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FZT649D84Z

型号:

FZT649D84Z

品牌:

FAIRCHILD[ FAIRCHILD SEMICONDUCTOR ]

页数:

3 页

PDF大小:

46 K

Discrete Power & Signal  
Technologies  
July 1998  
FZT649  
E
B
SOT-223  
NPN Low Saturation Transistor  
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A  
continuous.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
FZT649  
Symbol  
Parameter  
Units  
Collector-Emitter Voltage  
25  
V
VCEO  
Collector-Base Voltage  
Emitter-Base Voltage  
35  
5
V
V
VCBO  
VEBO  
Collector Current - Continuous  
3
A
IC  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Max  
Characteristic  
Symbol  
Units  
FZT649  
Total Device Dissipation  
Thermal Resistance, Junction to Ambient  
2
W
PD  
62.5  
°C/W  
RqJA  
Page 1 of 2  
ã
1998 Fairchild Semiconductor Corporation  
fzt649.lwpPrNC 7/10/98 revB  
NPN Low Saturation Transistor  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
25  
35  
5
V
V
V
BVCEO  
BVCBO  
BVEBO  
ICBO  
IC = 10 mA  
IC = 100 mA  
IE = 100 mA  
100  
10  
nA  
uA  
VCB = 30 V  
VCB = 30 V, TA=100°C  
Emitter Cutoff Current  
100  
nA  
IEBO  
VEB = 4V  
ON CHARACTERISTICS*  
DC Current Gain  
hFE  
70  
100  
75  
-
IC = 50 mA, VCE = 2 V  
IC = 1 A, VCE = 2 V  
IC = 2 A, VCE = 2 V  
IC = 6 A, VCE = 2 V  
300  
15  
Collector-Emitter Saturation Voltage  
300  
600  
mV  
VCE(sat)  
IC = 1 A, IB = 100 mA  
IC = 3 A, IB = 300 mA  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
1.25  
1
V
V
VBE(sat)  
VBE(on)  
IC = 1 A, IB = 100 mA  
IC = 1 A, VCE = 2 V  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
Cobo  
50  
pF  
-
VCB = 10 V, IE = 0, f = 1MHz  
Transition Frequency  
fT  
150  
IC = 100 mA,VCE = 5 V, f=100MHz  
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%  
Page 2 of 2  
ã
1998 Fairchild Semiconductor Corporation  
fzt649.lwpPrNC 7/10/98 revB  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
QFET™  
QS™  
QT Optoelectronics™  
VCX™  
FASTr™  
ACEx™  
GlobalOptoisolator™  
GTO™  
HiSeC™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
E2CMOSTM  
EnSignaTM  
FACT™  
Quiet Series™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TinyLogic™  
UHC™  
ISOPLANAR™  
MICROWIRE™  
OPTOLOGIC™  
OPTOPLANAR™  
POP™  
FACT Quiet Series™  
FAST®  
PowerTrench®  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Obsolete  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. F1  
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