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UZXSC410E6TA

型号：

UZXSC410E6TA

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

12 页

PDF大小：

213 K

下载PDF手册
ZXSC410  
ZXSC420  
VOLTAGE MODE BOOST CONVERTER  
DESCRIPTION  
The ZXSC410 is voltage mode boost converter in SOT23-6 package. Its excellent  
load and line regulation means that for the full supply range from lithium Ion cells,  
the output voltage will typically change by less than 1%. Using high efficiency  
Zetex switching transistors allow output voltages of tens of volts depending on the  
selected transistor. The ZXSC420 includes a battery low indicator. This operates  
by indicating when the converter is no longer able to maintain the regulated  
output voltage rather than setting a preset threshold, thereby making it suitable for  
various battery options and load currents.  
FEATURES  
•
•
•
•
•
•
1.65V to 8V supply range  
SOT23-6  
Typical output regulation of 1%  
Over 85% typical efficiency  
Output currents up to 300mA  
4.5␮A typical shutdown current ZXSC410  
End of regulation output ZXSC420  
ORDERING INFORMATION  
DEVICE  
REEL  
S IZE  
TAPE  
QUANTITY  
PER REEL  
WIDTH  
ZXSC410E6TA  
ZXSC420E6TA  
7”  
7”  
8mm  
3000 units  
3000 units  
APPLICATIONS  
8mm  
•
•
•
System power for battery portable products  
LCD bias  
Local voltage conversion  
TYPICAL APPLICATIONS DIAGRAM  
L1  
D1  
VIN  
VOUT  
ZHCS1000  
C1  
Q1  
FMMT617  
R2  
R3  
U1  
C2  
V
DRIVE  
STDNSENSE  
GND  
CC  
V
FB  
ZXSC410  
R1  
DEVICE MARKING  
•
•
C410 ZXSC410  
C420 ZXSC420  
ISSUE 2 - May 2003  
1
S E M IC O N D U C T O R S  
ZXSC410  
ZXSC420  
ABSOLUTE MAXIMUM RATINGS  
V
-0.3V to +10V  
CC  
DRIVE  
EOR  
STDN  
-0.3V to  
-0.3V to  
V
V
+ 0.3V  
+ 0.3V  
CC  
CC  
* (ZXSC420 only)  
-0.3V to The lower of (+5.0V) or (V + 0.3V) * (ZXSC410 only)  
CC  
V
, SENSE  
-0.3V to The lower of (+5.0V) or (V + 0.3V)  
CC  
FB  
Operating Temp.  
Storage Temp.  
Power Dissipation  
-40°C to +85°C  
-55°C to +125°C  
450mW  
ELECTRICAL CHARACTERISTICS  
Test Conditions V = 3V, T= -40°C to 85°C unless otherwise stated.  
CC  
S ym b o l  
Pa ra m e t e r  
Co n d it io n s  
Lim it s  
Typ  
Un it s  
Min  
Ma x  
S u p p ly p a ra m e t e rs  
V
V
Range  
CC  
1.8  
8
V
CC  
1
Iq  
Quiescent Current  
Shutdown Current  
V
= 8V  
220  
␮A  
␮A  
CC  
I
4.5  
85  
STDN  
2
Eff  
Efficiency  
50mA > I  
> 300mA  
%
OUT  
Acc  
Reference tolerance  
Reference Temp Co  
Discharge pulse width  
Operating Frequency  
1.8V < V  
< 8V  
-3.0  
3.0  
%
REF  
CC  
TCO  
0.005  
1.7  
%/ЊC  
␮s  
REF  
DRV  
OSC  
T
F
1.8V < V  
< 8V  
CC  
200  
kHz  
In p u t p a ra m e t e rs  
V
sense voltage  
22  
-1  
28  
-7  
34  
mV  
␮A  
mV  
␮A  
V
SENSE  
I
sense input current  
Feedback voltage  
V
T
V
=0V;V  
=0V  
-15  
309  
-4.5  
SENSE  
FB  
SENSE  
SENSE  
V
= 25°C  
291  
-1.2  
1.5  
0
300  
FB  
2
A
I
Feedback input current  
Shutdown high voltage  
Shutdown low voltage  
Line voltage regulation  
=0V;V  
=0V  
FB  
FB  
V
V
1
V
IH  
IL  
CC  
0.55  
V
dV  
0.5  
%/V  
LN  
Ou t p u t p a ra m e t e rs  
3
I
I
Output current  
V
V
> 2V, V  
= V  
IN  
300  
2
mA  
mA  
V
OUT  
IN  
OUT  
Transistor drive current  
Transistor voltage drive  
Mosfet gate drive cpbty  
EOR Flag output high  
EOR Flag output low  
EOR delay time  
= 0.7V  
DRIVE  
3.4  
5
-0.4  
DRIVE  
V
C
1.8V < V  
< 8V  
0
V
DRIVE  
DRIVE  
CC  
CC  
300  
pF  
V
VOH  
I
I
= -300nA  
= 1mA  
2.5  
0
V
CC  
EOR  
EOR  
EOR  
VOL  
1.15  
250  
V
EOR  
T
T
= 25°C  
A
70  
195  
␮s  
%mA  
EOR  
dI  
Load current regulation  
0.01  
LD  
Note  
21 Excluding gate/base drive current.  
IFB is typically half of these values at 3V  
3 System not device spec, including recommended transistors.  
ISSUE 2 - May 2003  
2
S E M IC O N D U C T O R S  
ZXSC410  
ZXSC420  
TYPICAL CHARACTERISTICS  
ISSUE 2 - May 2003  
3
S E M IC O N D U C T O R S  
ZXSC410  
ZXSC420  
DEVICE DESCRIPTION  
Block Diagram s  
Bandgap Reference  
All threshold voltages and internal currents are derived  
from a temperature compensated bandgap reference  
circuit with a reference voltage of 1.22V nominal.  
VCC  
Bandgap  
Reference  
Shutdown  
STDN  
Bias Generator  
Dynam ic Drive Output  
Depending on the input signal, the output is either  
“LOW” or “HIGH”. In the high state a 2.5mA current  
source (max drive voltage = VCC-0.4V) drives the base  
or gate of the external transistor. In order to operate the  
external switching transistor at optimum efficiency,  
both output states are initiated with a short transient  
current in order to quickly discharge the base or the  
gate of the switching transistor.  
R1  
+
Comp 1  
_
R2  
R3  
Dynamic  
Drive  
Monostable  
2µs  
+
U1  
DRIVE  
Sw itching Circuit  
Comp 2  
_
The switching circuit consists of two comparators,  
Comp1 and Comp2, a gate U1, a monostable and the  
drive output. Normally the DRIVE output is “HIGH”; the  
external switching transistor is turned on. Current  
ramps up in the inductor, the switching transistor and  
external current sensing resistor. This voltage is  
GND VFB SENSE  
sensed by comparator, Comp2, at input I  
. Once  
Fig. 1 ZXSC410  
SENSE  
the current sense voltage across the sensing resistor  
exceeds 20mV, comparator Comp2 through gate U1  
triggers a re-triggerable monostable and turns off the  
output drive stage for 2µs. The inductor discharges to  
the load of the application. After 2µs a new charge cycle  
begins, thus ramping the output voltage. When the  
output voltage reaches the nominal value and V gets  
FB  
an input voltage of more than 300mV, the monostable  
is forced “on” from Comp1 through gate U1, until the  
feedback voltage falls below 300mV. The above action  
continues to maintain regulation.  
EOR, End of Regulation Detector  
The EOR circuit is a retriggerable 120µs monostable,  
which is re-triggered by every down regulating action  
of comparator Comp1. As long as regulation takes  
place, output EOR is “HIGH“ (high impedance, 100K to  
V
CC  
). Short dips of the output voltage of less than  
120µs are ignored. If the output voltage falls below the  
nominal value for more than 120µs, output EOR goes  
”LOW“. The reason for this to happen is usually a  
slowly progressing drop of input voltage from the  
discharging battery. Therefore the output voltage will  
also start to drop slowly. With the EOR detector,  
batteries can be used to the ultimate end of discharge,  
with enough time left for a safe shutdown.  
Fig. 1 ZXSC420  
ISSUE 2 - May 2003  
4
S E M IC O N D U C T O R S  
ZXSC410  
ZXSC420  
PIN DESCRIPTIONS  
Pin No .  
Na m e  
De s crip t io n  
1
2
3
4
V
Supply voltage, 1.8V to 8V.  
Ground  
CC  
GND  
STDN/EOR  
SENSE  
Shutdown ZXSC410 / End of regulation ZXSC420  
Inductor current sense input. Internal threshold voltage set to  
28mV. Connect external sense resistor.  
5
6
V
Reference voltage. Internal threshold set to 300mV. Connect  
external resistor network to set output voltage.  
FB  
DRIVE  
Drive output for external switching transistor. Connect to base or  
gate of external switching transistor.  
APPLICATIONS INFORMATION  
Inductor Selection  
Sw itching transistor selection  
The inductor value must be chosen to satisfy  
performance, cost and size requirements of the overall  
solution.  
The choice of switching transistor has a major impact  
on the converter efficiency. For optimum performance,  
a bipolar transistor with low V  
and high gain is  
CE(SAT)  
required. The V  
of the switching transistor is also an  
CEO  
important parameter as this sees the full output Inductor selection has a significant impact on the  
voltage when the transistor is switched off. Zetex converter performance. For applications where  
SuperSOT™ transistors are an ideal choice for this efficiency is critical, an inductor with a series resistance  
application.  
of 500m⍀ or less should be used.  
Schottky diode selection  
A list of recommended inductors is listed in the table  
below:  
As with the switching transistor, the Schottky rectifier  
diode has a major impact on the converter efficiency. A  
Schottky diode with a low forward voltage and fast  
recovery time should be used for this application.  
Pa rt No .  
Ma n u fa ct u re  
L
I
R
(
PK  
(A)  
DC  
)
CMD4D11-100MC Sumida  
CMD4D11-220MC Sumida  
10µH 0.5 0.457  
22µH 0.4 0.676  
10µH 1.0 0.24  
10µH 0.6 0.1  
The diode should be selected so that the maximum  
forward current rating is greater or equal to the  
maximum peak current in the inductor, and the  
maximum reverse voltage is greater or equal to the  
output voltage. The Zetex ZHCS Series meet these  
needs.  
LPO2506OB-103  
ST2006103  
Coilcraft  
Standex  
Electronics Inc  
Com bination devices  
Peak current definition  
To minimise the external component count Zetex  
recommends the ZX3CDBS1M832 combination of  
NPN transistor and Schottky diode in a 3mm x 2mm  
MLP package. This device is recommended for use in  
space critical applications.  
In general, the I value must be chosen to ensure that  
PK  
the switching transistor, Q1, is in full saturation with  
maximum output power conditions, assuming  
worse-case input voltage and transistor gain under all  
operating temperature extremes.  
The IC is also capable of driving MOSFETs. Zetex  
recommends the ZXMNS3BM832 combination of low  
threshold voltage N-Channel MOSFET and Schottky  
diode in a 3mm x 2mm MLP package. This device is  
recommended for use in space critical applications.  
Once I  
is decided the value of R  
can be  
SENSE  
PK  
determined by:  
V
SENSE  
R
=
SENSE  
I
PK  
ISSUE 2 - May 2003  
5
S E M IC O N D U C T O R S  
ZXSC410  
ZXSC420  
Sense Resistor  
A low value sense resistor is required to set the peak  
current. Power in this resistor is negligible due to the  
low sense voltage threshold, V  
. Below is a table  
SENSE  
of recommended sense resistors:  
Ma n u fa ct u re  
S e rie s  
R
(⍀)  
S ize  
To le ra n ce  
URL  
DC  
Ra n g e  
Cyntec  
IRC  
RL1220  
LR1206  
0.022 - 10  
0.010 - 1.0  
0805  
1206  
5%  
5%  
http://www.cyntec.com  
http://www.ictt.com  
Output pow er calculation  
Output capacitors  
By making the above assumptions for inductance and Output capacitors are a critical choice in the overall  
peak current the output power can be determined by: performance of the solution. They are required to filter  
the output and supply load transient currents. There  
are three parameters which are paramount in the  
selection of the output capacitors, capacitance, I  
P
= I x V x ␩ = (Watts)  
OUT  
AV IN  
RIPPLE  
and ESR. The capacitance value is selected to meet the  
load transient requirements. The capacitors I  
rating must meet or exceed the current ripple of the  
solution.  
where  
I
RIPPLE  
(TON+TDIS  
(TON+TOFF  
)
IAV  
=
PK X  
2
)
The ESR of the output capacitor can also affect loop  
stability and transient performance. The capacitors  
selected for the solutions, and indicated in the  
reference designs, are optimised to provide the best  
overall performance.  
and  
TON  
IPK x L  
=
=
V
IN  
Input capacitors  
and  
TDIS  
The input capacitor is chosen for its voltage and RMS  
current rating. The use of low ESR electrolitic or  
tantalum capacitors is recommended. Capacitor  
values for optimum performance are suggested in the  
reference design section  
IPK x L  
VOUT - V  
IN  
and  
Also note that the ESR of the input capcitor is  
T
1.7µs (internally set by ZXSC410)  
OFF  
effectively in series with the input and hence  
2
contributes to efficiency losses in the order of I  
ESR.  
.
RMS  
and  
␩ = efficiency i.e. 100% = 1  
Operating frequency can be derived by:  
1
F=  
T
ON + TOFF  
ISSUE 2 - May 2003  
6
S E M IC O N D U C T O R S  
ZXSC410  
ZXSC420  
Output voltage adjustm ent  
Layout issues  
The ZXSC410/420 are adjustable output converters Layout is critical for the circuit to function in the most  
allowing the end user the maximum flexibilty. For efficient manner in terms of electrical efficiency,  
adjustable operation a potential divider network is thermal considerations and noise.  
connected as follows:  
For ‘step-up converters’ there are four main current  
loops, the input loop, power-switch loop, rectifier loop  
and output loop. The supply charging the input  
capacitor forms the input loop. The power-switch loop  
V
OUT  
is defined when Q1 is ‘on’, current flows from the input  
through the inductor, Q1, R  
and to ground. When  
SENSE  
Q1 is ‘off’, the energy stored in the inductor is  
transferred to the output capacitor and load via D1,  
forming the rectifier loop. The output loop is formed by  
the output capacitor supplying the load when Q1 is  
switched back off.  
R
A
B
V
FB  
R
To optimise for best performance each of these loops  
kept separate from each other and interconnected with  
short, thick traces thus minimising parasitic  
inductance, capacitance and resistance. Also the  
R
resistor should be connected, with minimum  
SENSE  
GND  
trace length, between emitter lead of Q1 and ground,  
again minimising stray parasitics.  
The output voltage is determined by the equation:  
RA  
VOUT = V  
1+  
FB  
RB  
where VFB=300mV  
The resistor values, RA and RB, should be maximised  
to improve efficiency and decrease battery drain.  
Optimisation can be achieved by providing a minimum  
current of I  
=200nA to the V pin. Output is  
FB  
FB  
FB(MAX)  
adjustable from V to the (BR)VCEO of the switching  
transistor, Q1.  
Note: For the reference designs, RA is assigned the  
label R2 and RB the label R3.  
CONNECTION DIAGRAMS  
ZXSC410  
ZXSC420  
SOT23-6  
SOT23-6  
V
CC  
DRIVE  
V
DRIVE  
CC  
GND  
V
GND  
EOR  
V
FB  
FB  
SENSE  
STDN  
SENSE  
ISSUE 2 - May 2003  
7
S E M IC O N D U C T O R S  
ZXSC410  
ZXSC420  
REFERENCE DESIGNS  
ZXSC410 DC-DC Controller  
V
V
=2.5V to 4.2V  
OUT  
IN  
=5V; I  
=100mA  
LOAD  
Bill of Materials  
Ref  
U1  
U2  
L1  
Va lu e  
Pa rt Nu m b e r  
Ma n u fa ct u re  
Co m m e n t s  
ZXSC410E6  
Zetex  
DC-DC converter IC  
Low sat NPN + 1A Schottky  
1mm height profile  
1206 / 0805 size  
0603 size  
ZX3CDBS1M832 Zetex  
22µH  
CMD4D11-220  
Sumida  
R1  
R2  
R3  
C1  
C2  
C3  
100mΩ  
16kΩ  
LR1206 / RL1220 IRC / Cyntec  
Generic  
Generic  
Generic  
Murata  
Murata  
Generic  
Generic  
0603 size  
1kΩ  
22µF/6V3  
22µF/6V3  
1nF  
GRM Series  
GRM Series  
Generic  
1206 size  
1206 size  
0603 size  
ISSUE 2 - May 2003  
8
S E M IC O N D U C T O R S  
ZXSC410  
ZXSC420  
Perform ance Graphs  
V=50mV/DIV; T=10µS/DIV  
V=1V/DIV; T=10µS/DIV  
Output Ripple  
Sw itching Waveform  
ISSUE 2 - May 2003  
9
S E M IC O N D U C T O R S  
ZXSC410  
ZXSC420  
ZXSC410 as Triple Output TFT Bias  
A
=9V/180mA  
VDD  
V
V
=18V/10mA  
ON  
OFF  
=9V/10mA  
ZXSC410 as Triple Output TFT Bias  
A
=9V/180mA  
VDD  
V
V
=27V/10mA  
ON  
OFF  
=9V/10mA  
ISSUE 2 - May 2003  
10  
S E M IC O N D U C T O R S  
ZXSC410  
ZXSC420  
Sequencing A  
and V  
ON  
VDD  
By adding the circuit below to the LCD bias output (V ) of The delay is set by the RC time constant of R1 and C1.  
ON  
the converter a 10ms delay can be achieved between The diode, D1, discharges the gate of the PMOS when  
A
VDD  
power up and V power up. The circuit operates by the main system supply is turned off, guaranteeing a  
ON  
a delay in turning the PMOS transistor on, which transfers delay every turn on cycle.  
to a 10ms delay between input and output of the circuit.  
ISSUE 2 - May 2003  
11  
S E M IC O N D U C T O R S  
ZXSC410  
ZXSC420  
PACKAGE OUTLINE  
PAD LAYOUT DETAILS  
b
e
2
L
E1  
E
DATUM A  
a
e1  
D
A
A2  
A1  
CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES.  
PACKAGE DIMENSIONS  
Millimetres  
Inches  
Min  
Millimetres  
Inches  
DIM  
DIM  
Min  
0.90  
0.00  
0.90  
0.35  
0.09  
2.80  
Max  
1.45  
0.15  
1.30  
0.50  
0.20  
3.00  
Max  
0.057  
0.006  
0.051  
0.019  
Min  
2.60  
1.50  
0.10  
Max  
3.00  
1.75  
0.60  
Min  
Max  
0.118  
0.069  
0.002  
A
A1  
A2  
b
0.35  
0
E
E1  
L
0.102  
0.059  
0.004  
0.035  
0.014  
e
0.95 REF  
1.90 REF  
0° 10°  
0.037 REF  
0.074 REF  
0° 10°  
C
0.0035 0.008  
0.110 0.118  
e1  
L
D
© Zetex plc 2003  
Europe  
Am ericas  
Asia Pacific  
Zetex plc  
Fields New Road  
Chadderton  
Oldham, OL9 8NP  
United Kingdom  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
Zetex GmbH  
Streitfeldstraße 19  
D-81673 München  
Zetex Inc  
700 Veterans Memorial Hwy  
Hauppauge, NY 11788  
Zetex (Asia) Ltd  
3701-04 Metroplaza Tower 1  
Hing Fong Road  
Kwai Fong  
Hong Kong  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Germany  
USA  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
These offices are supported by agents and distributors in major countries world-wide.  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product information, log on to w w w .zetex.com  
ISSUE 2 - May 2003  
12  
S E M IC O N D U C T O R S  
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 		UZX5T849GTC [ Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T853GTA [ Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T853GTC [ Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

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