IXBH 16N170A
IXBT 16N170A
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = IC90; VCE = 10 V,
8
12.5
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
1400
90
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
31
Qg
65
13
22
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
Dim. Millimeter
Inches
td(on)
tri
td(off)
tfi
15
25
ns
ns
Min. Max. Min. Max.
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 10 W
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
160
50
250 ns
100 ns
2.5 mJ
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
,
Eoff
1.2
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
td(on)
tri
15
28
ns
ns
mJ
ns
G
H
1.65 2.13 0.065 0.084
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
-
4.5
-
0.177
J
K
1.0
1.4 0.040 0.055
Eon
td(off)
tfi
2.0
220
150
10.8 11.0 0.426 0.433
VCE = 0.8 VCES, RG = Roff = 10 W
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
ns
,
N
1.5 2.49 0.087 0.102
Eoff
2.6
mJ
TO-268AA (D3 PAK)
RthJC
RthCK
0.83 K/W
K/W
(TO-247)
0.25
ReverseDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
min. typ. max.
IF = IC90, VGE = 0 V, Pulse test,
< 300 us, duty cycle d < 2%
5.0
V
t
IRM
trr
IF = IC90, VGE = 0 V, -diF/dt = 50 A/us
vR = 100V
10
360
A
ns
Notes:
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
1. Device must be heatsunk for high
temperatureleakagecurrent
measurements to avoid thermal
runaway.
Min. Recommended Footprint
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
2. Pulse test, t £ 300 ms, duty cycle £ 2 %.
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
5.45 BSC
18.70 19.10
13.6
e
H
L
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
L2
L3
L4
1.20
1.00
0.25 BSC
1.40
1.15
.047 .055
.039 .045
.010 BSC
3.80
4.10
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
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