SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FZT694B
FEATURES
*
*
High VCEO / Very Low Saturation Voltage
Gain of 400 at IC=200mA
C
APPLICATIONS
*
*
Darlington replacement
Relay / solenoid driver
E
PARTMARKING DETAIL -
FZT694B
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
120
Collector-Emitter Voltage
120
V
Emitter-Base Voltage
5
V
Peak Pulse Current
2
A
Continuous Collector Current
Power Dissipation Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
IC
1
2
A
Ptot
W
°C
Tj:Tstg
= 25°C)
-55 to +150
amb
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Breakdown Voltages
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
120
120
5
V
IC=100µA
IC=10mA*
IE=100µA
V
V
Collector Cut-Off Current
Emitter Cut-Off Current
0.1
0.1
VCB=100V
µA
µA
IEBO
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.25
0.5
V
V
IC=100mA, IB=0.5mA*
IC=400mA, IB=5mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
0.9
V
IC=1A, IB=10mA*
Base-Emitter
Turn-On Voltage
0.9
V
IC=1A, VCE=2V*
Static Forward
Current Transfer
Ratio
500
400
150
IC=100mA, VCE=2V*
IC=200mA, VCE=2V*
IC=400mA, VCE=2V*
Transition Frequency
fT
130
MHz
IC=50mA, VCE=5V
f=50MHz
Input Capacitance
Output Capacitance
Switching Times
Cibo
200
9
pF
pF
VEB=0.5V, f=1MHz
VCB=10V, f=1MHz
Cobo
ton
toff
80
2900
ns
ns
IC=100mA, IB!=10mA
IB2=10mA, VCC=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 225
