SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 NOVEMBER 1995
FZT603
FEATURES
*
*
*
2A continuous current
Useful hFE up to 6A
Fast Switching
C
E
PARTMARKING DETAIL DEVICE TYPE IN FULL
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
100
80
10
6
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Peak Pulse Current
A
Continuous Collector Current
Power Dissipation
IC
2
A
Ptot
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
V(BR)CBO
MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
100
240
110
16
V
V
V
IC=100µA
IC=10mA*
IE=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
80
Emitter-Base Breakdown
Voltage
10
Collector Cut-Off Current
0.01
10
V
CB=80V
µA
µA
VCB=80V, T =100°C
amb
Emitter Cut-Off Current
Collector Cut-Off Current
IEBO
0.1
10
VEB=8V
µA
µA
ICES
VCES=80V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.79
0.80
0.88
0.99
0.86
0.88
0.90
1.00
1.13
V
V
V
V
V
IC=0.25A, IB=0.25mA*
IC=0.4A, IB=0.4mA*
IC=1A, IB=1mA*
IC=2A, IB=20mA*
IC=2A, IB=20mA
Tj=150°C
