SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
FZT489
ISSUE 3 - NOVEMBER 1995
✪
C
COMPLEMENTARY TYPE
PARTMARKING DETAIL
FZT589
FZT489
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
50
Collector-Emitter Voltage
30
V
Emitter-Base Voltage
5
V
Continuous Collector Current
Peak Pulse Current
1
A
ICM
4
A
Base Current
IB
200
2
mA
W
°C
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
Ptot
Tj:Tstg
= 25°C).
-55 to +150
amb
PARAMETER
SYMBOL MIN.
MAX.
UNIT
V
CONDITIONS.
IC=100µA
IC=10mA*
IE=100µA
VCB=30V
Breakdown Voltages
V(BR)CBO
VCEO(sus)
V(BR)EBO
ICBO
50
30
5
V
V
Collector Cut-Off Current
Emitter Cut-Off Current
100
100
100
nA
nA
nA
ICES
VCES=30V
VEB=4V
IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
0.3
0.6
V
V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
1.1
V
IC=1A, IB=100mA*
Base-Emitter
Turn On Voltage
1.0
V
IC=1A, VCE=2V*
Static Forward Current
Transfer Ratio
100
100
60
IC=1mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=4A, VCE=2V*
300
10
20
Transition Frequency
fT
150
MHz
pF
IC=50mA, VCE=10V
f=100MHz
Collector-Base
Breakdown Voltage
Cobo
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FMMT449 datasheet
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