ZXMN10A07Z
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
am b
PARAMETER
S YMBOL
MIN.
TYP. MAX. UNIT CONDITIONS
S TATIC
Dra in -s o u rce b re a kd o w n vo lta g e
Ze ro g a te vo lta g e d ra in cu rre n t
Ga te -b o d y le a ka g e
V
100
V
A
nA
V
ID= 250A, VGS =0V
VDS = 100V, VGS =0V
VGS =Ϯ20V, VDS =0V
ID= 250A, VDS =VGS
(BR)DS S
I
1
DS S
I
100
GS S
Ga te -s o u rce th re s h o ld vo lta g e
V
2.0
GS (th )
S ta tic d ra in -s o u rce o n -s ta te
re s is ta n ce
R
0.7
0.9
⍀
V
V
V
= 10V, I = 1.5A
D
DS (o n )
GS
GS
DS
(1)
= 6V, I = 1A
D
⍀
(1) (3)
Fo rw a rd tra n s co n d u cta n ce
g
1.6
S
= 15V, I = 1A
D
fs
(3)
DYNAMIC
In p u t ca p a cita n ce
C
C
C
138
12
6
pF
pF
pF
is s
V
= 50V, V =0V
GS
DS
Ou tp u t ca p a cita n ce
o s s
rs s
f=1MHz
Re ve rs e tra n s fe r ca p a cita n ce
(2) (3)
S WITCHING
Tu rn -o n -d e la y tim e
Ris e tim e
t
t
t
t
1.8
1.5
4.1
2.1
2.9
0.7
1
ns
ns
d (o n )
V
R
= 50V, I = 1A
D
DD
r
≅6.0⍀, V = 10V
Tu rn -o ff d e la y tim e
Fa ll tim e
ns
G
GS
d (o ff)
f
ns
To ta l g a te ch a rg e
Ga te -s o u rce ch a rg e
Ga te d ra in ch a rg e
S OURCE-DRAIN DIODE
Q
Q
Q
nC
nC
nC
g
V
= 50V, V = 10V
GS
g s
g d
DS
I = 1A
D
(1)
Dio d e fo rw a rd vo lta g e
V
t
0.85
0.95
V
T =25°C, I = 1.5A,
j S
S D
V
=0V
GS
(3)
Re ve rs e re co ve ry tim e
27
12
ns
T =25°C, I = 1A,
rr
j
F
(3)
d i/d t=100A/s
Re ve rs e re co ve ry ch a rg e
Q
nC
rr
NOTES
(1) Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
ISSUE 6 - MAY 2004
4
S E M IC O N D U C T O R S
