SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 - OCTOBER 1995
FZT658
FEATURES
*
*
400 Volt VCEO
C
Low saturation voltage
E
C
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
FZT758
FZT658
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
400
400
5
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
V
Emitter-Base Voltage
V
Peak Pulse Current
1
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
IC
0.5
2
A
Ptot
W
Tj:Tstg
-55 to +150
°C
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
MAX.
UNIT
V
CONDITIONS.
IC=100µA
IC=10mA*
IE=100µA
VCB=320V
VEB=4V
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
400
400
5
V
V
Collector Cut-Off Current
Emitter Cut-Off Current
100
100
nA
nA
IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
0.3
0.25
0.5
V
V
V
IC=20mA, IB=1mA*
IC=50mA, IB=5mA*
IC=100mA, IB=10mA
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
0.9
V
IC=100mA, IB=10mA*
Base-Emitter
Turn-On Voltage
1.0
V
IC=100mA, VCE=5V*
Static Forward Current
Transfer Ratio
50
50
40
IC=1mA, VCE=5V*
IC=100mA, VCE=5V*
IC=200mA, VCE=10V*
Transition Frequency
fT
50
MHz
IC=10mA, VCE=20V
f=20MHz
Output Capacitance
Switching Times
Cobo
ton
10
pF
ns
ns
VCB=20V, f=1MHz
130
IC=100mA, VCC=100V
IB1=10mA, IB2=-20mA
3300
toff
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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