SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 - NOVEMBER 1995
FZT749
FEATURES
*
*
*
*
25 Volt VCEO
C
3 Amp continuous current
Low saturation voltage
Excellent hFE specified up to 6A (pulsed).
E
COMPLEMENTARY TYPE
PARTMARKING DETAIL
FZT649
FZT749
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
-35
-25
-5
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
V
Emitter-Base Voltage
V
Peak Pulse Current
-8
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
IC
-3
A
Ptot
2
W
Tj:Tstg
-55 to +150
°C
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
IC=-100µA
Breakdown Voltages
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-35
-25
-5
V
V
V
IC=-10mA*
IE=-100µA
Collector Cut-Off
Currents
-0.1
-10
VCB=-30V
µA
µA
VCB=-30V,T =100°C
IEBO
-0.1
VEB=4V
µA
Saturation Voltages
VCE(sat)
-0.12
-0.40
-0.3
-0.6
V
V
IC=-1A, IB=-100mA*
IC=-3A, IB=-300mA*
VBE(sat)
VBE(on)
-0.9
-0.8
-1.25
-1.0
V
V
IC=-1A, IB=-100mA*
IC=-1A, VCE=-2V*
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
hFE
70
100
75
200
200
150
50
IC=-50mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
300
100
15
Transition Frequency
fT
100
160
MHz
IC=-100mA, VCE=-5V
f=100MHz
Output Capacitance
Switching Times
Cobo
ton
55
pF
ns
ns
VCB=-10V f=1MHz
40
IC=-500mA, VCC=-10V
IB1=IB2=-50mA
toff
450
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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