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UZXMP3A16GTC

型号:

UZXMP3A16GTC

品牌:

ZETEX[ ZETEX SEMICONDUCTORS ]

页数:

8 页

PDF大小:

157 K

ZXMP3A16G  
30V P-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
(BR)DSS  
V
= -30V: R  
= 0.045 : I = -7.5A  
DS(on) D  
DESCRIPTION  
This new generation of trench MOSFETs from Zetex utilizes a unique structurethat  
combines the benefits of low on-resistance with fast switching speed. This makes  
them ideal for high efficiency, low voltage, power management applications.  
SOT223  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
SOT223 package  
APPLICATIONS  
DC-DC converters  
Power management functions  
Relay and soleniod driving  
Motor control  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY  
PER REEL  
ZXMP3A16GTA  
ZXMP3A16GTC  
7”  
12mm  
12mm  
1000 units  
4000 units  
13”  
DEVICE MARKING  
Top View  
ZXMP  
3A16  
ISSUE 3 - MAY 2007  
1
ZXMP3A16G  
ABSOLUTE MAXIMUM RATING  
PARAMETER  
SYMBOL  
VDSS  
VGS  
LIMIT  
-30  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
A
Ϯ20  
Continuous Drain Current (VGS= -10V; TA=25°C)(b)  
(VGS= -10V; TA=70°C)(b)  
ID  
-7.5  
-6.0  
-5.4  
(VGS= -10V; TA=25°C)(a)  
Pulsed Drain Current (c)  
IDM  
IS  
-24.9  
-3.2  
A
A
A
Continuous Source Current (Body Diode) (b)  
Pulsed Source Current (Body Diode)(c)  
ISM  
PD  
-24.9  
Power Dissipation at TA=25°C (a)  
Linear Derating Factor  
2.0  
16  
W
mW/°C  
Power Dissipation at TA=25°C (b)  
Linear Derating Factor  
PD  
3.9  
31  
W
mW/°C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +150  
°C  
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
RθJA  
VALUE  
62.5  
UNIT  
°C/W  
°C/W  
Junction to Ambient (a)  
Junction to Ambient (b)  
RθJA  
32.2  
NOTES:  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,  
in still air conditions  
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.  
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.  
ISSUE 3 - MAY 2007  
2
ZXMP3A16G  
TYPICAL CHARACTERISTICS  
RDS(on)  
Limited  
2.0  
1.6  
1.2  
0.8  
10  
1
DC  
1s  
100ms  
10ms  
100m  
10m  
1ms  
0.4  
Single Pulse  
100µs  
Tamb=25°C  
0.0  
1
10  
0
20 40 60 80  
140 160  
Temperature1(0°C0 ) 120  
-VDS Drain-Source Voltage (V)  
Derating Curve  
Safe Operating Area  
70  
60  
50  
40  
30  
20  
10  
0
T
amb=25°C  
Single Pulse  
amb=25°C  
T
100  
D=0.5  
D=0.2  
10  
Single Pulse  
D=0.05  
D=0.1  
1
100µ 1m 10m 100m  
1
100 1k  
Pulse Width (s) 10  
100µ 1m 10m 100m  
1
10 100 1k  
Pulse Width (s)  
Pulse Power Dissipation  
Transient Thermal Impedance  
ISSUE 3 - MAY 2007  
3
ZXMP3A16G  
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).  
PARAMETER  
SYMBOL  
MIN. TYP. MAX. UNIT CONDITIONS.  
STATIC  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
V(BR)DSS  
IDSS  
-30  
V
ID=-250μA, VGS=0V  
VDS=-30V, VGS=0V  
VGS=Ϯ20V, VDS=0V  
ID=-250A, VDS= VGS  
VGS=-10V, ID=-4.2A  
-1  
A  
IGSS  
100 nA  
V
Gate-Source Threshold Voltage  
VGS(th)  
-1.0  
Static Drain-Source On-State Resistance (1) RDS(on)  
0.045  
0.070  
V
GS=-4.5V, ID=-3.4A  
Forward Transconductance (1)(3)  
DYNAMIC (3)  
gfs  
9.2  
S
VDS=-15V,ID=-4.2A  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING(2) (3)  
Turn-On Delay Time  
Rise Time  
Ciss  
Coss  
Crss  
1022  
267  
pF  
pF  
pF  
V
DS=-15V, VGS=0V,  
f=1MHz  
229  
td(on)  
tr  
td(off)  
tf  
3.8  
6.5  
ns  
ns  
ns  
ns  
nC  
VDD =-15V, ID=-1A  
RG=6.0, VGS=-10V  
Turn-Off Delay Time  
Fall Time  
37.1  
21.4  
17.2  
Gate Charge  
Qg  
VDS=-15V,VGS=-5V,  
ID=-4.2A  
Total Gate Charge  
Qg  
29.6  
2.8  
nC  
nC  
nC  
V
DS=-15V,VGS=-10V,  
Gate-Source Charge  
Gate-Drain Charge  
Qgs  
Qgd  
ID=-4.2A  
8.6  
SOURCE-DRAIN DIODE  
Diode Forward Voltage (1)  
VSD  
-0.85 -0.95  
V
TJ=25ЊC, IS=-3.6A,  
V
GS=0V  
Reverse Recovery Time (3)  
Reverse Recovery Charge (3)  
trr  
21.7  
16.1  
ns  
TJ=25ЊC, IF=-2A,  
di/dt= 100A/s  
Qrr  
nC  
NOTES  
(1) Measured under pulsed conditions. Width Յ300µ s. Duty cycle Յ 2% .  
(2) Switching characteristics are independent of operating junction temperature.  
(3) For design aid only, not subject to production testing.  
ISSUE 3 - MAY 2007  
4
ZXMP3A16G  
TYPICAL CHARACTERISTICS  
10V  
4V  
4V  
3.5V  
3V  
T = 150°C  
3.5V  
T=25°C  
10V  
3V  
2.5V  
10  
1
10  
2.5V  
2V  
2V  
1
1.5V  
-VGS  
-VGS  
0.1  
0.01  
0.1  
1.5V  
0.01  
0.1  
1
10  
0.1  
1
10  
-VDS Drain-Source Voltage (V)  
-VDS Drain-Source Voltage (V)  
Output Characteristics  
Output Characteristics  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
=-10V  
10  
1
IDG=S -4.2A  
T = 150°C  
RDS(on)  
T=25°C  
VGS(th)  
V
=VDS  
IDG=S -250uA  
-VDS =10V  
0.1  
1
3
-50  
0
50  
100  
150  
-VGS Gate-2Source Voltage (V)  
Tj Junction Temperature (°C)  
Normalised Curves v Temperature  
Typical Transfer Characteristics  
100  
1.5V  
T=25°C  
100  
10  
T = 150°C  
-VGS  
10  
1
2V  
2.5V  
T=25°C  
3V  
1
3.5V  
4V  
0.1  
0.01  
0.1  
10V  
0.01  
0.0  
0.4  
0.6  
0.8  
-0V.2 Source-Drain Volta1g.e0 (V)1.2  
0.01  
0.1  
1
10  
-ID Drain Current (A)  
On-Resistance v Drain Current  
SD  
Source-Drain Diode Forward Voltage  
ISSUE 3 - MAY 2007  
5
ZXMP3A16G  
ISSUE 3 - MAY 2007  
6
ZXMP3A16G  
Definitions  
Product change  
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service.  
Customers are solely responsible for obtaining the latest relevant information before placing orders.  
Applications disclaimer  
The circuits in thisdesign/application note are offered as design ideas. It is the responsibility ofthe user toensure thatthe circuit is fitforthe user's  
application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with  
respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or  
otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence),  
breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use  
of these circuit applications, under any circumstances.  
Life support  
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written  
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body  
or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions  
for use provided in the labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Reproduction  
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in  
writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating  
to the products or services concerned.  
Terms and Conditions  
All products are sold subjects to Zetex' terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the  
terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.  
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.  
Quality of product  
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.  
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally  
authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork  
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales  
channels.  
ESD (Electrostatic discharge)  
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The  
possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage  
can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of  
being affected should be replaced.  
Green compliance  
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory  
requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of  
hazardous substances and/or emissions.  
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and  
ELV directives.  
Product status key:  
"Preview"Future device intended for production at some point. Samples may be available  
"Active"Product status recommended for new designs  
"Last time buy (LTB)"Device will be discontinued and last time buy period and delivery is in effect  
"Not recommended for new designs"Device is still in production to support existing designs and production  
"Obsolete"Production has been discontinued  
Datasheet status key:  
"Draft version"This term denotes a very early datasheet version and contains highly provisional  
information, which may change in any manner without notice.  
"Provisional version"This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to  
the test conditions and specifications may occur, at any time and without notice.  
"Issue"This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and  
without notice.  
ISSUE 3 - MAY 2007  
7
ZXMP3A16G  
PACKAGE OUTLINE  
PAD LAYOUT DETAILS  
PACKAGE DIMENSIONS  
Millimeters  
DIM  
Inches  
Millimeters  
Min Max  
2.30 BSC  
4.60 BSC  
Inches  
Min Max  
DIM  
Min  
Max  
1.80  
0.10  
0.84  
3.10  
0.33  
6.70  
Min  
Max  
A
A1  
b
-
-
0.071  
e
e1  
E
0.0905 BSC  
0.181 BSC  
0.02  
0.66  
2.90  
0.23  
6.30  
0.0008 0.004  
0.026  
0.114  
0.009  
0.248  
0.033  
0.122  
0.013  
0.264  
6.70  
7.30  
0.264  
0.130  
0.355  
-
0.287  
b2  
C
E1  
L
3.30  
0.90  
-
3.70  
0.146  
-
-
-
-
D
-
© Zetex Semiconductors plc 2007  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Kustermann-Park  
Balanstraße 59  
D-81541 München  
Germany  
Zetex Inc  
Zetex (Asia) Ltd  
Zetex Semiconductors plc  
Zetex Technology Park  
Chadderton, Oldham, OL9 9LL  
United Kingdom  
700 Veterans Memorial Hwy  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
ISSUE 3 - MAY 2007  
8
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