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7P0040600I15

型号：

7P0040600I15

描述：

EEPROM\n[ EEPROM ]

品牌：

ETC[ ETC ]

页数：

11 页

PDF大小：

114 K

下载PDF手册
PCMCIA Flash Memory Card  
FVB Series  
Value Series Flash Memory Card (AMD based) 4, 8, 16 MEGABYTE  
Features  
General Description  
The WEDC Value Series (FV) Flash memory cards  
offers a low cost linear Flash solid state storage  
solution for code and data storage, high performance  
disk emulation, mobile PC and embedded  
applications.  
• Low cost Linear Flash Card  
• Single 5 Volt Supply  
•Based on AMD Flash Components  
- very low power without entering reset mode  
- allows standard access from low power mode  
The WEDC FVB Value series is based on AMD  
Flash memories. Current cards are based on the  
AMD 29F016 (2MB) device whose manufacturer  
and device code is 01 and ADH respectively. The  
symmetrically blocked architecture and single 5V  
•Fast Read Performance  
- 150ns Maximum Access Time  
• x16 Data Interface  
- Odd byte not accessible on Even byte  
operation provides  
a
cost effective, high  
• High Performance Random Writes  
- 10µs Typical Word Write Time  
performance, nonvolatile storage solution. The PC  
Card form factor offers an industry standard pinout  
and mechanical outline, allowing density upgrades  
without system design changes.  
• Automated Write and Erase Algorithms  
- AMD Command Set  
• 50µA Typical Deep Power-Down  
• 100,000 Erase Cycles per Block  
The Value series is designed as a simple x16 linear  
array of Flash devices. Two Flash devices in parallel  
provide the lower and upper bytes for the 16 bit  
access. The Value series does not provide access of  
the ODD byte (D8 - D15) on the even byte data path  
(D0 - D7).  
• 64K word symmetrical Block Architecture  
• PC Card Standard Type I Form Factor  
WEDC’s standard Value Series Flash Card is  
shipped with no attribute memory or CIS (Card  
Information Structure) information. An option for  
2KB of attribute memory with CIS information is  
available. The CIS for the WEDC Value series may  
also be stored in Block 0 (even bytes, D0 - D7 only)  
of the Flash memory, this option is available by  
request only.  
Block Diagram  
Busy 0-7  
R/Busy  
Device 6  
Device 7  
Device 5  
Device 3  
Device 4  
Device 2  
/WR  
/RD  
ADDRESS BUS A1-A21  
CE1#  
CE2#  
REG#  
WE#  
OE#  
WEDC’s standard cards are shipped with WEDC  
Logo. Cards are also available in blank housings (no  
Logo). The blank housings are available in both a  
recessed (for label) and flat housing. Please contact  
WEDC sales representative for further information  
Custom artwork.  
CONTROL  
LOGIC  
Device 1  
Device 0  
ATTRIBUTE  
MEMORY  
28C16  
A22  
A23  
Vpp1  
Vpp2  
VS1  
open  
VS2  
DATA  
D8-15  
DATA  
D0-7  
Note: Configuration above for 16MB card using 16Mbit  
components.  
1
August 2000 Rev. 3 - ECO #13135  
PC Card Products  
PCMCIA Flash Memory Card  
FVB Series  
Pinout  
Pin Signal name I/O  
Function  
Ground  
Active  
Pin Signal name I/O  
Function  
Ground  
Active  
LOW  
1
2
3
4
5
6
7
8
GND  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
CE1#  
A10  
OE#  
A11  
A9  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
65  
66  
67  
68  
GND  
CD1#  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
CE2#  
VS1  
RFU  
RFU  
A17  
A18  
A19  
A20  
A21  
Vcc  
Vpp2  
A22  
A23  
A24  
A25  
VS2  
I/O  
I/O  
I/O  
I/O  
I/O  
I
I
I
I
I
I
I
I
Data bit 3  
Data bit 4  
Data bit 5  
Data bit 6  
Data bit 7  
Card enable 1 LOW  
Address bit 10  
Output enable LOW  
Address bit 11  
Address bit 9  
O
I/O  
I/O  
I/O  
I/O  
I
Card Detect 1  
Data bit 11  
Data bit 12  
Data bit 13  
Data bit 14  
Data bit 15  
Card Enable 2  
I
O
LOW  
9
Voltage Sense 1 N.C.  
Reserved  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
Reserved  
A8  
Address bit 8  
I
I
I
I
I
Address bit 17  
Address bit 18  
Address bit 19  
Address bit 20  
Address bit 21  
Supply Voltage  
Prog. Voltage  
Address bit 22  
Address bit 23  
Address bit 24  
Address bit 25  
A13  
A14  
WE#  
RDY/BSY  
Vcc  
Vpp1  
A16  
A15  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
DQ0  
DQ1  
DQ2  
WP  
GND  
Address bit 13  
Address bit 14  
Write Enable LOW  
Ready/Busy LOW  
Supply Voltage  
Prog. Voltage N.C.  
Address bit 16  
Address bit 15  
Address bit 12  
Address bit 7  
Address bit 6  
Address bit 5  
Address bit 4  
Address bit 3  
Address bit 2  
Address bit 1  
Address bit 0 NC  
Data bit 0  
Data bit 1  
I
4MB(2)  
O
#
N.C.  
8MB(2)  
16MB(2)  
I
I
I
I
I
I
I
I
I
I
I
I
I
O
I
N.C.  
N.C.  
Voltage Sense 2 N.C.  
Card Reset HIGH  
RST  
Wait#  
RFU  
REG#  
BVD2  
BVD1  
DQ8  
DQ9  
DQ10  
CD2#  
GND  
O Extended Bus cycle LOW  
Reserved  
I
O
O
I/O  
I/O  
O
Attrib Mem Select  
Bat. Volt. Detect 2  
Bat. Volt. Detect 1  
Data bit 8  
Data bit 9  
Data bit 10  
Card Detect 2  
Ground  
I
I
I/O  
I/O  
I/O  
O
Data bit 2  
Write Potect HIGH  
Ground  
O
LOW  
Notes:  
1. RDY/BSY is an open drain output, external pull-up resistor is required.  
2. Shows density for which specified address bit is MSB. Higher order address bits are no  
connects (i.e., 4MB A21 is MSB A22 - A25 are NC).  
Mechanical  
Interconnect area  
1.6mm ± 0.05  
(0.063”)  
10.0mm MIN  
(0.400”)  
3.0mm MIN  
1.0mm ± 0.05  
(0.039”)  
Substrate area  
54.0mm ± 0.10  
(2.126”)  
85.6mm ± 0.20  
(3.370”)  
1.0mm ± 0.05  
(0.039”)  
10.0mm MIN  
(0.400”)  
3.3mm ± T1 (0.130”)  
T1=0.10mm interconnect area  
T1=0.20mm substrate area  
2
August 2000 Rev. 3 - ECO #13135  
PC Card Products  
PCMCIA Flash Memory Card  
FVB Series  
Card Signal Description  
Symbol  
A0 - A25  
Type  
INPUT  
Name and Function  
ADDRESS INPUTS: A0 through A25 enable direct addressing of  
up to 64MB of memory on the card. Signal A0 is not decoded since  
the card is x16 only. The memory will wrap at the card density  
boundary. The system should not try to access memory beyond the  
card density. The upper addresses are not connected.  
DQ0 - DQ15  
CE1#, CE2#  
INPUT/OUTP DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the  
UT  
bi-directional databus. DQ0 - DQ7 constitute the lower (even) byte  
and DQ8 - DQ15 the upper (odd) byte. DQ15 is the MSB.  
CARD ENABLE 1 AND 2: CE1# enables even byte accesses, CE2#  
enables odd byte accesses. Odd byte (DQ8 - DQ15) can not be  
accessed on DQ0 - DQ7.  
INPUT  
OE#  
INPUT  
OUTPUT ENABLE: Active low signal enabling read data from the  
memory card.  
WE#  
INPUT  
WRITE ENABLE: Active low signal gating write data to the  
memory card.  
RDY/BSY#  
OUTPUT  
READY/BUSY OUTPUT: Indicates status of internally timed erase  
or program algorithms. A high output indicates that the card is ready  
to accept accesses. Open Drain output, pull-up resistor is required.  
CARD DETECT 1 and 2: Provide card insertion detection. These  
signals are connected to ground internally on the memory card. The  
host socket interface circuitry shall supply 10K-ohm or larger pull-up  
resistors on these signal pins.  
CD1#, CD2#  
OUTPUT  
WP  
OUTPUT  
N.C.  
WRITE PROTECT: This signal is pulled low internally. This  
signifies write protect = "off " for all cases.  
PROGRAM/ERASE POWER SUPPLY: Not connected for 5V  
only card.  
VPP1, VPP2  
VCC  
GND  
REG#  
CARD POWER SUPPLY: 5.0V for all internal circuitry.  
GROUND: for all internal circuitry.  
ATTRIBUTE MEMORY SELECT : only used with cards built  
with optional attribute memory.  
RESET: Active high signal for placing card in Power-on default  
state. Reset can be used as a Power-Down signal for the memory  
array.  
INPUT  
INPUT  
RST  
WAIT#  
OUTPUT  
OUTPUT  
OUTPUT  
WAIT: This signal is pulled high internally for compatibility. No  
wait states are generated.  
BATTERY VOLTAGE DETECT: These signals are pulled high to  
maintain SRAM card compatibility.  
VOLTAGE SENSE: Notifies the host socket of the card's VCC  
requirements. VS1 and VS2 are open to indicate a 5V, 16 bit card  
has been inserted.  
BVD1, BVD2  
VS1, VS2  
RFU  
N.C.  
RESERVED FOR FUTURE USE  
NO INTERNAL CONNECTION TO CARD: pin may be driven  
or left floating  
Functional Truth Table  
READ function  
Common Memory  
Attribute Memory  
Function Mode  
/CE2 /CE1 /OE /WE  
/REG D15-D8  
D7-D0  
High-Z  
/REG D15-D8  
D7-D0  
High-Z  
H
H
L
L
H
L
L
H
X
L
L
L
X
H
H
H
X
H
H
H
X
L
L
L
Standby Mode  
High-Z  
High-Z Even-Byte  
Odd-Byte Even-Byte  
High-Z  
High-Z Even-Byte  
Not Valid Even-Byte  
Low Byte Access  
Word Access (16 bits)  
Odd-Byte Only Access  
WRITE function  
Odd-Byte  
High-Z  
Not Valid  
High-Z  
Standby Mode  
Low Byte Access  
Word Access (16 bits)  
Odd-Byte Only Access  
H
H
L
L
H
L
L
H
X
H
H
H
X
L
L
L
X
H
H
H
X
X
X
X
L
L
L
X
X
X
X
X
Even-Byte  
Even-Byte  
Even-Byte  
X
Odd-Byte Even-Byte  
Odd-Byte  
X
3
August 2000 Rev. 3 - ECO #13135  
PC Card Products  
PCMCIA Flash Memory Card  
FVB Series  
Absolute Maximum Ratings (1)  
Note:  
(1) Stress greater than those listed under “Absolute  
Maximum ratings” may cause permanent damage to  
the device. This is a stress rating only and functional  
operation at these or any other conditions greater  
than those indicated in the operational sections of  
this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods  
may affect reliability.  
Operating Temperature TA (ambient)  
Commercial  
Industrial  
Storage Temperature  
Voltage on any pin relative to VSS  
VCC supply Voltage relative to VSS  
0°C to +60 °C  
-40°C to +85 °C  
-40°C to +85 °C  
-0.5V to VCC+0.5V  
-0.5V to +7.0V  
DC Characteristics (1)  
Symbol Parameter  
Density Notes Typ(3) Max Units Test Conditions  
(Mbytes)  
VCC Read Current  
4,8,16  
40  
mA VCC = 5.25V  
tcycle = 150ns  
mA  
I
CCR  
VCC Program Current  
VCC Erase Current  
4,8,16  
4,8,16  
4,8,16  
65  
65  
I
I
I
CCW  
CCE  
CCS  
mA  
VCC Standby Current  
For max capacity 16MB  
2
10  
100  
µA  
VCC = 5.25V  
Control Signals = VCC  
CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = VCC ± 0.2V  
Notes:  
1. All currents are for Byte mode and are RMS values unless otherwise specified.  
2. Control Signals: CE1#, CE2#, OE#, WE#, REG#.  
3. Typical: VCC = 5V, T = +25C.  
Symbol  
Parameter  
Notes  
Min  
Max  
Units  
Test Conditions  
ILI  
Input Leakage Current  
1,2  
±20  
µA  
VCC = VCCMAX  
Vin =VCC or VSS  
VCC = VCCMAX  
Vout =VCC or VSS  
ILO  
Output Leakage Current  
1
±20  
µA  
VIL  
VIH  
Input Low Voltage  
Input High Voltage  
1
1
0
0.8  
V
V
3.85  
VCC+0.  
5
VOL  
Output Low Voltage  
Output High Voltage  
1
1
1
0.4  
V
V
V
IOL = 3.2mA  
IOH = -2.0mA  
VOH  
VLKO  
VCC-0.4  
3.2  
VCC  
4.2  
VCC Erase/Program  
Lock Voltage  
Notes:  
1. Values are the same for byte and word wide modes for all card densities.  
2. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 µA when VIN = GND  
due to internal pull-up resistors. Leakage currents on RST will be <150µA when VIN=VCC due to  
internal pull-down resistor.  
4
August 2000 Rev. 3 - ECO #13135  
PC Card Products  
PCMCIA Flash Memory Card  
FVB Series  
AC Characteristics  
Read Timing Parameters  
150ns  
Min  
SYMBOL  
(PCMCIA)  
tC(R)  
Parameter  
Max  
Unit  
Read Cycle Time  
150  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ta(A)  
Address Access Time  
Card Enable Access Time  
Output Enable Access Time  
Address Setup Time  
150  
150  
75  
20  
0
ta(CE)  
ta(OE)  
tsu(A)  
tsu(CE)  
th(A)  
Card Enable Setup Time  
Address Hold Time  
20  
20  
0
th(CE)  
tv(A)  
Card Enable Hold Time  
Output Hold from Address  
Change  
tdis(CE)  
tdis(OE)  
ten(CE)  
ten(OE)  
Output Disable Time from CE#  
75  
75  
ns  
ns  
ns  
ns  
ns  
Output Disable Time from OE#  
Output Enable Time from CE#  
Output Enable Time from OE#  
5
5
(2)  
Power Down recovery to Output  
Delay. VCC = 5V  
500  
trec(RST)  
Notes:  
1. AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.  
2. Minimum width of reset pulse 500ns.  
Read Timing Diagram  
tc(R)  
th(A)  
ta(A)  
A[25::0], /REG  
/CE1, /CE2  
tv(A)  
ta(CE)  
tsu(CE)  
NOTE 1  
NOTE 1  
th(CE)  
ta(OE)  
tsu(A)  
tdis(CE)  
/OE  
tdis(OE)  
ten(OE)  
D[15::0]  
DATA VALID  
Note: Signal may be high or low in this area  
5
August 2000 Rev. 3 - ECO #13135  
PC Card Products  
PCMCIA Flash Memory Card  
FVB Series  
Write Timing Parameters  
150ns  
Min  
SYM  
Parameter  
Max  
Unit  
(PCMCIA)  
tCW  
Write Cycle Time  
150  
80  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tw(WE)  
Write Pulse Width  
tsu(A)  
Address Setup Time  
20  
tsu(A-WEH)  
tsu(CE-WEH)  
tsu(D-WEH)  
th(D)  
Address Setup Time for WE#  
Card Enable Setup Time for WE#  
Data Setup Time for WE#  
Data Hold Time  
100  
100  
50  
20  
trec(WE)  
tdis(WE)  
tdis(OE)  
Write Recover Time  
20  
Output Disable Time from WE#  
Output Disable Time from OE#  
Output Enable Time from WE#  
Output Enable Time from OE#  
Output Enable Setup from WE#  
Output Enable Hold from WE#  
Card Enable Setup Time from OE#  
Card Enable Hold Time  
75  
75  
ten(WE)  
5
5
ten(OE)  
tsu(OE-WE)  
th(OE-WE)  
tsu(CE)  
10  
10  
0
th(CE)  
20  
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.  
Write Timing Diagram  
tc(W )  
A [2 5 ::0 ], /R E G  
ts u (A -W E H )  
tre c (W E )  
th (C E )  
ts u (C E -W E H )  
tsu (C E )  
/C E 1 , /C E 2  
N O T E  
1
N O T E  
1
/O E  
th (O E -W E )  
th (D )  
tw (W E )  
ts u (A )  
/W E  
tsu (O E -W E )  
ts u (D -W E H )  
D [1 5 ::0 ](D in )  
N O T E  
2
D A T A IN P U T  
td is (W E )  
td is(O E )  
te n (O E )  
te n (W E )  
N O T E  
2
D [1 5 ::0 ](D o u t)  
Notes:  
1. Signal may be high or low in this area.  
2. When the data I/O pins are in the output state, no signals shall be applied to the data pins (D15 - D0) by  
the host system.  
6
August 2000 Rev. 3 - ECO #13135  
PC Card Products  
PCMCIA Flash Memory Card  
FVB Series  
Data Write and Erase Performance (1,3)  
VCC = 5V ± 5%, TA = 0C to + 70C  
Parameter  
Word/Byte Program time 2,4  
Notes Min Typ(1)  
Max Units Comments  
7µs  
1
1ms  
15  
Note 2, 4  
Block Erase Time  
2
sec  
Excludes 00H prog. prior to erasure  
Notes:  
1. Typical: Nominal voltages and TA = 25C.  
2. Excludes system overhead.  
3. Valid for all speed options.  
4. To maximize system performance RDY/BSY# signal or component status register should be polled.  
7
August 2000 Rev. 3 - ECO #13135  
PC Card Products  
PCMCIA Flash Memory Card  
FVB Series  
PRODUCT MARKING  
WED7P016FVB0600C15 C995 9915  
EDI  
Date code  
Lot code / trace number  
Part number  
Company Name  
Note:  
Some products are currently marked with our pre-merger company name/acronym (EDI). During our  
transition period, some products will also be marked with our new company name/acronym (WED).  
Starting October 2000 all PCMCIA products will be marked only with the WED prefix.  
PART NUMBERING  
7P016FVB0600C15  
Card access time  
15  
25  
150ns  
250ns  
Temperature range  
C
I
Commercial 0°C to +70°C  
Industrial -40°C to +85°C  
Packaging option  
00  
Standard, type 1  
Card family and version  
- See Card Family and Version Info. for details (next page)  
Card capacity  
016 16MB  
PC card  
P
Standard PCMCIA  
R
Ruggedized PCMCIA  
Card technology  
7
8
FLASH  
SRAM  
8
August 2000 Rev. 3 - ECO #13135  
PC Card Products  
PCMCIA Flash Memory Card  
FVB Series  
Ordering Information  
7P XXX FVB YY SS T ZZ  
where  
XXX:  
004  
008  
016  
4MB  
8MB  
16MB  
YY:  
SS:  
05  
06  
29F016 base  
29F016 w/attribute memory  
00  
01  
02  
WEDC Silkscreen  
Blank Housing, Type I  
Blank Housing, Type I Recessed  
T:  
C
I
Commercial  
Industrial  
ZZ:  
15  
150ns  
Part Number Table - Common Options  
EDI Part Number  
Density  
Speed  
Flash Component Attribute Memory  
AMD Based Cards  
EDI7P004FVB0500C15  
EDI7P004FVB0600C15  
EDI7P008FVB0500C15  
EDI7P008FVB0600C15  
EDI7P016FVB0500C15  
EDI7P016FVB0600C15  
4MB  
150ns  
29F016  
29F016  
29F016  
29F016  
29F016  
29F016  
NO  
2K EEPROM  
NO  
2K EEPROM  
NO  
2K EEPROM  
4MB  
8MB  
8MB  
16MB  
16MB  
150ns  
150ns  
150ns  
150ns  
150ns  
9
August 2000 Rev. 3 - ECO #13135  
PC Card Products  
PCMCIA Flash Memory Card  
FVB Series  
CIS Data - Cards Based on 29F016 Components with Attribute Memory  
Address  
00H  
Value  
01H  
03H  
53H  
0EH  
1EH  
3EH  
FFH  
18H  
02H  
01H  
ADH  
17H  
04H  
42H  
01H  
FFH  
1EH  
06H  
02H  
11H  
01H  
01H  
01H  
01H  
Description  
CISTPL_DEVICE  
TPL_LINK  
Address  
64H  
66H  
68H  
6AH  
6CH  
6EH  
70H  
72H  
74H  
76H  
78H  
7AH  
7CH  
7EH  
80H  
82H  
84H  
86H  
88H  
8AH  
8CH  
8EH  
90H  
92H  
94H  
96H  
98H  
9AH  
9CH  
9EH  
A0H  
A2H  
A4H  
A6H  
A8H  
AAH  
ACH  
AEH  
B0H  
B2H  
B4H  
B6H  
B8H  
BAH  
BCH  
BEH  
C0H  
C2H  
C4H  
C6H  
C8H  
CAH  
CCH  
Value  
20H  
00H  
43H  
4FH  
50H  
59H  
52H  
49H  
47H  
48H  
54H  
20H  
45H  
4CH  
45E  
43H  
54H  
52H  
4FH  
4EH  
49H  
43H  
20H  
44H  
45H  
53H  
49H  
47H  
4EH  
53H  
20H  
49H  
4EH  
43H  
4FH  
52H  
50H  
4FH  
52H  
41H  
54H  
45H  
44H  
20H  
00H  
31H  
39H  
39H  
37H  
00H  
FFH  
FFH  
00H  
Description  
SPACE  
02H  
END TEXT  
04H  
FLASH = 150ns (device writable)  
CARD SIZE: 4MB  
8MB  
C
06H  
O
P
16MB  
Y
08H  
0AH  
0CH  
0EH  
10H  
12H  
14H  
16H  
18H  
1AH  
1CH  
1EH  
20H  
22H  
24H  
26H  
28H  
2AH  
END OF TUPLE  
CISTPL_JEDEC_C  
TPL_LINK  
R
I
G
AMD - ID  
H
29F016 - ID  
T
CISTPL_DEVICE_A  
TPL_LINK  
SPACE  
E
EEPROM - 250ns  
Device Size = 2KBytes  
END OF TUPLE  
CISTPL_DEVICEGEO  
TPL_LINK  
L
E
C
T
R
DGTPL_BUS  
O
DGTPL_EBS  
N
DGTPL_RBS  
I
DGTPL_WBS  
C
DGTPL_PART  
FLASH DEVICE  
NON-INTERLEAVED  
CISTPL_MANFID  
TPL_LINK  
SPACE  
D
E
2CH  
2EH  
30H  
32H  
34H  
36H  
38H  
3AH  
3CH  
3EH  
40H  
42H  
44H  
46H  
48H  
4AH  
4CH  
4EH  
50H  
52H  
54H  
56H  
58H  
5AH  
5CH  
5EH  
60H  
62H  
20H  
04H  
F6H  
01H  
00H  
00H  
15H  
47H  
05H  
00H  
45H  
44H  
49H  
37H  
50H  
30H  
30H  
S
I
TPLMID_MANF: LSB  
TPLMID_MANF: MSB  
EDI  
EDI  
G
N
LSB: Number Not Assigned  
S
MSB: Number Not Assigned  
SPACE  
CISTPL_VERS1  
I
TPL_LINK  
N
TPLLV1_MAJOR  
C
TPLLV1_MINOR  
O
E
D
I
R
P
O
7
P
0
0
x
F
V
B
0
6
-
R
A
T
E
D
46H  
56H  
42H  
30H  
36H  
2DH  
2DH  
2DH  
SPACE  
END TEXT  
1
9
9
7
-
END TEXT  
END OF TUPLE  
CISTPL_END  
INVALID ADDRESS  
-
y
y
Note: In the part number, value x will be substituted with the proper capacity and value yy with the proper card speed.  
10  
August 2000 Rev. 3 - ECO #13135  
PC Card Products  
PCMCIA Flash Memory Card  
FVB Series  
Revision History  
revision  
rev date  
description  
0
1
2
3
Jan-98 initial release  
Jun-99 logo/name change  
May-00 added page 8  
Aug-00 Changed pg. 5&6  
White Electronic Designs Corporation  
One Research Drive, Westborough, MA 01581, USA  
tel: (508) 366 5151  
fax: (508) 836 4850  
www.whiteedc.com  
11  
August 2000 Rev. 3 - ECO #13135  
PC Card Products  
厂商 型号 描述 页数 下载

WEDC

 		7P001FEA0200C15 [ Flash Card, 1MX8, 150ns, CARD-68 ] 6 页

WEDC

 		7P001FEA0300C15 [ Flash Card, 1MX8, 150ns, CARD-68 ] 6 页

WEDC

 		7P001FLG0100C15 [ Flash Card, 512MX16, 150ns, CARD-68 ] 11 页

ETC

 		7P001FLG0100C20 周边其他\n[ Peripheral Miscellaneous ] 13 页

WEDC

 		7P001FLG0100I15 [ Flash Card, 512MX16, 150ns, CARD-68 ] 11 页

WEDC

 		7P001FLG0100I20 [ Flash Card, 512MX16, 200ns, CARD-68 ] 11 页

WEDC

 		7P001FLG0101C15 [ Flash Card, 512MX16, 150ns, CARD-68 ] 11 页

WEDC

 		7P001FLG0101C20 [ Flash Card, 512MX16, 200ns, CARD-68 ] 11 页

WEDC

 		7P001FLG0101I15 [ Flash Card, 512MX16, 150ns, CARD-68 ] 11 页

ETC

 		7P001FLG0101I20 周边其他\n[ Peripheral Miscellaneous ] 13 页

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