请登录

免费注册

首页购物车我的订单会员中心

联系客服

823711899

点击QQ咨询

400-618-9990

拨打电话咨询

购物车 0

上传BOM

产品分类

找货询价

QQ咨询

会员中心

购物车

技术支持

售后咨询

FZT1147ATC

型号：

FZT1147ATC

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

4 页

PDF大小：

97 K

下载PDF手册

PNP SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 1 - JANUARY 1997

FZT1147A

FEATURES

V_CEO= -12V

5 Amp Continuous Current

20 Amp Pulse Current

Low Saturation Voltage

High Gain

SOT223

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

-15

-12

-5

-20

Continuous Collector Current

Base Current

I_C

-5

I_B

-500

°C

Power Dissipation at T_amb=25°C

†

P_tot

2.5

Operating and Storage Temperature

Range

T_j:T_stg

-55 to +150

†The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 2 inches by 2 inches

FZT1147A

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

VALUE

PARAMETER

SYMBOL

UNIT

CONDITIONS.

I_C=-100µA

MIN.

TYP.

-35

MAX.

Collector-Base

Breakdown Voltage

V_(BR)CBO-15

Collector-Emitter

Breakdown Voltage

V_CES

V_CEO

V_CEV

-12

-5

-25

-8.5

I_C=-100µA

Collector-Emitter

Breakdown Voltage

I =-10mA *

Collector-Emitter

Breakdown Voltage

I =-100µA, V_EB=+1V

Emitter-Base Breakdown V_(BR)EBO

Voltage

I_E=-100µA

Collector Cut-Off Current I_CBO

-0.3

-100

V_CB=-12V

V_EB=-4V

Emitter Cut-Off Current

I_EBO

Collector Emitter Cut-Off I_CES

Current

=-10V

Collector-Emitter

Saturation Voltage

V_CE(sat)

-25

-50

I_C=-0.1A, I_B=-1.0mA*

I_C=-0.5A, I_B=-2.5mA*

I_C=-1A, I_B=-6mA*

I_C=-2A, I_B=-20mA*

I_C=-5A, I_B=-50mA*

-70

-110

-130

-170

-400

-90

-115

-250

Base-Emitter

V_BE(sat)

V_BE(on)

h_FE

-950

-1050

I_C=-5A, I_B=-50mA*

Saturation Voltage

Base-Emitter Turn-On

Voltage

-905

-1000

I =-5A, V_CE=-2V*

Static Forward Current

Transfer Ratio

270

250

200

150

450

400

340

245

145

I_C=-10mA, V_CE=-2V*

I_C=-0.5A, V_CE=-2V*

I_C=-2A, V_CE=-2V*

I_C=-5A, V_CE=-2V*

I_C=-10A, V_CE=-2V*

I_C=-20A, V_CE=-2V*

850

Transition Frequency

f_T

115

MHz

I_C=-50mA, V_CE=-10V

f=50MHz

Output Capacitance

Switching Times

C_cb

t_on

VCB=-10V, f=1MHz

150

I_C=-4A, I_B=-40mA,

V_CC=-10V

t_off

220

I_C=-4A, I_B=±40mA,

V_CC=-10V

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.

FZT1147A

TYPICAL CHARACTERISTICS

1.0

0.8

0.6

0.4

0.2

1.0

+25°C

IC/IB=100

0.8

IC/IB=10

0.6

0.4

0.2

-55°C

+25°C

+100°C

IC/IB=50

IC/IB=100

IC/IB=200

10m

100m

100

10m

100m

100

IC - Collector Current (A)

VCE(sat) v IC

800

600

400

200

1.8

1.5

1.2

0.9

0.6

0.3

IC/IB=100

VCE=2V

+100°C

+25°C

-55°C

+25°C

+100°C

10m

100m

100

10m

100m

IC - Collector Current (A)

hFE v IC

VBE(sat) v IC

1.5

1.0

0.5

100

VCE=2V

100ms

10ms

1ms

-55°C

+25°C

+100°C

100us

100m

IC - Collector Current¹(⁰A)

VCE - Collector Emitter Voltage (V)

10m

100m

100

100m

VBE(on) v IC

Safe Operating Area

FZT1147A

THERMAL CHARACTERISTICS

D = 1

D=t1

D=0.5

D=0.2

D=0.1

D=0.05

Single Pulse

100µs 1ms 10ms 100ms

10s

100s

80 100 120 140 160

Pulse Width

T - Ambient Temperature (°C)

Transient Thermal Resistance

Derating curve

SPICE PARAMETERS

ZETEX FZT1147A Spice model Last revision 10/12/96

.MODEL

FZT1147A PNP IS=1.272e-12 NF=0.989 ISE=2.5e-13 NE=1.65

BF=500 VAF=14.59 IKF=8 NR=1 ISC=8e-14 NC= 1.6

BR=90 VAR=3.1 IKR=1.2 RE=15e-3 RB=145e-3

RC=13e-3 CJE=560e-12

CJC=255e-12 VJC=0.6288

MJC=0.4048 TF=1.2e-9 TR=13e-9

1995 ZETEX PLC

The copyright in this model and the design embodied belong to Zetex PLC (“Zetex”). It is supplied

free of charge by Zetex for the purpose of research and design and may be used or copied intact

(including this notice) for that purpose only. All other rights are reserved. The model is believed

accurate but no condition or warranty as to its merchantability or fitness for purpose is given and

no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.

厂商	型号	描述	页数
ZETEX	FZT1047A	NPN硅平面中功率高增益晶体管[ NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ]	4 页
KEXIN	FZT1047A	NPN硅平面中功率高增益晶体管[ NPN Silicon Planar Medium Power High Gain Transistor ]	2 页
DIODES	FZT1047A	SOT223 NPN硅平面[ SOT223 NPN SILICON PLANAR ]	4 页
TYSEMI	FZT1047A	5安培连续电流20安培的脉冲电流。[ 5 Amp continuous current, 20 Amp pulse current. ]	2 页
DIODES	FZT1047ATA	[ 暂无描述 ]	4 页
ZETEX	FZT1047ATA	[ Power Bipolar Transistor, 5A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ]	4 页
DIODES	FZT1047ATC	[ Power Bipolar Transistor, 5A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ]	4 页
DIODES	FZT1048	[ 暂无描述 ]	3 页
ZETEX	FZT1048A	NPN硅平面中功率高增益晶体管[ NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ]	3 页
KEXIN	FZT1048A	NPN硅平面中功率高增益晶体管[ NPN Silicon Planar Medium Power High Gain Transistor ]	2 页