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7P004FLB2602C15

型号：

7P004FLB2602C15

描述：

EEPROM\n[ EEPROM ]

品牌：

ETC[ ETC ]

页数：

12 页

PDF大小：

120 K

下载PDF手册
PCMCIA Flash Memory Card  
FLB Series  
PCMCIA Flash Memory Card  
General Description  
2 MEGABYTE through 40 MEGABYTE (AMD based)  
Features  
WEDC’s PCMCIA Flash memory cards offer high  
density linear Flash solid state storage solutions for  
code and data storage, high performance disk  
emulation and execute in place (XIP) applications in  
mobile PC and dedicated (embedded) equipment.  
• Low cost High Density Linear Flash Card  
• Supports 5V only systems  
•Based on AMD Flash Components  
-low standby power without entering reset mode  
-allows standard access from standby mode  
Packaged in PCMCIA type I housing, each card  
contains a connector, an array of Flash memories  
packaged in TSOP packages and card control logic.  
The card control logic provides the system interface  
and controls the internal Flash memories. Combined  
with file management software, such as Flash  
Translation Layer (FTL), WEDC Flash cards provide  
removable high-performance disk emulation.  
•Fast Read Performance  
- 150ns Maximum Access Time  
• x8/ x16 Data Interface  
• High Performance Random Writes  
- 10µs Typical Word Write Time  
• Automated Write and Erase Algorithms  
- AMD Command Set  
The WEDC FLA series is based on AMD Flash  
memories. The FLB series offers byte wide and word  
wide operation, low power modes and Card  
Information Structure (CIS) for easy identification of  
card characteristics.  
• 100,000 Erase Cycles per Block  
• 64K word symmetrical Block Architecture  
• PC Card Standard Type I Form Factor  
Note:  
Standard options include attribute memory. Cards  
without attribute memory are available. Cards are also  
available with or without a hardware write protect  
switch.  
Architecture Overview  
WEDC’s FLB series is designed to support from two to twenty (see Block diagram) 8Mb or 16MB components,  
providing a wide range of density options. Cards are based on the Am29F080 (8Mb) or Am29F016 (16Mb) devices  
for 5V only applications. Devices codes for the Am29F080 and Am29F016 are D5H and ADH respectively.  
Systems should be able to recognize both codes. Cards utilizing the 8Mb components provide densities ranging  
from 2MB to 20MB in 2MB increments, cards utilizing 16Mb components provide densities ranging from 4MB to  
40MB in 4MB increments.  
In support of the PC Card 95 standard for word wide access devices are paired. Therefore, the Flash array is  
structured in 64K word blocks. Write, read and block erase operations can be performed as either a word or byte  
wide operation . By multiplexing A0, CE1# and CE2#, 8-bit hosts can access all data on data lines DQ0 - DQ7. The  
FLB series cards conform with the PC Card Standard (formerly PCMCIA) and supported JEIDA, providing  
electrical and physical compatibility. The PC Card form factor offers an industry standard pinout and mechanical  
outline, allowing density upgrades without system design changes.  
WEDC’s standard cards are shipped with WEDC’s silkscreen design. Cards are also available with blank housings  
(no silkscreen). The blank housings are available in both a recessed (for label) and flat housing. Please contact  
WEDC sales representative for further information on Custom artwork.  
1
August 2000 Rev. 3 - ECO #13126  
PC Card Products  
PCMCIA Flash Memory Card  
FLB Series  
Block Diagram  
Manuf ID Device ID  
Device type  
Am28F080  
Am28F016  
01  
01  
D5  
AD  
H
H
H
H
CSn  
Device Pair (N/2 - 1)  
Device (N-1)  
Device (N-2)  
Array  
Address  
Bus  
ADDRESS  
BUFFER  
ADDRESS BUS  
A1-A25  
Control  
Address  
Bus  
M Res  
WE#  
OE#  
WL#  
RL#  
WH#  
RH#  
CSn  
Control Logic  
PCMCIA Interface  
CE2#  
CE1#  
Qn  
Device Pair 1  
Device 3  
REG#  
A0  
WP  
Q2  
Q0  
Ctrl  
Device 2  
Device 0  
CS1  
CS0  
At/Reg enable  
CS0  
Device Pair 0  
Device 1  
Vcc  
RH#  
WL# RL#  
WH#  
DATA  
BUS  
Q8-Q15  
DATA  
BUS  
Q0-Q7  
Vcc  
0000h  
attrib. mem  
CIS  
EEPROM 2kB  
control  
Q0-Q7  
Vcc  
I/O buffer  
DATA  
BUS  
D0-D7  
DATA  
BUS  
D8-D15  
2
August 2000 Rev. 3 - ECO #13126  
PC Card Products  
PCMCIA Flash Memory Card  
FLB Series  
Pinout  
Pin Signal name I/O  
Function  
Ground  
Active  
Pin Signal name I/O  
Function  
Ground  
Card Detect 1  
Data bit 11  
Data bit 12  
Data bit 13  
Data bit 14  
Data bit 15  
Active  
LOW  
1
2
3
4
5
6
7
8
GND  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
CE1#  
A10  
OE#  
A11  
A9  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
65  
66  
67  
68  
GND  
CD1#  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
CE2#  
VS1  
RFU  
RFU  
A17  
A18  
A19  
A20  
A21  
Vcc  
Vpp2  
A22  
A23  
A24  
A25  
I/O  
I/O  
I/O  
I/O  
I/O  
I
I
I
I
I
I
Data bit 3  
Data bit 4  
Data bit 5  
Data bit 6  
Data bit 7  
O
I/O  
I/O  
I/O  
I/O  
I
Card enable 1 LOW  
Address bit 10  
Output enable LOW  
Address bit 11  
Address bit 9  
I
O
Card Enable 2  
Voltage Sense 1  
Reserved  
LOW  
N.C.  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
Reserved  
A8  
Address bit 8  
I
I
I
I
I
Address bit 17  
Address bit 18  
Address bit 19  
Address bit 20  
Address bit 21  
Supply Voltage  
Prog. Voltage  
Address bit 22  
Address bit 23  
Address bit 24  
Address bit 25  
Voltage Sense 2  
Card Reset  
Extended Bus cycle LOW(2)  
Reserved  
Attrib Mem Select  
Bat. Volt. Detect 2  
Bat. Volt. Detect 1  
Data bit 8  
A13  
A14  
WE#  
RDY/BSY#  
Vcc  
Vpp1  
A16  
A15  
A12  
A7  
I
I
I
O
Address bit 13  
Address bit 14  
Write Enable LOW  
Ready/Busy LOW  
Supply Voltage  
Prog. Voltage N.C.  
Address bit 16  
Address bit 15  
Address bit 12  
Address bit 7  
Address bit 6  
Address bit 5  
Address bit 4  
Address bit 3  
Address bit 2  
A d dres s bit 1  
A d dres s bit 0  
Data bit 0  
2MB(3)  
4MB(3)  
N.C.  
8MB(3)  
16MB(3)  
32MB(3)  
64MB(3)  
N.C.  
I
I
I
I
I
I
I
I
I
I
I
I
I
O
I
A6  
A5  
A4  
A3  
A2  
A 1  
A 0  
DQ0  
DQ1  
DQ2  
WP  
VS2  
RST  
HIGH  
Wait#  
RFU  
REG#  
BVD2  
BVD1  
DQ8  
DQ9  
DQ10  
CD2#  
GND  
O
I
O
O
I/O  
I/O  
O
I
I
(2)  
(2)  
I/O  
I/O  
I/O  
O
Data bit 1  
Data bit 2  
Write Potect HIGH  
Ground  
Data bit 9  
Data bit 10  
Card Detect 2  
Ground  
O
LOW  
GND  
Notes:  
1. RDY/BSY is an open drain output, external pull-up resistor is required.  
2. Wait#, BVD1 and BVD2 are driven high for compatibility.  
3. Shows density for which specified address bit is MSB.  
Higher order address bits are no connects (ie 4MB A21 is MSB A22 - A25 are NC).  
Mechanical  
.063  
3.370  
.039  
2.126  
.039  
.400  
.130  
MAX.  
3
August 2000 Rev. 3 - ECO #13126  
PC Card Products  
PCMCIA Flash Memory Card  
FLB Series  
Card Signal Description  
Symbol  
A0 - A25  
Type  
INPUT  
Name and Function  
ADDRESS INPUTS: A0 through A25 enable direct addressing of  
up to 64MB of memory on the card. Signal A0 is not used in word  
access mode. A25 is the most significant bit  
DQ0 - DQ15  
CE1#, CE2#  
INPUT/OUTPUT DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the  
bi-directional databus. DQ15 is the MSB.  
INPUT  
CARD ENABLE 1 AND 2: CE1# enables even byte accesses, CE2#  
enables odd byte accesses. Multiplexing A0, CE1# and CE2# allows  
8-bit hosts to access all data on DQ0 - DQ7.  
OE#  
INPUT  
OUTPUT ENABLE: Active low signal gating read data from the  
memory card.  
WE#  
INPUT  
WRITE ENABLE: Active low signal gating write data to the  
memory card.  
RDY/BSY#  
OUTPUT  
READY/BUSY OUTPUT: Indicates status of internally timed erase  
or program algorithms. A high output indicates that the card is ready  
to accept accesses. A low output indicates that one or more devices  
in the memory card are busy with internally timed erase or write  
activities.  
CD1#, CD2#  
WP  
OUTPUT  
OUTPUT  
CARD DETECT 1 and 2: Provide card insertion detection. These  
signals are connected to ground internally on the memory card. The  
host socket interface circuitry shall supply 10K-ohm or larger pull-up  
resistors on these signal pins.  
WRITE PROTECT: Write protect reflects the status of the Write  
Protect switch on the memory card. WP set to high = write protected,  
providing internal hardware write lockout to the Flash array.  
If card does not include optional write protect switch, this signal will  
be pulled low internally indicating write protect = "off".  
PROGRAM/ERASE POWER SUPPLY: Not connected for 5V  
only card.  
VPP1, VPP2  
N.C.  
VCC  
GND  
REG#  
CARD POWER SUPPLY: 5.0V for all internal circuitry.  
GROUND: for all internal circuitry.  
ATTRIBUTE MEMORY SELECT : provides access to Flash  
memory card registers and Card Information Structure in the  
Attribute Memory Plane.  
INPUT  
RST  
INPUT  
RESET: Active high signal for placing card in Power-on default  
state. Reset can be used as a Power-Down signal for the memory  
array.  
WAIT#  
OUTPUT  
WAIT: This signal is pulled high internally for compatibility. No  
wait states are generated.  
BVD1, BVD2 OUTPUT  
BATTERY VOLTAGE DETECT: These signals are pulled high to  
maintain SRAM card compatibility.  
VS1, VS2  
OUTPUT  
VOLTAGE SENSE: Notifies the host socket of the card's VCC  
requirements. VS1 and VS2 are open to indicate a 5V card has been  
inserted.  
RFU  
N.C.  
RESERVED FOR FUTURE USE  
NO INTERNAL CONNECTION TO CARD: pin may be driven  
or left floating  
4
August 2000 Rev. 3 - ECO #13126  
PC Card Products  
PCMCIA Flash Memory Card  
FLB Series  
Absolute Maximum Ratings (1)  
Notes:  
(1) During transitions, inputs may undershoot  
to -2.0V or overshoot to VCC +2.0V for periods  
less than 20ns.  
Operating Temperature TA (ambient)  
Commercial  
Industrial  
0°C to +60 °C  
-40°C to +85 °C **  
(2) Stress greater than those listed under  
“Absolute Maximum ratings” may cause  
permanent damage to the device. This is a  
stress rating only and functional operation at  
these or any other conditions greater than  
those indicated in the operational sections of  
this specification is not implied. Exposure to  
absolute maximum rating conditions for  
extended periods may affect reliability.  
Storage Temperature  
Commercial  
Industrial  
-30°C to +80 °C  
-40°C to +85 °C **  
-0.5V to VCC+0.5V (1)  
-0.5V to +7.0V  
Voltage on any pin relative to VSS  
VCC supply Voltage relative to VSS  
** Advanced information.  
DC Characteristics (1)  
Sym  
ICCR  
Parameter  
Density Notes Typ(4) Max  
(Mbytes)  
Units Test Conditions  
VCC Read Current  
All  
75  
mA VCC = VCCmax  
tcycle = 150ns,CMOS levels  
mA  
ICCW  
ICCE  
VCC Program Current  
VCC Erase Current  
All  
All  
150  
150  
230  
mA  
ICCS  
VCC Standby Current  
2MB  
2,3  
80  
µA  
VCC = VCCmax  
(CMOS)  
(4MB)  
Control Signals = VCC  
Reset = VSS, CMOS levels  
CMOS Test Conditions: VCC = 5V ± 5%, VIL = VSS ± 0.2V, VIH = VCC ± 0.2V  
Notes:  
1. All currents are RMS values unless otherwise specified. ICCR, ICCW and ICCE are based on Word wide operations.  
2. Control Signals: CE1#, CE2#, OE#, WE#, REG#.  
3. ICCD and ICCS are specified for lowest density card for each component type (2MB for 8Mb components and  
4MB for 16Mb components) This represents a single pair of devices. For higher densities multiply the number of device  
pairs by the specified current in the table. For example a 40MB card will use 10 device pairs of 16Mb components.  
The maximum ICCD will be 10 x 40µA = 400µA. The maximum ICCS will be 10 x 230µA = 2.3mA.  
4. Typical: VCC = 5V, T = +25°C.  
Symbol  
Parameter  
Notes  
Min  
Max  
Units  
Test Conditions  
ILI  
Input Leakage Current  
1
±20  
µA  
VCC = VCCMAX  
Vin =VCC or VSS  
ILO  
Output Leakage Current  
1
±20  
µA  
VCC = VCCMAX  
Vout =VCC or VSS  
VIL  
Input Low Voltage  
Input High Voltage  
Output Low Voltage  
Output High Voltage  
1
1
1
1
1
0
0.8  
VCC+0.5  
0.4  
V
V
V
V
V
VIH  
0.7VCC  
VOL  
VOH  
VLKO  
IOL = 3.2mA  
IOH = -2.0mA  
VCC-0.4  
2.0  
VCC  
VCC Erase/Program  
Lock Voltage  
Notes:  
1. Values are the same for byte and word wide modes for all card densities.  
2. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 µA when VIN = GND due to  
internal pull-up resistors. Leakage currents on RST will be <150µA when VIN=VCC due to internal pull-down resistor.  
5
August 2000 Rev. 3 - ECO #13126  
PC Card Products  
PCMCIA Flash Memory Card  
FLB Series  
AC Characteristics  
Read Timing Parameters  
150ns  
Min  
SYM  
Parameter  
Max  
Unit  
(PCMCIA)  
tC(R)  
Read Cycle Time  
150  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ta(A)  
Address Access Time  
150  
150  
75  
20  
0
ta(CE)  
ta(OE)  
tsu(A)  
Card Enable Access Time  
Output Enable Access Time  
Address Setup Time  
tsu(CE)  
th(A)  
Card Enable Setup Time  
Address Hold Time  
20  
20  
0
th(CE)  
tv(A)  
Card Enable Hold Time  
Output Hold from Address Change  
Output Disable Time from CE#  
Output Disable Time from OE#  
Output Enable Time from CE#  
Output Enable Time from OE#  
tdis(CE)  
tdis(OE)  
ten(CE)  
ten(OE)  
75  
75  
5
5
Note: AC timing diagrams and characteristics are guaranteed  
to meet or exceed PCMCIA 2.1 specifications.  
Read Timing Diagram  
tc(R)  
th(A)  
ta(A)  
A[25::0], /REG  
/CE1, /CE2  
tv(A)  
ta(CE)  
tsu(CE)  
NOTE 1  
NOTE 1  
th(CE)  
ta(OE)  
tsu(A)  
tdis(CE)  
/OE  
tdis(OE)  
ten(OE)  
D[15::0]  
DATA VALID  
Note: Signal may be high or low in this area.  
6
August 2000 Rev. 3 - ECO #13126  
PC Card Products  
PCMCIA Flash Memory Card  
FLB Series  
Write Timing Parameters  
150ns  
Min  
SYM  
Parameter  
Max  
Unit  
(PCMCIA)  
tCW  
Write Cycle Time  
150  
80  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tw(WE)  
Write Pulse Width  
tsu(A)  
Address Setup Time  
20  
tsu(A-WEH)  
tsu(CE-WEH)  
tsu(D-WEH)  
th(D)  
Address Setup Time for WE#  
Card Enable Setup Time for WE#  
Data Setup Time for WE#  
Data Hold Time  
100  
100  
50  
20  
trec(WE)  
tdis(WE)  
tdis(OE)  
Write Recover Time  
20  
Output Disable Time from WE#  
Output Disable Time from OE#  
Output Enable Time from WE#  
Output Enable Time from OE#  
Output Enable Setup from WE#  
Output Enable Hold from WE#  
Card Enable Setup Time from OE#  
Card Enable Hold Time  
75  
75  
ten(WE)  
5
5
ten(OE)  
tsu(OE-WE)  
th(OE-WE)  
tsu(CE)  
10  
10  
0
th(CE)  
20  
Note: AC timing diagrams and characteristics are guaranteed to  
meet or exceed PCMCIA 2.1 specifications.  
Write Timing Diagram  
tc(W )  
A [2 5 ::0 ], /R E G  
ts u (A -W E H )  
tre c (W E )  
th (C E )  
ts u (C E -W E H )  
tsu (C E )  
/C E 1 , /C E 2  
N O T E  
1
N O T E  
1
/O E  
th (O E -W E )  
th (D )  
tw (W E )  
ts u (A )  
/W E  
tsu (O E -W E )  
ts u (D -W E H )  
D [1 5 ::0 ](D in )  
N O T E  
2
D A T A IN P U T  
td is (W E )  
td is(O E )  
te n (O E )  
te n (W E )  
N O T E  
2
D [1 5 ::0 ](D o u t)  
Notes:  
1. Signal may be high or low in this area  
2. When the data I/O pins are in the output state, no signals shall be applied  
to the data pins (D15 - D0) by the host system.  
7
August 2000 Rev. 3 - ECO #13126  
PC Card Products  
PCMCIA Flash Memory Card  
FLB Series  
Data Write and Erase Performance (1,3)  
VCC = 5V ± 5%, TA = 0°C to + 60°C  
SYM Parameter  
Notes Min Typ(1)  
Max Units  
3ms  
Test Conditions  
tWHQV1 Word/Byte Program time 2,4  
tEHQV1  
tWHQV2 Block Program Time  
tEHQV2  
8µs  
0.5  
1.1  
2
2.1  
10  
sec  
sec  
Word Program Mode  
Block Erase Time  
2
Notes:  
1. Typical: Nominal voltages and TA = 25°C.  
2. Excludes system overhead.  
3. Valid for all speed options.  
4. To maximize system performance RDY/BSY# signal should be polled.  
8
August 2000 Rev. 3 - ECO #13126  
PC Card Products  
PCMCIA Flash Memory Card  
FLB Series  
PRODUCT MARKING  
WED7P016FLB2600C15 C995 9915  
EDI  
Date code  
Lot code / trace number  
Part number  
Company Name  
Note:  
Some products are currently marked with our pre-merger company name/acronym (EDI). During our  
transition period, some products will also be marked with our new company name/acronym (WED).  
Starting October 2000 all PCMCIA products will be marked only with the WED prefix.  
PART NUMBERING  
7P016FLB2600C15  
Card access time  
15  
25  
150ns  
250ns  
Temperature range  
C
I
Commercial 0°C to +70°C  
Industrial -40°C to +85°C  
Packaging option  
00  
Standard, type 1  
Card family and version  
- See Card Family and Version Info. for details (next page)  
Card capacity  
016 16MB  
PC card  
P
Standard PCMCIA  
R
Ruggedized PCMCIA  
Card technology  
7
8
FLASH  
SRAM  
9
August 2000 Rev. 3 - ECO #13126  
PC Card Products  
PCMCIA Flash Memory Card  
FLB Series  
Card Family and Version Information  
FLB 21-24  
Based on Am29F016 for 5V only applications  
FLB21  
FLB22  
FLB23  
FLB24  
No Attribute Memory, no Write Protect  
With Attribute Memory, no Write Protect  
No Attribute Memory, with Write Protect  
With Attribute Memory, with Write Protect  
Example P/N 7P XXX FLB 22 SS T ZZ  
Based on Am29F080 for 5V only applications  
FLB 25-28  
FLB25  
FLB26  
FLB27  
FLB28  
No Attribute Memory, no Write Protect  
With Attribute Memory, no Write Protect  
No Attribute Memory, with Write Protect  
With Attribute Memory, with Write Protect  
Example P/N 7P XXX FLB 26 SS T ZZ  
Ordering Information  
7P XXX FLBYY SS T ZZ  
where  
XXX:  
002 1)  
004  
2MB  
4MB  
6MB  
8MB  
006 1)  
008  
010 1)  
012  
10MB  
12MB  
14MB  
16MB  
18MB  
20MB  
24MB  
28MB  
32MB  
36MB  
40MB  
014 1)  
016  
018 1)  
020  
024 2)  
028 2)  
032 2)  
036 2)  
040 2)  
1) available only for FLB26  
2) available only for FLB22  
FLBYY:  
SS:  
Card Version (See Card Family and Version Information)  
00  
01  
02  
WEDC Silkscreen  
Blank Housing, Type I  
Blank Housing, Type I Recessed  
T:  
C
I**  
Commercial  
Industrial  
ZZ:  
15  
150ns  
Notes: Options without attribute memory and with hardware write protect switch are available.  
** Denotes advanced information.  
10  
August 2000 Rev. 3 - ECO #13126  
PC Card Products  
PCMCIA Flash Memory Card  
FLB Series  
CIS Information for FLB Series Cards  
Address Value Description  
Address Value  
Description  
CISTPL_DEVICE  
TPL_LINK  
Address Value Description  
94H  
96H  
98H  
9AH  
9CH  
9EH  
A0H  
A2H  
A4H  
A6H  
A8H  
AAH  
ACH  
E
S
I
G
45H  
53H  
49H  
47H  
4EH  
53H  
20H  
49H  
4EH  
43H  
4FH  
52H  
50H  
00H  
02H  
40H  
42H  
E
D
01H  
03H  
45H  
44H  
FLASH = 150ns (device  
writable)  
04H  
06H  
44H  
46H  
48H  
4AH  
4CH  
4EH  
50H  
52H  
54H  
56H  
58H  
5AH  
5CH  
5EH  
60H  
62H  
64H  
66H  
68H  
6AH  
6CH  
6EH  
70H  
72H  
74H  
76H  
78H  
7AH  
7CH  
7EH  
80H  
82H  
84H  
86H  
I
53H  
0EH  
1EH  
2EH  
3EH  
4EH  
5EH  
6EH  
7EH  
8EH  
9EH  
FFH  
49H  
37H  
50H  
30H  
1)  
N
CARD SIZE: 4MB  
8MB  
7
S
P
SPACE  
12MB  
0
I
16MB  
x
N
C
O
R
P
20MB  
1)  
x
24MB  
F
46H  
4CH  
42H  
32H  
2)  
28MB  
L
32MB  
B
36MB  
2
AEH  
B0H  
O
R
4FH  
52H  
40MB  
x
08H  
0AH  
0CH  
0EH  
10H  
12H  
14H  
16H  
18H  
1AH  
1CH  
1EH  
20H  
22H  
24H  
26H  
28H  
2AH  
END OF DEVICE  
CISTPL_JEDEC_C  
TPL_LINK  
-
2DH  
2DH  
2DH  
31H  
35H  
20H  
00H  
43H  
4FH  
50H  
59H  
52H  
49H  
47H  
48H  
54H  
20H  
45H  
4CH  
45E  
43H  
54H  
52H  
B2H  
B4H  
B6H  
B8H  
BAH  
BCH  
BEH  
C0H  
C2H  
C4H  
C6H  
C8H  
A
41H  
54H  
45H  
44H  
20H  
00H  
31H  
39H  
39H  
37H  
00H  
FFH  
-
18H  
02H  
01H  
ADH  
17H  
03H  
42H  
01H  
FFH  
T
-
E
AMD - ID  
1
D
29F016B - ID  
CISTPL_DEVICE_A  
TPL_LINK  
5
SPACE  
SPACE  
END TEXT  
1
END TEXT  
9
EEPROM - 200ns  
Device Size = 2KBytes  
END OF TUPLE  
CISTPL_DEVICEGEO  
TPL_LINK  
C
9
O
7
P
END TEXT  
END OF LIST  
Y
1EH  
06H  
02H  
11H  
01H  
01H  
01H  
01H  
R
DGTPL_BUS  
DGTPL_EBS  
DGTPL_RBS  
DGTPL_WBS  
DGTPL_PART  
FLASH DEVICE  
NON-INTERLEAVED  
CISTPL_MANFID  
TPL_LINK(04H)  
I
1)  
Address Value Description  
G
H
T
4CH  
4EH  
58H  
30  
31  
32  
33  
34  
0
1
2
3
4
SPACE  
E
L
2CH  
2EH  
30H  
32H  
E
C
T
R
20H  
04H  
TPLMID_MANF: LSB  
F6H EDI  
01H EDI  
30  
32  
34  
36  
38  
0
PLMID_MANF: MSB  
LSB: Number Not  
Assign.  
MSB: Number Not  
Assign.  
2
4
6
8
34H  
88H  
O
00H  
4FH  
36H  
38H  
3AH  
3CH  
3EH  
8AH  
8CH  
8EH  
90H  
92H  
N
00H  
15H  
47H  
04H  
01H  
4EH  
49H  
43H  
20H  
44H  
2)  
I
C
CISTPL_VERS1  
TPL_LINK  
32  
34  
36  
38  
2
4
6
8
TPLLV1_MAJOR  
TPLLV1_MINOR  
SPACE  
D
11  
August 2000 Rev. 3 - ECO #13126  
PC Card Products  
PCMCIA Flash Memory Card  
FLB Series  
Revision History  
Date of revision  
23-Dec-98  
rev  
Description  
0
1
2
3
Initial release  
Logo change  
27-May-99  
30-May-00  
1-Aug-00  
Added Page 9, Added top of page 10  
Corrected Timing Errors, pgs. 6 & 7  
White Electronic Designs Corporation  
One Research Drive, Westborough, MA 01581, USA  
tel: (508) 366 5151  
fax: (508) 836 4850  
www.whiteedc.com  
12  
August 2000 Rev. 3 - ECO #13126  
PC Card Products  
厂商 型号 描述 页数 下载

WEDC

 		7P001FEA0200C15 [ Flash Card, 1MX8, 150ns, CARD-68 ] 6 页

WEDC

 		7P001FEA0300C15 [ Flash Card, 1MX8, 150ns, CARD-68 ] 6 页

WEDC

 		7P001FLG0100C15 [ Flash Card, 512MX16, 150ns, CARD-68 ] 11 页

ETC

 		7P001FLG0100C20 周边其他\n[ Peripheral Miscellaneous ] 13 页

WEDC

 		7P001FLG0100I15 [ Flash Card, 512MX16, 150ns, CARD-68 ] 11 页

WEDC

 		7P001FLG0100I20 [ Flash Card, 512MX16, 200ns, CARD-68 ] 11 页

WEDC

 		7P001FLG0101C15 [ Flash Card, 512MX16, 150ns, CARD-68 ] 11 页

WEDC

 		7P001FLG0101C20 [ Flash Card, 512MX16, 200ns, CARD-68 ] 11 页

WEDC

 		7P001FLG0101I15 [ Flash Card, 512MX16, 150ns, CARD-68 ] 11 页

ETC

 		7P001FLG0101I20 周边其他\n[ Peripheral Miscellaneous ] 13 页

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