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FZT790AS62Z

型号：

FZT790AS62Z

品牌：

FAIRCHILD[ FAIRCHILD SEMICONDUCTOR ]

页数：

4 页

PDF大小：

52 K

下载PDF手册
FZT790A  
PNP Low Saturation Transistor  
4
•
These devices are designed with high current gain and low saturation  
voltage with collector currents up to 3A continuous.  
3
2
1
SOT-223  
1. Base 2.4. Collector 3. Emitter  
Absolute Maximum Ratings * T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
40  
CEO  
50  
V
CBO  
EBO  
5
V
I
- Continuous  
3
A
C
T , T  
Operating and Storage Junction Temperature Range  
- 55 ~ +150  
°C  
J
STG  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1. These ratings are based on a maximum junction temperature of 150degrees C.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Off Characteristics  
BV  
BV  
BV  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
I
= 10mA, I = 0  
60  
80  
5
V
V
V
CEO  
CBO  
EBO  
C
C
E
B
= 100µA, I = 0  
E
= 100µA, I = 0  
C
I
V
V
= 30V, I = 0  
100  
10  
nA  
µA  
CBO  
CB  
CB  
E
= 30V, I = 0, T = 100°C  
E
A
I
Emitter Cut-off Current  
V
= 4V, I = 0  
100  
nA  
EBO  
EB  
C
On Characteristics *  
h
DC Current Gain  
I
I
I
I
= 100mA, V = 2V  
70  
250  
80  
FE  
C
C
C
C
CE  
= 500mA, V = 2V  
550  
CE  
= 1A, V = 2V  
CE  
= 2A, V = 2V  
40  
CE  
V
V
V
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I
I
I
= 1A, I = 100mA  
300  
1.25  
1
mV  
V
CE(sat)  
BE(sat)  
BE(on)  
C
C
C
B
= 1A, I = 100mA  
B
= 1A, V = 2V  
V
CE  
Small Signal Characteristics  
C
Output Capacitance  
Transition Frequency  
V
= 10V, I = 0, f = 1MHz  
45  
pF  
obo  
CB  
E
f
I
= 10mA, V = 5V,  
75  
MHz  
T
C
CE  
f = 100MHz  
* Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤ 2.0%  
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.  
Thermal Characteristics  
Symbol  
Parameter  
Max.  
2
Units  
W
P
Total Device Dissipation  
Thermal Resistance, Junction to Ambient  
D
R
62.5  
°C/W  
θJA  
©2001 Fairchild Semiconductor Corporation  
Rev. A, December 2001  
Typical Characteristics  
1.6  
1.4  
1.2  
1
1.4  
Vce = 2.0V  
β = 10  
1.2  
1
- 40°C  
0.8  
- 40°C  
0.8  
0.6  
0.4  
0.2  
25°C  
0.6  
25°C  
125°C  
0.4  
125°C  
N
O
0.2  
B
E
0.001  
0.01  
0.1  
1
10  
0.0001  
0.001  
0.01  
0.1  
1
10  
I C- COLLECTOR CURRENT (A)  
I C - COLLECTOR CURRENT (A)  
Figure 1. Base-Emitter Saturation Voltage  
vs Collector Current  
Figure 2. Base-Emitter On Voltage  
vs Collector Current  
400  
350  
300  
250  
200  
150  
100  
50  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
f = 1.0MHz  
β == 10  
Cobo  
125°C  
25°C  
Cibo  
- 40°C  
0
0.01  
0.1  
1
10  
0.1  
0.5  
1
10 20  
50 100  
I C - COLLECTOR CURRENT (A)  
VCE - COLLECTOR VOLTAGE (V)  
Figure 3. Collector-Emitter Saturation Voltage  
vs Collector Current  
Figure 4. Input/Output Capacitance  
vs Reverse Bias Voltage  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1000  
Vce = 2.0V  
125°C  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
25°C  
- 40°C  
0
25  
50  
75  
100  
125  
150  
175  
0.0001  
0.001  
0.01  
0.1  
1
10  
TEMPERATURE [OC]  
I C - COLLECTOR CURRENT (A)  
Figure 5. Current Gain vs Collector Current  
Figure 6. Power Dissipation vs Ambient Temperature  
©2001 Fairchild Semiconductor Corporation  
Rev. A, December 2001  
Package Demensions  
SOT-223  
3.00 ±0.10  
MAX1.80  
+0.04  
–0.02  
0.06  
2.30 TYP  
4.60 ±0.25  
0.70 ±0.10  
°
~10  
°
0
+0.10  
–0.05  
(0.95)  
(0.95)  
0.25  
6.50 ±0.20  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. A, December 2001  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
ACEx™  
Bottomless™  
CoolFET™  
FAST®  
FASTr™  
FRFET™  
OPTOLOGIC™  
OPTOPLANAR™  
PACMAN™  
SMART START™  
STAR*POWER™  
Stealth™  
VCX™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
GlobalOptoisolator™  
GTO™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MicroPak™  
MICROWIRE™  
POP™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TruTranslation™  
TinyLogic™  
Power247™  
PowerTrench®  
QFET™  
QS™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER®  
FACT™  
FACT Quiet Series™  
UHC™  
UltraFET®  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. H4  
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