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7P004FLD2100C15

型号:

7P004FLD2100C15

品牌:

MICROSEMI[ Microsemi ]

页数:

12 页

PDF大小:

169 K

PCMCIA Flash Memory Card  
FLD Series  
White Electronic Designs  
PCMCIA Flash Memory Card - 4 MEGABYTE through  
40 MEGABYTE (AMD based)  
GENERAL DESCRIPTION  
ARCHITECTURE OVERVIEW  
WEDC’s PCMCIA Flash memory cards offer high den-  
sity linear Flash solid state storage solutions for code  
and data storage, high performance disk emulation and  
execute in place (XIP) applications in mobile PC and  
dedicated (embedded) equipment'  
WEDC’s FLD series is designed to support from two to  
twenty (see Block diagram) 16Mb components, provid-  
ing a wide range of density options' Cards are based  
on the Am29F017 (16Mb) device for 5V only applica-  
tions' The device code for the Am29F017 is 3Dh and the  
manufacturer’s ID is 01h' This card is compatible with  
D series cards from AMD' Cards utilizing 16Mb compo-  
nents provide densities ranging from 4MB to 40MB in  
4MB increments'  
Packaged in a PCMCIA type I housing, each card con-  
tains a connector, an array of Flash memories pack-  
aged in TSOP packages and card control logic' The  
card control logic provides the system interface and  
controls the internal Flash memories' Combined with  
file management software, such as Flash Translation  
Layer (FTL), WEDC Flash cards provide removable high-  
performance disk emulation'  
In support of the PC Card (PCMCIA) standard for word  
wide access, devices are paired' Therefore, the Flash  
array is structured in 64K word (128kB)blocks' Write,  
read operations can be performed as either a word or  
byte wide operation' By multiplexingA0, CE1# and CE2#,  
8-bit hosts can access all data on data lines DQ0 -  
DQ7' The FLD series cards conform with the PC Card  
Standard (formerly PCMCIA) and supported JEIDA, pro-  
viding electrical and physical compatibility' The PC Card  
form factor offers an industry standard pinout and me-  
chanical outline, allowing density upgrades without sys-  
tem design changes'  
The WEDC FLD series is based on AMD Flash memo-  
ries' The FLD series offers byte wide and word wide  
operation, low power modes and Card Information Struc-  
ture (CIS) for easy identification of card characteristics'  
Note:  
Standard options include attribute memoryꢀ Cards without attribute  
memory are availableꢀ Cards are also available with or without a  
hardware write protect switchꢀ  
WEDC’s standard cards are shipped with WEDC’s  
silkscreen design' Cards are also available with blank  
housings (no silkscreen)' The blank housings are avail-  
able in both a recessed (for label) and flat housing'  
Please contact your WEDC sales representative for fur-  
ther information on Custom artwork'  
FEATURES  
n Low cost High Density Linear Flash Card  
n Supports 5V only systems  
n Based on AMD Am29F017 Flash Components  
- low standby power without entering reset mode  
- allows standard access from standby mode  
n Fast Read Performance  
- 150ns Maximum Access Time  
n x8/ x16 Data Interface  
n High Performance Random Writes  
- 7µs typical Word Write Time  
n Automated Write and Erase Algorithms  
- AMD Command Set  
n 1 000,000 Erase Cycles per Block  
n 64K word (128kB) symmetrical Block Architecture  
n PC Card Standard Type I Form Factor  
March 2003 Revꢀ 6  
ECO #16058  
1
White Electronic Designs Corporation • (508) 485-4000 • wwwꢀwhiteedcꢀcom  
PCMCIA Flash Memory Card  
FLD Series  
White Electronic Designs  
BLOCK DIAGRAM  
Device type  
Manuf ID Device ID  
Am29F017  
01H  
3DH  
Device Pair (N/2 - 1)  
Device (N-1)  
Device (N-2)  
CSn  
Array  
Address  
Bus  
ADDRESS  
BUFFER  
ADDRESS BUS  
A1-A25  
Control  
Address  
Bus  
M Res  
WE  
OE  
WL  
Control Logic  
PCMCIA Interface  
RL  
WH  
RH  
CE2  
1
Qn  
CE  
CSn  
CS  
Device Pair 1  
REG  
Q2  
Q0  
Device 3  
Device 1  
Device 2  
Device 0  
A0  
0
CS  
1
WP  
Ctrl At/Reg enable  
Device Pair 0  
CS  
0
WL RL  
DATA  
BUS  
Q0-Q7  
Vcc  
RH  
WH  
DATA  
BUS  
Q8-Q15  
Vcc  
0000h  
attrib. mem  
CIS  
EEPROM 2kB  
control  
Q0-Q7  
Vcc  
I/O buffer  
DATA  
BUS  
D8-D15  
DATA  
BUS  
D0-D7  
White Electronic Designs Corporation • Marlborough MA • (508) 485-4000  
2
PCMCIA Flash Memory Card  
FLD Series  
White Electronic Designs  
PINOUT CONTꢀ  
PINOUT  
Pin  
1
Signal name  
GND  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
CE1  
A10  
I/O  
Function  
Ground  
Active  
Pin  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
65  
66  
67  
68  
Signal name  
GND  
CD1  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
CE2  
I/O  
Function  
Ground  
Active  
2
I/O  
Data bit 3  
O
I/O  
I/O  
I/O  
I/O  
I
Card Detect 1  
Data bit 11  
LOW  
3
I/O  
Data bit 4  
4
I/O  
Data bit 5  
Data bit 12  
5
I/O  
Data bit 6  
Data bit 13  
6
I/O  
Data bit 7  
Data bit 14  
7
I
I
Card enable 1  
Address bit 10  
Output enable  
Address bit 11  
Address bit 9  
Address bit 8  
Address bit 13  
Address bit 14  
Write Enable  
Ready/Busy  
Supply Voltage  
Prog- Voltage  
Address bit 16  
Address bit 15  
Address bit 12  
Address bit 7  
Address bit 6  
Address bit 5  
Address bit 4  
Address bit 3  
Address bit 2  
Address bit 1  
Address bit 0  
Data bit 0  
LOW  
LOW  
Data bit 15  
8
I
Card Enable 2  
Voltage Sense 1N-C-  
Reserved  
LOW  
9
OE  
I
VS1  
O
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
A11  
I
RFU  
RFU  
A17  
A9  
I
Reserved  
A8  
I
I
I
I
I
I
Address bit 17  
Address bit 18  
Address bit 19  
Address bit 20  
Address bit 21  
Supply Voltage  
Prog- Voltage  
Address bit 22  
Address bit 23  
Address bit 24  
Address bit 25  
Voltage Sense 2  
Card Reset  
A13  
I
A18  
A14  
I
A19  
WE  
RDY/BSY  
VCC  
VPP1  
A16  
I
LOW  
LOW  
A20  
2MB(3)  
4MB(3)  
O
A21  
VCC  
N-C-  
VPP2  
A22  
N-C-  
8MB(3)  
16MB(3)  
32MB(3)  
64MB(3)  
N-C-  
I
I
I
A15  
I
A23  
A12  
I
A24  
I
A7  
I
A25  
I
A6  
I
VS2  
O
I
A5  
I
RST  
Wait  
RFU  
REG  
BVD2  
BVD1  
DQ8  
DQ9  
DQ10  
CD2  
GND  
HIGH  
A4  
I
O
Extended Bus cycle LOW(2)  
Reserved  
A3  
I
I
A2  
I
Attrib Mem Select  
A1  
I
O
Bat- Volt- Detect 2  
Bat- Volt- Detect 1  
Data bit 8  
(2)  
(2)  
A0  
I
O
DQ0  
DQ1  
DQ2  
WP  
GND  
I/O  
I/O  
I/O  
O
I/O  
I/O  
O
Data bit 1  
Data bit 9  
Data bit 2  
Data bit 10  
Write Potect  
Ground  
HIGH  
O
Card Detect 2  
Ground  
LOW  
Notes:  
1ꢀ RDY/BSY is an open drain output, external pull-up resistor is requiredꢀ  
2ꢀ Wait, BVD1 and BVD2 are driven high for compatibilityꢀ  
3ꢀ Shows density for which specified address bit is MSBꢀ  
Higher order address bits are no connects (ie 4MB A21 is MSB A22 - A25 are NC)ꢀ  
.063  
MECHANICAL  
3.370  
.039  
2.126  
.400  
.039  
.130  
3
White Electronic Designs Corporation • (508) 485-4000 • wwwꢀwhiteedcꢀcom  
PCMCIA Flash Memory Card  
FLD Series  
White Electronic Designs  
CARD SIGNAL DESCRIPTION  
Symbol  
Type  
Name and Function  
A0 ꢀ A25  
INPUT  
ADDRESS INPUTS: A0 through A25 enable direct addressing of up to 64MB of memory  
on the card- Signal A0 is not used in word access mode- A25 is the most significant bit  
DQ0 ꢀ DQ15  
CE1, CE2  
INPUT/OUTPUT  
DQ15 is the MSB-  
DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the biꢀdirectional databus-  
INPUT  
CARD ENABLE 1 AND 2: CE1 enables even byte accesses, CE2 enables odd byte  
accesses- Multiplexing A0, CE1 and CE2 allows 8ꢀbit hosts to access all data on DQ0 ꢀ DQ7-  
OE  
WE  
INPUT  
INPUT  
OUTPUT ENABLE: Active low signal gating read data from the memory card-  
WRITE ENABLE: Active low signal gating write data to the memory card-  
RDY/BSY  
OUTPUT  
READY/BUSY OUTPUT: Indicates status of internally timed erase or program algorithms-  
A high output indicates that the card is ready to accept accesses- A low output indicates  
that one or more devices in the memory card are busy with internally timed erase or  
write activities-  
CD1, CD2  
OUTPUT  
OUTPUT  
CARD DETECT 1 and 2: Provide card insertion detection- These signals are connected  
to ground internally on the memory card- The host socket interface circuitry shall supply  
10Kꢀohm or larger pullꢀup resistors on these signal pins-  
WP  
WRITE PROTECT: Write protect reflects the status of the Write Protect switch on the  
memory card- WP set to high = write protected, providing internal hardware write lockout  
to the Flash array-If card does not include optional write protect switch, this signal will be  
pulled low internally indicating write protect = “off”-  
VPP1, VPP2  
VCC  
N-C-  
PROGRAM/ERASE POWER SUPPLY: Not connected for 5V only card-  
CARD POWER SUPPLY: 5-0V for all internal circuitry-  
GROUND: for all internal circuitry-  
GND  
REG  
INPUT  
INPUT  
ATTRIBUTE MEMORY SELECT : provides access to Flash memory card registers and  
Card Information Structure in the Attribute Memory Plane-  
RST  
RESET: Active high signal for placing card in Powerꢀon default state- Reset can be used  
as a PowerꢀDown signal for the memory array-  
WAIT  
OUTPUT  
OUTPUT  
WAIT: This signal is pulled high internally for compatibility- No wait states are generated-  
BVD1, BVD2  
BATTERY VOLTAGE DETECT: These signals are pulled high to maintain SRAM card  
compatibility-  
VS1, VS2  
OUTPUT  
VOLTAGE SENSE: Notifies the host socket of the card’s VCC requirements- VS1 and  
VS2 are open to indicate a 5V card has been inserted-  
RFU  
N-C-  
RESERVED FOR FUTURE USE  
NO INTERNAL CONNECTION TO CARD: pin may be driven or left floating  
(2)  
ABSOLUTE MAXIMUM RATINGS  
Operating Temperature TA (ambient)  
Commercial  
Industrial  
0°C to +60 °C  
ꢀ40°C to +85 °C **  
Storage Temperature  
Commercial  
ꢀ30°C to +80 °C  
Industrial  
ꢀ40°C to +85 °C **  
ꢀ0-5V to VCC+0-5V (1)  
ꢀ0-5V to +7-0V  
Voltage on any pin relative to VSS  
V
CC supply Voltage relative to VSS  
** Advanced information  
Notes:  
(1) During transitions, inputs may undershoot to -2ꢀ0V or overshoot to VCC +2ꢀ0V for periods less than 20nsꢀ  
(2) Stress greater than those listed under “Absolute Maximum ratings” may cause permanent damage to the deviceꢀ  
This is a stress rating only and functional operation at these or any other conditions greater than those indicated in  
the operational sections of this specification is not impliedꢀ Exposure to absolute maximum rating conditions for  
extended periods may affect reliabilityꢀ  
White Electronic Designs Corporation • Marlborough MA • (508) 485-4000  
4
PCMCIA Flash Memory Card  
FLD Series  
White Electronic Designs  
(1)  
DC CHARACTERISTICS  
Sym Parameter  
Density  
(Mbytes)  
Notes  
Typ(4)  
Max  
Units  
Test Conditions  
ICCR  
VCC Read Current  
All  
75  
mA  
VCC = 5V +/ꢀ 10%  
tcycle = 150ns  
ICCW  
ICCE  
ICCS  
VCC Program Current  
VCC Erase Current  
All  
All  
150  
150  
mA  
mA  
VCC  
Standby  
Current  
(4MB)  
2MB  
2,3  
80  
230  
CC µ=A5VV +/ꢀ 10%  
Control Signals = VIL or VOH  
Reset = VSS  
Test Conditions: VCC = 5V ± 10%, VI = VIL or VIH  
Notes:  
1ꢀ All currents are RMS values unless otherwise specifiedꢀ ICCR, ICCW and ICCE are based on Word wide operationsꢀ  
2ꢀ Control Signals: CE1, CE2, OE, WE, REGꢀ  
3ꢀ ICCD and ICCS are specified for lowest density card for each component type (2MB for 8Mb components and 4MB for 16Mb components) This  
represents a single pair of devicesꢀ For higher densities multiply the number of device pairs by the specified current in the tableꢀ For example a  
40MB card will use 10 device pairs of 16Mb componentsꢀ The maximum ICCD will be 10 x 40µA = 400µAꢀ The maximum ICCS will be  
10 x 230µA = 2ꢀ3mAꢀ  
4ꢀ Typical: VCC = 5V, T = +25°Cꢀ  
Symbol  
Parameter  
Notes  
Current  
Min  
Max  
Units  
Test Conditions  
ILI  
Input  
Leakage  
Leakage  
1
1
±20  
±20  
CC = 5µVA+V/ꢀ 10%  
VIN =VCC or VSS  
ILO  
Output  
Current  
CC = 5µVA+V/ꢀ 10%  
VOUT =VCC or VSS  
V
Input Low Voltage  
1
1
1
1
1
0
2
0-8  
0-26  
4-2  
V
V
V
V
V
IL  
V
IH  
Input High Voltage  
VOL  
VOH  
VLKO  
Output Low Voltage  
IOL = 4mA  
IOH = ꢀ4mA  
Output High Voltage  
VCC Erase/ProgramLock Voltage  
3-98  
3-2  
Notes:  
1ꢀ Values are the same for byte and word wide modes for all card densitiesꢀ  
2ꢀ Exceptions: Leakage currents on CE1, CE2, OE, REG and WE will be < 500 µA when VIN = GND due to internal pull-up resistorsꢀ Leakage  
currents on RST will be <150µA when VIN=VCC due to internal pull-down resistorꢀ  
5
White Electronic Designs Corporation • (508) 485-4000 • wwwꢀwhiteedcꢀcom  
PCMCIA Flash Memory Card  
FLD Series  
White Electronic Designs  
AC CHARACTERISTICS  
READ TIMING PARAMETERS  
150ns  
SYM (PCMCIA)  
tC(R)  
Parameter  
Min  
Max  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Read Cycle Time  
150  
ta(A)  
Address Access Time  
Card Enable Access Time  
Output Enable Access Time  
Address Setup Time  
Card Enable Setup Time  
Address Hold Time  
150  
150  
75  
20  
0
ta(CE)  
ta(OE)  
tsu(A)  
tsu(CE)  
th(A)  
20  
20  
0
th(CE)  
tv(A)  
Card Enable Hold Time  
Output Hold from Address Change  
Output Disable Time from CE  
Output Disable Time from OE  
Output Enable Time from CE  
Output Enable Time from OE  
tdis(CE)  
tdis(OE)  
ten(CE)  
75  
75  
5
5
ten(OE)  
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2ꢀ1 specificationsꢀ  
READ TIMING DIAGRAM  
tC(R)  
tA(A)  
tH(A)  
A[25::0], REG  
tV(A)  
tA(CE)  
tSU(CE)  
CE1, CE2  
NOTE 1  
NOTE 1  
tH(CE)  
tA(OE)  
tSU(A)  
tDIS(CE)  
OE  
tEN(OE)  
tDIS(OE)  
D[15::0]  
DATA VALID  
Note: Signal may be high or low in this areaꢀ  
White Electronic Designs Corporation • Marlborough MA • (508) 485-4000  
6
PCMCIA Flash Memory Card  
FLD Series  
White Electronic Designs  
WRITE TIMING PARAMETERS  
150ns  
SYM (PCMCIA)  
tCW  
Parameter  
Min  
150  
80  
Max  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Write Cycle Time  
tw(WE)  
Write Pulse Width  
tsu(A)  
Address Setup Time  
20  
tsu(AꢀWEH)  
tsu(CEꢀWEH)  
tsu(DꢀWEH)  
th(D)  
Address Setup Time for WE  
Card Enable Setup Time for WE  
Data Setup Time for WE  
Data Hold Time  
100  
100  
50  
20  
trec(WE)  
tdis(WE)  
Write Recover Time  
20  
Output Disable Time from WE  
Output Disable Time from OE  
Output Enable Time from WE  
Output Enable Time from OE  
Output Enable Setup from WE  
Output Enable Hold from WE  
Card Enable Setup Time from OE  
Card Enable Hold Time  
75  
75  
tdis(OE)  
ten(WE)  
5
5
ten(OE)  
tsu(OEꢀWE)  
th(OEꢀWE)  
tsu(CE)  
10  
10  
0
th(CE)  
20  
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2ꢀ1 specificationsꢀ  
WRITE TIMING DIAGRAM  
tC(W)  
A[25::0], REG  
t
SU(A-WEH)  
SU(CE-WEH)  
SU(CE)  
t
REC(WE)  
t
H(CE)  
t
t
CE1, CE2  
NOTE 1  
NOTE 1  
OE  
tH(OE-WE)  
tSU(A)  
tW(WE)  
WE  
tH(D)  
tSU(OE-WE)  
tSU(D-WEH)  
NOTE 2  
D[15::0](DIN  
)
DATA INPUT  
tDIS(WE)  
tEN(OE)  
tDIS(OE)  
tEN(WE)  
NOTE 2  
D[15::0](DOUT  
)
Notes: 1ꢀ Signal may be high or low in this areaꢀ  
2ꢀ When the data I/O pins are in the output state, no signals shall be applied to the data pins (D15 - D0) by the host systemꢀ  
7
White Electronic Designs Corporation • (508) 485-4000 • wwwꢀwhiteedcꢀcom  
PCMCIA Flash Memory Card  
FLD Series  
White Electronic Designs  
(1,3)  
DATA WRITE AND ERASE PERFORMANCE  
VCC = 5V ± 5%, TA = 0°C TO + 60°C  
SYM  
Parameter  
Notes  
Min  
Typ(1)  
7
Max  
300  
2-0  
8
Units  
µs  
Test Conditions  
tWHQV1 tEHQV1  
tWHQV2 tEHQV2  
Word/Byte Program time  
Block Program Time  
Block Erase Time  
2,4  
2
Excludes systemꢀlevel overhead  
0-5  
1
sec  
sec  
2
Excludes 00h prog- prior to erasure  
Notes:  
1ꢀ Typical: Nominal voltages and TA = 25°Cꢀ  
2ꢀ Excludes system overheadꢀ  
3ꢀ Valid for all speed optionsꢀ  
4ꢀ To maximize system performance RDY/BSY signal should be polledꢀ  
PRODUCT MARKING  
EDI  
WED 7P016FLD2200C15 C995 9915  
COMPANYNAME  
PART NUMBER  
LOT CODE/TRACE NUMBER  
DATE CODE  
PART NUMBERING  
7 P 016 FLD22 00 C 15  
CARD TECHNOLOGY  
7 FLASH  
8 SRAM  
PC CARD  
P Standard PCMCIA  
R Ruggedized PCMCIA  
CARDCAPACITY  
016 16MB  
CARD FAMILY AND VERSION  
ꢀ See Card Family and Version Info- for details (next page)  
PACKAGINGOPTION  
00 Standard, type 1  
TEMPERATURERANGE  
C = Commercial 0°C to +70°C  
I
= Industrial  
ꢀ40°C to +85°C  
CARD ACCESS TIME  
15 150ns  
25 250ns  
White Electronic Designs Corporation • Marlborough MA • (508) 485-4000  
8
PCMCIA Flash Memory Card  
FLD Series  
White Electronic Designs  
ORDERING INFORMATION  
7P XXX FLD22 SS T ZZ  
XXX  
004  
4MB  
008  
012  
016  
020  
024  
028  
032  
036  
040  
8MB  
12MB  
16MB  
20MB  
24MB  
28MB  
32MB  
36MB  
40MB  
SS  
00 WEDC Silkscreen  
01 Blank Housing, Type I  
02 Blank Housing, Type I Recessed  
T
C
I
= Commercial  
= Industrial  
ZZ  
15 150ns  
Notes: Options without attribute memory and with hardware write protect switch are availableꢀ  
CARD FAMILIES:  
FLD 21  
FLD 22  
FLD 23  
FLD 24  
ꢀ No Attribute memory, No WP switch  
ꢀ With Attribute Memory, No WP switch  
ꢀ No Attribute Memory, With WP switch  
ꢀ With Attribute Memory, With WP switch  
9
White Electronic Designs Corporation • (508) 485-4000 • wwwꢀwhiteedcꢀcom  
PCMCIA Flash Memory Card  
FLD Series  
White Electronic Designs  
CIS INFORMATION FOR FLD SERIES CARDS  
ADDRESS  
4CH  
4EH  
50H  
52H  
54H  
56H  
58H  
5AH  
5CH  
5EH  
60H  
62H  
64H  
66H  
68H  
6AH  
6CH  
6EH  
70H  
72H  
74H  
76H  
78H  
7AH  
66H  
68H  
6AH  
6CH  
6EH  
70H  
72H  
74H  
76H  
78H  
7AH  
7CH  
7EH  
80H  
82H  
84H  
86H  
88H  
8AH  
8CH  
8EH  
90H  
92H  
94H  
VALUE  
1)  
DESCRIPTION  
ADDRESS  
00H  
VALUE  
01H  
03H  
53H  
0EH  
1EH  
2EH  
3EH  
4EH  
5EH  
6EH  
7EH  
8EH  
9EH  
FFH  
18H  
02H  
01H  
3DH  
17H  
03H  
42H  
01H  
FFH  
1EH  
06H  
02H  
11H  
DESCRIPTION  
x
CISTPL_DEVICE  
1)  
x
02H  
TPL_LINK  
46H  
4CH  
44H  
32H  
2)  
F
04H  
FLASH = 150ns (device writable)  
L
06H  
CARD SIZE: 4MB  
8MB  
D
2
12MB  
x
16MB  
2DH  
2DH  
2DH  
31H  
35H  
20H  
00H  
43H  
4FH  
50H  
59H  
52H  
49H  
47H  
48H  
54H  
20H  
00H  
43H  
4FH  
50H  
59H  
52H  
49H  
47H  
48H  
54H  
20H  
45H  
4CH  
45E  
43H  
54H  
52H  
4FH  
4EH  
49H  
43H  
20H  
44H  
45H  
20MB  
24MB  
28MB  
1
32MB  
5
36MB  
SPACE  
40MB  
END TEXT  
08H  
0AH  
0CH  
0EH  
10H  
12H  
14H  
16H  
18H  
1AH  
1CH  
1EH  
20H  
22H  
24H  
26H  
28H  
2AH  
END OF DEVICE  
CISTPL_JEDEC_C  
TPL_LINK  
AMD ꢀ ID  
C
O
P
Y
INTEL  
29F017 ꢀ ID  
R
CISTPL_DEVICE_A  
TPL_LINK  
I
G
EEPROM ꢀ 200ns  
Device Size = 2KBytes  
END OF TUPLE  
CISTPL_DEVICEGEO  
TPL_LINK  
H
T
SPACE  
END TEXT  
C
DGTPL_BUS  
O
DGTPL_EBS  
P
01H  
01H  
01H  
01H  
DGTPL_RBS  
Y
DGTPL_WBS  
R
DGTPL_PART  
I
FLASH DEVICE  
NONꢀINTERLEAVED  
G
2CH  
2EH  
30H  
32H  
34H  
36H  
38H  
3AH  
3CH  
3EH  
40H  
42H  
44H  
46H  
48H  
4AH  
20H  
04H  
F6H  
01H  
00H  
00H  
15H  
47H  
04H  
01H  
45H  
44H  
49H  
37H  
50H  
30H  
CISTPL_MANFID  
TPL_LINK(04H)  
H
T
EDI  
EDI  
TPLMID_MANF: LSB  
TPLMID_MANF: MSB  
SPACE  
E
LSB: Number Not Assigned  
L
MSB: Number Not Assigned  
E
CISTPL_VERS1  
C
TPL_LINK  
T
TPLLV1_MAJOR  
R
TPLLV1_MINOR  
O
E
D
I
N
I
C
SPACE  
D
7
P
0
E
The shaded area (addresses 56H 58H) represents just some of the family versionsꢀ For all the versions see the Card Family and Version information-  
White Electronic Designs Corporation • Marlborough MA • (508) 485-4000  
10  
PCMCIA Flash Memory Card  
FLD Series  
White Electronic Designs  
CIS INFORMATION FOR FLD SERIES CARDS (CONTꢀ)  
ADDRESS  
96H  
VALUE  
53H  
49H  
47H  
4EH  
53H  
20H  
49H  
4EH  
43H  
4FH  
52H  
50H  
4FH  
52H  
41H  
54H  
45H  
44H  
20H  
00H  
31H  
39H  
39H  
37H  
00H  
00H  
DESCRIPTION  
S
98H  
I
9AH  
9CH  
9EH  
A0H  
A2H  
A4H  
A6H  
A8H  
AAH  
ACH  
AEH  
B0H  
B2H  
B4H  
B6H  
B8H  
BAH  
BCH  
BEH  
C0H  
C2H  
C4H  
C6H  
C8H  
G
N
S
SPACE  
I
N
C
O
R
P
O
R
A
T
E
D
SPACE  
END TEXT  
1
9
9
7
END TEXT  
END OF LIST  
1)  
Address  
Value  
Description  
4CH  
30  
31  
32  
33  
34  
0
1
2
3
4
4EH  
58H  
30  
0
2
4
6
8
32  
34  
36  
38  
2)  
32  
34  
2
4
11  
White Electronic Designs Corporation • (508) 485-4000 • wwwꢀwhiteedcꢀcom  
PCMCIA Flash Memory Card  
FLD Series  
White Electronic Designs  
Document Title  
PCMCIA Flash Memory Card - FLD Series  
Revision History  
Rev level  
rev 1  
Description  
Initial release  
Logo change  
Date  
December 24, 1998  
February 7, 1999  
rev 2  
Added card families  
Spelling errors  
Erase cycles 1 million  
Prog/erasure timing  
rev 3  
rev 4  
rev 5  
rev 6  
Logo change  
May 27, 1999  
May 31, 2000  
August 1, 2000  
March 5, 2003  
Added page 9  
Corrected Timing Errors on pgs' 6 & 7  
Host signals corrected to TTL level  
White Electronic Designs Corporation • Marlborough MA • (508) 485-4000  
12  
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