SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 JANUARY 1996
FZT757
FEATURES
C
*
*
Low saturation voltage
300V VCEO
E
COMPLEMENTARY TYPE - FZT657
PARTMARKING DETAIL - FZT757
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-300
Collector-Emitter Voltage
-300
V
Emitter-Base Voltage
-5
V
Peak Pulse Current
-1
-0.5
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
IC
A
Ptot
2
W
°C
Tj:Tstg
-55 to +150
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-300
-300
-5
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V
V
IC=-10mA*
Emitter-Base Breakdown V(BR)EBO
Voltage
IE=-100µA
Collector Cut-Off Current ICBO
-0.1
VCB=-200V
µA
Emitter Cut-Off Current
IEBO
-0.1
-0.5
VEB=-3V
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
V
IC=-100mA, IB=-10mA*
IC=-100mA, IB=-10mA*
IC=-100mA, VCE=-5V*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-1.0
-1.0
V
V
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
40
50
IC=-10mA, VCE =-5V*
IC=-100mA, VCE =-5V*
Transition Frequency
fT
30
MHz
pF
IC=-10mA, VCE =-20V
f=20MHz
Output Capacitance
Cobo
20
VCB=-20V, f=1MHz
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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