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7P004FLV2702C15

型号:

7P004FLV2702C15

描述:

EEPROM\n[ EEPROM ]

品牌:

ETC[ ETC ]

页数:

13 页

PDF大小:

157 K

PCMCIA Flash Memory Card  
FLV Series  
PCMCIA Flash Memory Card  
General Description  
1 MEGABYTE through 40 MEGABYTE (Intel/Sharp based)  
Features  
Low cost High Density Linear Flash Card  
• Supports 3V or 5V only systems  
• x8/ x16 Data Interface  
WEDC’s FLV Series Flash memory cards offer high density  
linear Flash solid state storage solutions for code and data  
storage, high performance disk emulation and execute in  
place (XIP) applications in mobile PC and dedicated  
(embedded) equipment.  
FLV series cards conform to the PCMCIA international  
standard  
•Based on Intel/Sharp FlashFile Components  
•Fast Read Performance  
- 150ns @ 5V  
The card’s control logic provides the system interface and  
controls the internal Flash memories. The card can be  
read/written in byte-wide or word-wide mode which allows  
for flexible integration into various systems. Combined with  
file management software, such as Flash Translation Layer  
(FTL), FLV Flash cards provide removable high-  
performance disk emulation.  
- 200ns @ 3.3V  
• High Performance Random Writes  
- 8µs Typical Word Write Time @ 5V  
- 17µs Typical Word Write Time @ 3.3V  
The FLV series offers low power modes controlled by  
registers. Cards contain separate 2kB EEPROM memory for  
Card Information Structure (CIS) which can be used for easy  
identification of card characteristics.  
• Automated Write and Erase Algorithms  
- Command User Interface  
• 100,000 Erase Cycles per Block  
The WEDC FLV series is based on Intel/Sharp Flash  
memories.  
• 64K word symmetrical Block Architecture  
• PC Card Standard Type I Form Factor  
Note: Standard options include attribute memory.Cards  
without attribute memory are available. Cards are also  
available with or without a hardware write protect switch.  
Architecture Overview  
WEDC’s FLV series is designed to support from 2 to 20 of 4Mb, 8Mb or 16MB components, providing a wide  
range of density options. Cards are based on the 28F004SC (4Mb), 28F008SC (8Mb) and 28F016SC (16Mb)  
devices for 3.3V or 5V only applications. Devices codes for the 28F004SC, 28F008SC and the 28F016SC are: A7H,  
A6H and AAH respectively. Systems should be able to recognize all three codes. Cards utilizing the 8Mb  
components provide densities ranging from 2MB to 20MB in 2MB increments, cards utilizing 16Mb components  
provide densities ranging from 4MB to 40MB in 4MB increments. 4 Mbit memory devices are used only for  
smallest capacity cards (1MB).  
In support of the PC Card 95 standard for word wide access, devices are paired. Therefore, the Flash array is  
structured in 64K word (128kBytes) blocks. Write, read and block erase operations can be performed as either a  
word or byte wide operation . By multiplexing A0, CE1# and CE2#, 8-bit hosts can access all data on data lines  
DQ0 - DQ7.  
The FLA21-FLA28 series also supports the following PCMCIA compatible register functions: Soft Reset via the  
Configuration Option Register, Power Down (sleep mode) via the Configuration and Status Register and  
monitoring of Ready/Busy, Soft Reset and Power Down via the Card Status Register (cards without attribute  
memory do not have registers).  
The FLV series cards conform to the PC Card (PCMCIA) and JEIDA standards, providing electrical and physical  
compatibility. The PC Card form factor offers an industry standard pinout and mechanical outline, allowing density  
upgrades without system design changes.  
WEDC’s standard cards are shipped with WEDC’s Logo. Cards are also available with blank housings (no Logo).  
The blank housings are available in both a recessed (for label) and flat housing. Please contact your WEDC sales  
representative for further information on Custom artwork.  
1
August 2000 Rev. 4 - ECO #13133  
PC Card Products  
PCMCIA Flash Memory Card  
FLV Series  
Block Diagram  
Device type Manuf ID Device ID  
28F004SC  
28F008SC  
28F016SC  
89  
89  
A7  
A6  
H
H
H
H
H
Device Pair (N/2 - 1)  
Device (N-1)  
CSn  
Device (N-2)  
89  
AA  
H
Array  
Address  
Bus  
ADDRESS  
BUFFER  
ADDRESS BUS  
A1-A25  
Control  
Address  
Bus  
M Res  
WE#  
OE#  
WL#  
RL#  
WH#  
RH#  
CSn  
Control Logic  
PCMCIA Interface  
CE2#  
CE1#  
Cn  
C0  
Device Pair 1  
Device 3  
REG#  
A0  
WP  
Device 2  
Device 0  
CS1  
CS0  
At/Reg enable  
Ctrl  
SR Clr  
Reg Clr  
/SR  
/PD  
CS0  
Device Pair 0  
Device 1  
Card  
Management  
Registers  
4000h  
0000h  
Vcc  
RH#  
WL# RL#  
WH#  
DATA  
BUS  
Q8-Q15  
DATA  
BUS  
Q0-Q7  
Vcc  
attrib. mem  
CIS  
EEPROM 2kB  
control  
Q0-Q7  
Vcc  
I/O buffer  
DATA  
BUS  
D0-D7  
DATA  
BUS  
D8-D15  
Registers in Attribute Memory Space  
CSR  
Configuration Status Register: ADRS=4002h  
Write Only  
Register NAME  
Status Reg.  
ADDRESS  
PDwn  
not supported  
not supported  
D7 D6 D5 D4  
D3 D2 D1 D0  
Power Down; active High  
4100h  
D2  
1=Place all memory devices in power down mode  
0=normal operation  
Power On default=0  
4002h  
4000h  
Config. and Status Reg.  
Configuration Option Register  
SR  
Read Only  
Status Register: ADRS=4100h  
COR  
not supported  
SReset  
not supported  
R/BSY  
PDwn  
Configuration Option Register: ADRS=4000h  
Write Only  
D7 D6  
D5 D4 D3  
D2 D1 D0  
LREQ  
SRES  
-Configuration Index-  
D5  
1=Reset  
0=Normal operation  
Power On default D5=0  
D3  
Represents the state of SRESET bit in COR (4000h)  
D0  
D7 D6 D5 D4 D3 D2 D1  
D7 Soft Reset, active High  
1 = Reset State  
0 = End Reset State  
Represents the state of Power Down bit (D2) in CSR (4002h)  
D6  
LevelReq (not supported)  
1=Power Down  
D0  
D5-D0  
Configuration index (not supported)  
Reflects the card's Ready/Busy signal (pin 16) driven  
by memory components Ready/Busy outputs.This bit allows  
software polling of the card's Ready/Busy status.  
1=Ready  
2
August 2000 Rev. 4 - ECO #13133  
PC Card Products  
PCMCIA Flash Memory Card  
FLV Series  
Pinout  
Pin  
1
2
3
4
5
6
7
8
Signal name  
GND  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
CE1#  
A10  
I/O  
Function  
Ground  
Data bit 3  
Data bit 4  
Data bit 5  
Active  
Pin  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
65  
66  
67  
68  
Signal name  
GND  
CD1#  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
CE2#  
VS1  
I/O  
Function  
Ground  
Card Detect 1  
Data bit 11  
Data bit 12  
Data bit 13  
Data bit 14  
Data bit 15  
Card Enable 2  
Voltage Sense 1  
Reserved  
Active  
LOW  
I/O  
I/O  
I/O  
I/O  
I/O  
I
I
I
I
I
I
I
I
I
O
O
I/O  
I/O  
I/O  
I/O  
I
Data bit 6  
Data bit 7  
Card enable 1  
Address bit 10  
Output enable  
Address bit 11  
Address bit 9  
Address bit 8  
Address bit 13  
Address bit 14  
Write Enable  
Ready/Busy  
Supply Voltage  
Prog. Voltage  
Address bit 16  
Address bit 15  
Address bit 12  
Address bit 7  
Address bit 6  
Address bit 5  
Address bit 4  
Address bit 3  
Address bit 2  
Address bit 1  
Address bit 0  
Data bit 0  
LOW  
LOW  
I
O
LOW  
LOW  
9
OE#  
A11  
A9  
A8  
A13  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
RFU  
RFU  
A17  
A18  
A19  
A20  
A21  
Vcc  
Vpp2  
A22  
Reserved  
I
I
I
I
I
Address bit 17  
Address bit 18  
Address bit 19  
Address bit 20  
Address bit 21  
Supply Voltage  
Prog. Voltage  
Address bit 22  
Address bit 23  
Address bit 24  
Address bit 25  
Voltage Sense 2  
Card Reset  
Extended Bus cycle  
Reserved  
Attrib Mem Select  
Bat. Volt. Detect 2  
Bat. Volt. Detect 1  
Data bit 8  
A14  
WE#  
RDY/BSY#  
Vcc  
Vpp1  
A16  
A15  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
DQ0  
DQ1  
DQ2  
WP  
LOW  
LOW  
2MB(3)  
4MB(3)  
N.C.  
N.C.  
8MB(3)  
16MB(3)  
32MB(3)  
64MB(3)  
N.C.  
I
I
I
I
I
I
I
I
I
I
I
I
I
O
I
A23  
A24  
A25  
VS2  
RST  
HIGH  
Low(2,)  
Wait#  
RFU  
REG#  
BVD2  
BVD1  
DQ8  
DQ9  
DQ10  
CD2#  
GND  
O
I
O
O
I/O  
I/O  
O
I
I
(2)  
(2)  
I/O  
I/O  
I/O  
O
Data bit 1  
Data bit 2  
Write Potect  
Ground  
Data bit 9  
Data bit 10  
Card Detect 2  
Ground  
HIGH  
O
LOW  
GND  
Notes:  
1. RDY/BSY signal is an “Open drain” type output, pull-up resistor on host side is required.  
2. Wait#, BVD1 and BVD2 are driven high for compatibility.  
3. Shows density for which specified address bit is MSB. Higher order address bits are no  
connects (ie 4MB A21 is MSB A22 - A25 are NC).  
Mechanical  
Interconnect area  
1.6mm ± 0.05  
(0.063”)  
3.0mm MIN  
10.0mm MIN  
(0.400”)  
1.0mm ± 0.05  
(0.039”)  
54.0mm ± 0.10  
(2.126”)  
Substrate area  
85.6mm ± 0.20  
(3.370”)  
1.0mm ± 0.05  
(0.039”)  
10.0mm MIN  
(0.400”)  
3.3mm ± T1 (0.130”)  
T1=0.10mm interconnect area  
T1=0.20mm substrate area  
3
August 2000 Rev. 4 - ECO #13133  
PC Card Products  
PCMCIA Flash Memory Card  
FLV Series  
Card Signal Description  
Symbol  
Type  
Name and Function  
INPUT  
A0 through A25 enable direct addressing of up to  
64MB of memory on the card. Signal A0 is not used in word access mode.  
A25 is the most significant bit  
ADDRESS INPUTS:  
A0 - A25  
INPUT/OUTPUT  
INPUT  
DQ0 THROUGH DQ15 constitute the bi-  
DATA INPUT/OUTPUT:  
directional databus. DQ15 is the MSB.  
DQ0 - DQ15  
CE1#, CE2#  
CE1# enables even byte accesses, CE2#  
CARD ENABLE 1 AND 2:  
enables odd byte accesses. Multiplexing A0, CE1# and CE2# allows 8-bit  
hosts to access all data on DQ0 - DQ7.  
INPUT  
Active low signal gating read data from the memory  
OUTPUT ENABLE:  
card.  
OE#  
INPUT  
Active low signal gating write data to the memory card.  
WRITE ENABLE:  
WE#  
OUTPUT  
Indicates status of internally timed erase or  
READY/BUSY OUTPUT:  
RDY/BSY#  
program algorithms. A high output indicates that the card is ready to  
accept accesses. A low output indicates that one or more devices in the  
memory card are busy with internally timed erase or write activities.  
OUTPUT  
OUTPUT  
Provide card insertion detection. These signals  
are internally connected to ground on the card. The host shall monitor  
these signals to detect card insertion (pulled-up on host side).  
Write protect reflects the status of the Write Protect  
switch on the memory card. WP set to high = write protected, providing  
internal hardware write lockout to the Flash array.  
CARD DETECT 1 and 2:  
CD1#, CD2#  
WP  
WRITE PROTECT:  
If card does not include optional write protect switch, this signal will be  
pulled low internally indicating write protect = "off".  
N.C.  
Provides programming voltages  
PROGRAM/ERASE POWER SUPPLY:  
for card . Not connected for 3.3V/5V only card.  
VPP1, VPP2  
(3.3V or 5.0V nominal).  
CARD POWER SUPPLY:  
CARD GROUND  
VCC  
GND  
REG#  
INPUT  
Active low signal, enables access to  
ATTRIBUTE MEMORY SELECT :  
Attribute Memory Plane, occupied by Card Information Structure and Card  
Registers.  
INPUT  
Active high signal for placing card in Power-on default state.  
RESET:  
Reset can be used as a Power-Down signal for the memory array.  
This signal is pulled high internally for compatibility. No wait states  
RST  
OUTPUT  
OUTPUT  
OUTPUT  
WAIT:  
WAIT#  
are generated.  
These signals are pulled high to  
BATTERY VOLTAGE DETECT:  
maintain SRAM card compatibility.  
BVD1, BVD2  
VS1, VS2  
Notifies the host socket of the card's VCC  
VOLTAGE SENSE:  
requirements. VS1 grounded and VS2 is open to indicate a 3.3V/5V card.  
RESERVED FOR FUTURE USE  
NO INTERNAL CONNECTION TO CARD:  
floating  
RFU  
N.C.  
pin may be driven or left  
Functional Truth Table  
READ function  
Common Memory  
Attribute Memory  
Function Mode  
/CE2 /CE1 A0  
/OE /WE  
/REG D15-D8  
D7-D0  
/REG D15-D8  
D7-D0  
High-Z  
Standby Mode  
Byte Access (8 bits)  
H
H
H
L
H
L
L
X
L
H
X
X
X
L
L
L
L
X
H
H
H
H
X
H
H
H
H
High-Z  
High-Z  
High-Z  
Odd-Byte Even-Byte  
Odd-Byte  
High-Z  
Even-Byte  
Odd-Byte  
X
L
L
L
L
High-Z  
High-Z Even-Byte  
High-Z Not Valid  
Not Valid Even-Byte  
Not Valid  
Word Access (16 bits)  
Odd-Byte Only Access  
WRITE function  
L
L
H
High-Z  
High-Z  
Standby Mode  
Byte Access (8 bits)  
H
H
H
L
H
L
L
L
H
X
L
H
X
X
X
H
H
H
H
X
L
L
L
L
X
H
H
H
H
X
X
X
X
X
L
L
L
L
X
X
X
X
X
X
Even-Byte  
Odd-Byte  
Even-Byte  
X
Even-Byte  
X
Word Access (16 bits)  
Odd-Byte Only Access  
Odd-Byte Even-Byte  
Odd-Byte  
L
X
4
August 2000 Rev. 4 - ECO #13133  
PC Card Products  
PCMCIA Flash Memory Card  
FLV Series  
Absolute Maximum Ratings (1)  
Note:  
(1) Stress greater than those listed under  
“Absolute Maximum ratings” may cause  
permanent damage to the device. This is a  
stress rating only and functional operation at  
these or any other conditions greater than  
those indicated in the operational sections of  
this specification is not implied. Exposure to  
absolute maximum rating conditions for  
extended periods may affect reliability.  
Operating Temperature TA (ambient)  
Commercial  
Industrial  
Storage Temperature  
Commercial  
Industrial  
0°C to +60 °C  
-40°C to +85 °C  
-30°C to +80 °C  
-40°C to +85 °C  
-0.5V to VCC+0.5V  
-0.5V to +7.0V  
Voltage on any pin relative to VSS  
VCC supply Voltage relative to VSS  
DC Characteristics (1)  
Vcc = 3.3V / 5V  
Symbol Parameter  
Density Notes 3.3V Vcc  
5V Vcc  
Units Test Conditions  
(3)  
(3)  
(Mbytes)  
Typ Max Typ Max  
VCC Read Current  
All  
10  
12  
20  
35  
mA VCC = VCCmax  
I
CCR  
tcycle = 150ns,CMOSlevels  
28F008SC  
28F016SC  
VCC Program Current  
All  
All  
60  
40  
75  
50  
mA  
I
CCW  
VCC Erase Current  
mA  
I
CCE  
VCC Standby Current  
2MB  
2
50 200 60 230  
400 420  
50 200 60 230  
400 420  
µA VCC = VCCmax  
28F008SC  
Control Signals = VCC  
Reset = VSS, CMOS levels  
20MB  
I
CCS  
(CMOS)  
4MB  
40MB  
2
28F016SC  
CMOS Test Conditions: VCC = 5V ± 5%, VIL = VSS ± 0.2V, VIH = VCC ± 0.2V  
Notes:  
1. All currents are RMS values unless otherwise specified. ICCR, ICCW and ICCE are based on Byte  
wide operations. For 16 bit operation values are double.  
2. Control Signals: CE1#, CE2#, OE#, WE#, REG#.  
3. Typical: VCC = 5V, T = +25C.  
Symbol  
Parameter  
Notes  
Min  
Max  
Units  
Test Conditions  
Input Leakage Current  
1
±20  
µA  
VCC = VCCMAX  
Vin =VCC or VSS  
VCC = VCCMAX  
Vout =VCC or VSS  
I
LI  
Output Leakage Current  
1
±20  
0.8  
µA  
I
LO  
Input Low Voltage  
Input High Voltage  
Output Low Voltage  
Output High Voltage  
1
1
1
1
1
0
V
V
V
V
V
V
V
V
V
V
IL  
0.7VCC VCC+0.5  
0.4  
IH  
IOL = 3.2mA  
IOH = -2.0mA  
OL  
OH  
LKO  
VCC-0.4  
2.0  
VCC  
VCC Erase/Program  
Lock Voltage  
Notes:  
1. Values are the same for byte and word wide modes for all card densities.  
2. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 µA when VIN = GND due to  
internal pull-up resistors. Leakage currents on RST will be <150µA when VIN=VCC due to internal  
pull-down resistor.  
5
August 2000 Rev. 4 - ECO #13133  
PC Card Products  
PCMCIA Flash Memory Card  
FLV Series  
AC Characteristics  
Read Timing Parameters  
250ns  
150ns  
SYMBOL  
Parameter  
(PCMCIA)  
Min  
Max  
Min  
Max  
Unit  
tC(R)  
Read Cycle Time  
150  
250  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ta(A)  
Address Access Time  
Card Enable Access Time  
Output Enable Access Time  
Address Setup Time  
150  
150  
75  
20  
0
250  
250  
125  
30  
0
ta(CE)  
ta(OE)  
tsu(A)  
tsu(CE)  
th(A)  
Card Enable Setup Time  
Address Hold Time  
20  
20  
0
30  
30  
0
th(CE)  
tv(A)  
Card Enable Hold Time  
Output Hold from Address  
Change  
tdis(CE)  
tdis(OE)  
ten(CE)  
ten(OE)  
trec(RSR)  
Output Disable Time from CE#  
75  
75  
100  
100  
ns  
ns  
ns  
ns  
ns  
Output Disable Time from OE#  
Output Enable Time from CE#  
Output Enable Time from OE#  
5
5
5
5
Power Down recovery to Output  
Delay. VCC = 5V  
500  
600  
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.  
Read Timing Diagram  
tc(R)  
th(A)  
ta(A)  
A[25::0], /REG  
/CE1, /CE2  
tv(A)  
ta(CE)  
tsu(CE)  
NOTE 1  
NOTE 1  
th(CE)  
ta(OE)  
tsu(A)  
tdis(CE)  
/OE  
tdis(OE)  
ten(OE)  
D[15::0]  
DATA VALID  
Note: Signal may be high or low in this area.  
6
August 2000 Rev. 4 - ECO #13133  
PC Card Products  
PCMCIA Flash Memory Card  
FLV Series  
Write Timing Parameters  
150ns @ 5V 250ns @ 3.3V  
SYMBOL  
Parameter  
(PCMCIA)  
Min  
Max Min Max Unit  
tCW  
Write Cycle Time  
Write Pulse Width  
Address Setup Time  
150  
80  
250  
150  
30  
ns  
ns  
ns  
ns  
ns  
tw(WE)  
tsu(A)  
20  
tsu(A-WEH) Address Setup Time for WE#  
100  
100  
180  
180  
tsu(CE-  
WEH)  
Card Enable Setup Time for WE#  
tsu(D-WEH) Data Setup Time for WE#  
50  
20  
20  
80  
30  
30  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
th(D)  
Data Hold Time  
trec(WE)  
tdis(WE)  
tdis(OE)  
ten(WE)  
ten(OE)  
Write Recover Time  
Output Disable Time from WE#  
Output Disable Time from OE#  
Output Enable Time from WE#  
Output Enable Time from OE#  
75  
75  
100  
100  
5
5
5
5
tsu(OE-WE) Output Enable Setup from WE#  
th(OE-WE) Output Enable Hold from WE#  
10  
10  
0
10  
10  
0
tsu(CE)  
th(CE)  
Card Enable Setup Time from OE#  
Card Enable Hold Time  
20  
20  
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.  
Write Timing Diagram  
tc(W )  
A [2 5 ::0 ], /R E G  
ts u (A -W E H )  
tre c (W E )  
th (C E )  
ts u (C E -W E H )  
tsu (C E )  
/C E 1 , /C E 2  
N O T E  
1
N O T E  
1
/O E  
th (O E -W E )  
th (D )  
tw (W E )  
ts u (A )  
/W E  
tsu (O E -W E )  
ts u (D -W E H )  
D [1 5 ::0 ](D in )  
N O T E  
2
D A T A IN P U T  
td is (W E )  
td is(O E )  
te n (O E )  
te n (W E )  
N O T E  
2
D [1 5 ::0 ](D o u t)  
Notes:  
1. Signal may be high or low in this area.  
2. When the data I/O pins are in the output state, no signals shall be applied to the  
data pins (D15 - D0) by the host system.  
7
August 2000 Rev. 4 - ECO #13133  
PC Card Products  
PCMCIA Flash Memory Card  
FLV Series  
Data Write and Erase Performance (1,3)  
VCC = 5V ± 5%, TA = 0C to + 70C  
Symbol Parameter  
Notes  
Min Typ(1) Max Units  
Word/Byte Program time  
4
8
µs  
tWHQV1  
tEHQV1  
tWHQV2  
tEHQV2  
Block Program Time  
Block Erase Time  
device SC  
device SC  
0.4  
0.9  
0.5  
1.1  
sec  
sec  
VCC = 3.3V ± 0.3V, TA = 0C to + 70C  
Symbol Parameter  
Notes  
Min Typ(1) Max Units  
Word/Byte Program time  
4
17  
1.1  
1.8  
µs  
tWHQV1  
tEHQV1  
tWHQV2  
tEHQV2  
Block Program Time  
device SC  
device SC  
sec  
sec  
Block Erase Time  
Notes:  
1. Typical: Nominal voltages and TA = 25C.  
2. Excludes system overhead.  
3. Valid for all speed options.  
4. To maximize system performance RDY/BSY# signal should be polled.  
8
August 2000 Rev. 4 - ECO #13133  
PC Card Products  
PCMCIA Flash Memory Card  
FLV Series  
PRODUCT MARKING  
WED7P016FLV2600C15 C995 9915  
EDI  
Date code  
Lot code / trace number  
Part number  
Company Name  
Note:  
Some products are currently marked with our pre-merger company name/acronym (EDI). During our  
transition period, some products will also be marked with our new company name/acronym (WED).  
Starting October 2000 all PCMCIA products will be marked only with the WED prefix.  
PART NUMBERING  
7P016FLV2600C15  
Card access time  
15  
25  
150ns  
250ns  
Temperature range  
C
I
Commercial 0°C to +70°C  
Industrial -40°C to +85°C  
Packaging option  
00  
Standard, type 1  
Card family and version  
- See Card Family and Version Info. for details (next page)  
Card capacity  
016 16MB  
PC card  
P
Standard PCMCIA  
R
Ruggedized PCMCIA  
Card technology  
7
8
FLASH  
SRAM  
9
August 2000 Rev. 4 - ECO #13133  
PC Card Products  
PCMCIA Flash Memory Card  
FLV Series  
Card Family and Version Information  
FLV 21-FLV24  
Based on 28F008SC for 3.3V / 5V application  
FLV 21  
No Attribute Memory, No Write Protect switch  
With Attribute Memory, No Write Protect switch  
No Attribute Memory,with Write Protect switch  
With Attribute Memory, with Write Protect switch  
FLV 22  
FLV 23  
FLV 24  
Example P/N 7P XXX FLV 22 SS T ZZ  
FLV 25-FLV28 Based on 28F016SC for 3.3V / 5V application  
FLV 25  
FLV 26  
FLV 27  
FLV 28  
No Attribute Memory, No Write Protect switch  
With Attribute Memory, No Write Protect switch  
No Attribute Memory,with Write Protect switch  
With Attribute Memory, with Write Protect switch  
Example P/N 7P XXX FLV 26 SS T ZZ  
Ordering Information  
7P XXX FLVYY SS T ZZ  
where  
XXX:  
002 1)  
004  
2MB  
4MB  
6MB  
8MB  
006 1)  
008  
010 1)  
012  
10MB  
12MB  
14MB  
16MB  
18MB  
20MB  
24MB  
28MB  
32MB  
36MB  
40MB  
014 1)  
016  
018 1)  
020  
024 2)  
028 2)  
032 2)  
036 2)  
040 2)  
1) available only for FLV21 - FLV24  
2) available only for FLV25 - FLV28  
FLVYY:  
SS:  
Card Version (See Card Family and Version Information)  
00  
01  
02  
WEDC Silkscreen  
Blank Housing, Type I  
Blank Housing, Type I Recessed  
T:  
C
I**  
Commercial  
Industrial  
ZZ:  
15  
150ns  
Note: Options without attribute memory and with hardware write protect switch are available.  
** Denotes advanced information.  
10  
August 2000 Rev. 4 - ECO #13133  
PC Card Products  
PCMCIA Flash Memory Card  
FLV Series  
CIS Information for FLV Series Cards  
Example for FLV26 family, built with 28F016SC.  
Address  
00H  
Value  
01H  
03H  
53H  
0EH  
1EH  
2EH  
3EH  
4EH  
5EH  
6EH  
7EH  
8EH  
9EH  
FFH  
1CH  
04H  
02H  
51H  
0EH  
1EH  
2EH  
3EH  
4EH  
5EH  
6EH  
7EH  
8EH  
9EH  
FFH  
18H  
03H  
89H  
AAH  
FFH  
17H  
03H  
42H  
01H  
FFH  
Description  
CISTPL_DEVICE  
TPL_LINK  
Address  
2AH  
2CH  
2EH  
30H  
32H  
34H  
36H  
38H  
3AH  
3CH  
3EH  
40H  
42H  
44H  
46H  
48H  
4AH  
4CH  
4EH  
50H  
52H  
Value  
1DH  
03H  
02H  
11H  
FFH  
1AH  
06H  
01H  
00H  
00H  
40H  
03H  
FFH  
1EH  
06H  
02H  
11H  
01H  
01H  
01H  
01H  
Description  
CISTPL_DEVICE_OA  
TPL_LINK  
02H  
04H  
FLASH = 150ns (device writable)  
CARD SIZE: 4MB  
8MB  
3 VOLT OPERATION  
ROM - 250ns  
06H  
END OF DEVICE  
CISTPL_CONF  
TPL_LINK  
12MB  
16MB  
20MB  
TPCC_SZ  
24MB  
TPCC_LAST  
28MB  
TPCC_RADR  
32MB  
TPCC_RADR  
36MB  
TPCC_RMSK  
40MB  
CISTPL_END  
08H  
0AH  
0CH  
0EH  
10H  
12H  
END OF DEVICE  
CISTPL_DEVICE_OC  
TPL_LINK  
CISTPL_DEVICEGEO  
TPL_LINK  
DGTPL_BUS  
3 VOLT OPERATION  
FLASH = 250ns (device writable)  
CARD SIZE: 4MB  
4MB  
DGTPL_EBS  
DGTPL_RBS  
DGTPL_WBS  
DGTPL_PART  
FLASH DEVICE  
NON-INTERLEAVED  
CISTPL_MANFID  
TPL_LINK(04H)  
TPLMID_MANF: LSB  
TPLMID_MANF: MSB  
12MB  
16MB  
20MB  
54H  
56H  
58H  
5AH  
5CH  
5EH  
60H  
62H  
64H  
66H  
68H  
6AH  
6CH  
6EH  
70H  
72H  
20H  
04H  
F6H  
01H  
00H  
00H  
15H  
47H  
05H  
00H  
45H  
44H  
49H  
37H  
50H  
30H  
24MB  
28MB  
EDI  
EDI  
32MB  
36MB  
LSB: Number Not Assigned  
40MB  
MSB: Number Not Assigned  
14H  
16H  
18H  
1AH  
1CH  
1EH  
20H  
22H  
24H  
26H  
28H  
END OF DEVICE  
CISTPL_JEDEC_C  
TPL_LINK  
CISTPL_VERS1  
TPL_LINK  
TPLLV1_MAJOR  
INTEL - ID  
TPLLV1_MINOR  
INTEL 28F016SC – ID(4-40MB)  
END OF DEVICE  
CISTPL_DEVICE_A  
TPL_LINK  
E
D
I
7
P
0
EEPROM - 200ns  
Device Size = 2KBytes  
END OF TUPLE  
11  
August 2000 Rev. 4 - ECO #13133  
PC Card Products  
PCMCIA Flash Memory Card  
FLV Series  
CIS Information for FLV Series Cards (Cont.)  
Address  
C8H  
CAH  
CCH  
CEH  
D0H  
D2H  
D4H  
D6H  
D8H  
DAH  
DCH  
DEH  
E0H  
E2H  
E4H  
E6H  
E8H  
EAH  
ECH  
EEH  
F0H  
Value  
20H  
49H  
4EH  
43H  
4FH  
52H  
50H  
4FH  
52H  
41H  
54H  
45H  
44H  
20H  
00H  
31H  
39H  
39H  
37H  
00H  
FFH  
Description  
Address  
74H  
Value  
34H  
30H  
46H  
4CH  
56H  
32H  
36H  
2DH  
2DH  
2DH  
31H  
35H  
20H  
00H  
Description  
SPACE  
4
76H  
0
I
78H  
F
N
7AH  
7CH  
7EH  
80H  
L
C
V
O
2
R
6
P
82H  
-
O
84H  
-
R
86H  
-
A
88H  
1
5
T
8AH  
8CH  
8EH  
E
SPACE  
END TEXT  
D
SPACE  
90H  
92H  
C
O
43H  
4FH  
END TEXT  
1
94H  
96H  
98H  
9AH  
9CH  
9EH  
A0H  
A2H  
A4H  
A6H  
A8H  
AAH  
ACH  
AEH  
B0H  
B2H  
B4H  
B6H  
B8H  
BAH  
BCH  
BEH  
C0H  
C2H  
C4H  
C6H  
P
50H  
59H  
52H  
49H  
47H  
48H  
54H  
20H  
45H  
4CH  
45H  
43H  
54H  
52H  
4FH  
4EH  
49H  
43H  
20H  
44H  
45H  
53H  
49H  
47H  
4EH  
53H  
9
Y
9
R
7
I
END TEXT  
END OF LIST  
G
H
T
SPACE  
E
L
E
C
T
R
O
N
I
C
SPACE  
D
E
S
I
G
N
S
12  
August 2000 Rev. 4 - ECO #13133  
PC Card Products  
PCMCIA Flash Memory Card  
FLV Series  
Revision History  
revision  
00  
01  
rev date  
Sep-98  
02-Dec-98  
7-Jun-99  
descrpt  
initial release  
CIS, value in line 0CH  
Logo change  
02  
03  
30-May-00 Added Page 9, Revised Page  
10, Changed Page Header  
04  
1-Aug-00  
Corrected Timing Error pg. 6  
White Electronic Designs Corporation  
One Research Drive, Westborough, MA 01581, USA  
tel: (508) 366 5151  
fax: (508) 836 4850  
www.whiteedc.com  
13  
August 2000 Rev. 4 - ECO #13133  
PC Card Products  
厂商 型号 描述 页数 下载

WEDC

7P001FEA0200C15 [ Flash Card, 1MX8, 150ns, CARD-68 ] 6 页

WEDC

7P001FEA0300C15 [ Flash Card, 1MX8, 150ns, CARD-68 ] 6 页

WEDC

7P001FLG0100C15 [ Flash Card, 512MX16, 150ns, CARD-68 ] 11 页

ETC

7P001FLG0100C20 周边其他\n[ Peripheral Miscellaneous ] 13 页

WEDC

7P001FLG0100I15 [ Flash Card, 512MX16, 150ns, CARD-68 ] 11 页

WEDC

7P001FLG0100I20 [ Flash Card, 512MX16, 200ns, CARD-68 ] 11 页

WEDC

7P001FLG0101C15 [ Flash Card, 512MX16, 150ns, CARD-68 ] 11 页

WEDC

7P001FLG0101C20 [ Flash Card, 512MX16, 200ns, CARD-68 ] 11 页

WEDC

7P001FLG0101I15 [ Flash Card, 512MX16, 150ns, CARD-68 ] 11 页

ETC

7P001FLG0101I20 周边其他\n[ Peripheral Miscellaneous ] 13 页

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