S = 0.5 V  
G2S = 2 V  
10  
5
5
I
D
= 10 mA  
f = 900 MHz  
NF  
NF  
0
5
10  
0
0
ID – Drain Current – mA  
0
5
10  
VDS – Drain to Source Voltage – V  
S-PARAMETER (VDS = 5 V, VG2S = 1 V, I  
D
= 10 mA)  
FREQUENCY  
MHz  
S11  
S21  
S12  
S22  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
100.0000  
200.0000  
300.0000  
400.0000  
500.0000  
600.0000  
700.0000  
800.0000  
900.0000  
1000.0000  
1100.0000  
1200.0000  
0.999  
1.000  
0.998  
0.974  
1.005  
0.942  
0.968  
0.920  
0.952  
0.898  
0.915  
0.879  
–3.3  
–7.2  
2.359  
2.389  
2.313  
2.233  
2.420  
2.300  
2.332  
2.229  
2.447  
2.303  
2.348  
2.367  
177.2  
169.3  
164.4  
160.0  
158.4  
150.0  
145.5  
141.5  
136.8  
131.1  
125.8  
123.5  
0.006  
0.004  
0.000  
0.004  
0.007  
0.003  
0.004  
0.008  
0.004  
0.001  
0.004  
0.000  
–122.3  
123.0  
–145.0  
79.2  
29.7  
65.0  
45.5  
80.1  
8.3  
0.969  
0.981  
0.979  
0.967  
0.999  
0.958  
0.997  
0 957  
0.999  
0.968  
0.984  
0.989  
–1.3  
–2.9  
–3.3  
5.6  
–9.3  
–13.4  
–15.7  
–19.1  
–22.2  
–25.2  
28.9  
–5.8  
–7.7  
–8.5  
–9.4  
–12.5  
–11.1  
–14.8  
–13.0  
–29.4  
–35.1  
–35.2  
50.9  
71.4  
91.1  
3
3SK299  
900 MHz GPS AND NF TEST CIRCUIT  
VG2S (1 V)  
1 000 pF  
47 k  
1 000 pF  
to 10 pF  
to 10 pF  
INPUT  
OUTPUT  
to 10 pF  
50 Ω  
50 Ω  
to 10 pF  
L2  
L1  
47 kΩ  
RFC  
1 000 pF  
1 000 pF  
L1, L2 35 × 5 × 0.2 mm  
VG1S  
VDD (5 V)  
VDS = 5 V, VG2S = 1 V, ID = 10 mA  
4
3SK299  
[MEMO]  
5
3SK299  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
“Standard“, “Special, and “Specific“. The Specific quality grade applies only to devices developed based on  
a customer designated “quality assurance program“ for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices in Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  
厂商 型号 描述 页数 下载

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3SK102 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | MICRO -X\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | MICRO-X ] 1 页

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3SK107 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

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3SK107E 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK107F 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK107G 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 11 页

ETC

3SK108 晶体管| MOSFET | N沟道\n[ TRANSISTOR | MOSFET | N-CHANNEL ] 1 页

ETC

3SK108Q 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

3SK108R 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

ETC

3SK108S 晶体管| MOSFET | N沟道| 20V V( BR ) DSS |我30MA (D ) | DIP\n[ TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | DIP ] 1 页

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