DATA SHEET
NEC's 1310 nm InGaAsP MQW-FP
LASER DIODE IN CAN PACKAGE
FOR 155 Mb/s, 622 Mb/s
NX5304
Series
AND 1.25 Gb/s APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER
PO = 5.0 mW
• LOW THRESHOLD CURRENT
Ith = 10 mA
• HIGH SPEED
tr = 0.3 ns MAX
tf = 0.3 ns MAX
• WIDE OPERATING TEMPERATURE RANGE
TC = -40 to +85°C
DESCRIPTION
• InGaAs MONITOR PIN-PD
NEC's NX5304 Series is a 1 310 nm Multiple Quantum
Well (MQW) structured Fabry-Perot (FP) laser diodes with
InGaAs monitor PIN-PD. These devices are designed for
156 Mb/s: STM-1 (I-1, S-1.1, L-1.1), 622 Mb/s: STM-4 (I-4, S-
4.1) application and ideal for Synchronous Digital Hierarchy
(SDH) system.
• CAN PACKAGE
Ø5.6 mm
• FIBER COUPLING POINT
5.8 mm
• BASED ON TELCORDIA RELIABILITY
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PART NUMBER
NX5304 SERIES
SYMBOL
PARAMETER AND CONDITIONS
UNIT
MIN.
TYP.
MAX.
Vop
Operating Voltage, Po = 5.0 mW, TC = −40 to +85°C
V
1.1
1.5
15
Ith
Threshold Current
mA
10
25
30
TC = 85°C
Pth
ηd
Threshold Output Power, TC = −40 to +85°C, IF = Ith
Differential Efficiency
µW
W/A
dB
100
0.4
−1.2
200
0.32
∆ηd
Temperature Dependence of Differential Efficiency
−3.0
ηd (@ 85°C)
ηd = 10 log
ηd (@ 25°C)
λC
Center Wavelength, Po = 5.0 mW, RMS (−20 dB), TC = −40 to +85°C
Temperature Dependence of Center Wavelength, TC = −40 to +85°C
Spectral Width, Po = 5.0 mW, RMS (−20 dB), TC = −40 to +85°C
Rise Time, 10-90%
nm
nm/°C
nm
1 263
1 360
0.5
∆λ/∆T
0.4
1.0
σ
tr
tf
2.5
ns
0.15
0.15
0.3
Fall Time, 90-10%
ns
0.3
Im
ID
Monitor Current, VR = 5 V, Po = 5.0 mW
Monitor Dark Current, VR = 5 V
µA
200
500
0.1
800
10
nA
VR = 5 V, TC = −40 to +85°
500
20
Ct
Monitor PD Terminal Capacitance, VR = 5 V, f = 1 MHz
Tracking Error*1, Im = const. (@ Po = 5.0 mW, TC = 25°C), TC = −40 to +85°C
pF
dB
6
γ
−1.0
1.0
Notes continued on next page
California Eastern Laboratories
