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XX1002QH

型号:

XX1002QH

品牌:

MIMIX[ MIMIX BROADBAND ]

页数:

5 页

PDF大小:

374 K

2.5-6.0/5.0-12.0 GHz GaAs MMIC  
Active Doubler  
December 2005 - Rev 08-Dec-05  
X1002  
Features  
Chip Device Layout  
Compact, Low-Cost Design  
Octave Bandwidth Operation  
+16 dBm Output Power  
-35 dBc Fundamental Leakage  
+5.0V, 125mA Bias Supply  
100% On-Wafer RF, DC and Output Power Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband's 2.5-6.0/5.0-12.0 GHz GaAs MMIC  
Active Doubler delivers + 16 dBm of output power.  
The circuit combines an active doubler with an  
output buffer amplifier that delivers constant power  
over a range of input powers. The circuit has excellent  
rejection of the fundamental and harmonic products  
and requires a single positive bias supply.This MMIC  
uses Mimix Broadband's 2 um GaAs HBT device model  
technology to ensure high reliability and uniformity.  
The chip has surface passivation to protect and  
provide a rugged part with backside via holes and  
gold metallization to allow either a conductive epoxy  
or eutectic solder die attach process.This device is  
well suited for Millimeter-wave Point-to-Point Radio,  
LMDS, SATCOM and VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vcc)  
Supply Current (Id)  
Input Power (RF Pin)  
+6.0 VDC  
200 mA  
+10.0 dBm  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Table  
1
1
Junction Temperature (Tj)  
MTTF Table  
(1) Junction temperature affects a device's MTTF. It is  
recommended to keep junction temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Input Frequency Range (fin)  
Units  
GHz  
GHz  
dB  
Min.  
2.5  
5.0  
-
-
-
Typ.  
-
-
Max.  
6.0  
12.0  
-
Output Frequency Range (fout)  
Input Return Loss (S11)  
-15  
TBD  
+16  
-
-35  
-30  
-20  
+5.0  
120  
Output Return Loss (S22)  
Saturated Output Power (Psat)  
RF Input Power (RF Pin)  
dB  
-
dBm  
dBm  
dBc  
dBc  
dBc  
VDC  
mA  
-
+3.0  
-
-
-
-3.0  
Fundamental Leakage (fin)  
Third Harmonic Leakage (3xfin)  
Fourth Harmonic Leakage (4xfin)  
Bias Voltage (Vcc)  
-
-
-
-
-
+5.5  
140  
Supply Current  
Page 1 of 5  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
2.5-6.0/5.0-12.0 GHz GaAs MMIC  
Active Doubler  
December 2005 - Rev 08-Dec-05  
X1002  
Doubler Measurements  
Icc (mA ) vs . Fin (GH z): Vcc = 5.0V, Pin = - 3, 0 an d + 3 d Bm  
Pout (dBm ) vs . Fo ut (GHz): Pin = - 3, 0 and + 3 dBm  
160  
20  
19  
140  
18  
17  
120  
16  
15  
100  
14  
13  
80  
12  
11  
Vcc = 5. 0V  
60  
10  
Pin = - 3 dB m  
Pin = 0 dBm  
Pin = + dBm  
9
8
7
6
5
40  
20  
0
Pin = - 3 d B m  
Pin = 0 dBm  
3
P in = + 3 dB m  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
6
6.5  
7
4
5
6
7
8
9
10  
11  
12  
13  
14  
Fin (GHz)  
Fout (GHz)  
Fun damental Leakage (dBc) vs . Fin ( GHz)  
Pout_3xF in (dBc) v s . 3xFi n (GHz)  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
Pin = +3 dBm (bl ue)  
Pin = 0dBm (gr een)  
Pin = -3dB m ( red)  
Pin = +3dBm (bl ue)  
Pin = 0dBm (gr een)  
Pin = -3dBm (re d)  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
6
6.5  
7
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
Fin ( GHz )  
3xFin (GHz)  
Pout_4xF in (dBc) v s . 4xFi n (GHz)  
S11  
0
-5  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-10  
-15  
-20  
-25  
-30  
Pin = +3dBm (bl ue)  
Pin = 0dBm (gr een)  
Pin = -3dB m ( red)  
0
5
10  
15  
20  
25  
30  
8
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
Frequency (GHz)  
4xFin (GHz)  
Page 2 of 5  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
2.5-6.0/5.0-12.0 GHz GaAs MMIC  
Active Doubler  
December 2005 - Rev 08-Dec-05  
X1002  
Mechanical Drawing  
0.632  
(0.025)  
0.800  
(0.031)  
2
0.371  
1
(0.015)  
0.300  
(0.012)  
3
0.0  
0.0  
2.000  
(0.079)  
(Note: Engineering designator is 5DBL0644)  
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.  
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold  
All Bond Pads are 0.200 x 0.100 (0.008 x 0.004).  
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.  
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.566 mg.  
Bond Pad #1 (RF In)  
Bond Pad #2 (Vcc)  
Bond Pad #3 (RF Out)  
Bias Arrangement  
Vcc  
2
RF In  
1
RF Out  
3
Page 3 of 5  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
2.5-6.0/5.0-12.0 GHz GaAs MMIC  
Active Doubler  
December 2005 - Rev 08-Dec-05  
X1002  
App Note [1] Biasing - As shown in the bonding diagram, this is a single supply device which is operated by biasing Vcc with  
Vcc=5.0 V and Icc~120 mA.  
App Note [2] Bias Arrangement - The DC pad (Vcc) needs to have DC bypass capacitance. (~100 - 200 pF) as close to the device as  
possible.  
App Note [3] Bonding - It is recommended that two bandwires be used for each RF In and RF Out connection for maximum band-  
width and output power.  
MTTFTables  
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.  
Backplate  
MTTF Hours  
FITs  
Temperature  
55 deg Celsius  
75 deg Celsius  
95 deg Celsius  
2.67E+06  
3.01E+05  
4.46E+04  
375  
3321  
22440  
Bias Conditions: Vcc=5.0V, Icc=125 mA  
Functional Schematic  
Page 4 of 5  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
2.5-6.0/5.0-12.0 GHz GaAs MMIC  
Active Doubler  
December 2005 - Rev 08-Dec-05  
X1002  
Handling and Assembly Information  
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the  
human body and the environment. For safety, observe the following procedures:  
Do not ingest.  
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical  
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.  
Observe government laws and company regulations when discarding this product.This product must be  
discarded in accordance with methods specified by applicable hazardous waste procedures.  
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support  
devices or systems without the express written approval of the President and General Counsel of Mimix  
Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for  
surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in  
accordance with instructions for use provided in the labeling, can be reasonably expected to result in a  
significant injury to the user. (2) A critical component is any component of a life support device or system whose  
failure to perform can be reasonably expected to cause the failure of the life support device or system, or to  
affect its safety or effectiveness.  
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied  
in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-  
static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care,  
sharp tweezers.  
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the  
backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as  
possible.The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are  
Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy  
sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total  
2
die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001  
thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated  
collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere  
is recommended.The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold  
+
Germanium should be avoided).The work station temperature should be 310 C 10 C. Exposure to these  
-
extreme temperatures should be kept to minimum.The collet should be heated, and the die pre-heated to avoid  
excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.  
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to  
the die's gold bond pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x  
0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm  
(0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be  
avoided.Thermo-compression bonding is recommended though thermosonic bonding may be used providing  
the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters.  
Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short  
as possible.  
Page 5 of 5  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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