IXA4IF1200TC
preliminary
Ratings
IGBT
Symbol
VCES
Definition
collector emitter voltage
Conditions
min. typ. max. Unit
TVJ
=
25°C
1200
±20
±30
9
V
V
V
A
A
W
V
V
V
max. DC gate voltage
VGES
VGEM
IC25
max. transient gate emitter voltage
collector current
TC = 25°C
TC = 100°C
TC = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
IC
5
100
total power dissipation
P
tot
45
collector emitter saturation voltage
VCE(sat)
IC =
3A; V = 15 V
1.8
2.1
5.9
2.1
GE
gate emitter threshold voltage
collector emitter leakage current
VGE(th)
ICES
IC = 0.1mA; VGE = VCE
5.4
6.5
VCE = VCES; V = 0 V
0.1 mA
mA
GE
0.1
gate emitter leakage current
total gate charge
IGES
VGE = ±20 V
500
nA
nC
ns
QG(on)
td(on)
tr
VCE = 600 V; V = 15 V; IC =
3 A
12
70
GE
turn-on delay time
current rise time
40
ns
inductive load
TVJ = 125°C
turn-off delay time
td(off)
t f
250
100
0.4
0.3
ns
VCE
=
600V; IC =
3A
current fall time
ns
VGE = ±15 V; RG=330 Ω
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
Eon
mJ
mJ
Eoff
RBSOA
ICM
VGE = ±15 V; RG=330 Ω
VCEmax = 1200V
TVJ = 125°C
TVJ = 125°C
A
9
short circuit safe operating area
short circuit duration
SCSOA
tSC
VCEmax = 900V
VCE = 900V; VGE = ±15 V
RG =330Ω; non-repetitive
10
µs
A
short circuit current
ISC
12
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
2.7 K/W
K/W
0.15
Diode
VRRM
IF25
max. repetitive reverse voltage
forward current
TVJ = 25°C
TC = 25°C
TC = 100°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
1200
V
A
10
6
IF100
VF
A
forward voltage
IF =
3A
2.20
V
1.90
V
reverse current
IR
VR = VRRM
*
mA
mA
µC
A
* not applicable, see Ices value above
reverse recovery charge
*
0.5
5
Qrr
VR = 600 V
max. reverse recovery current
reverse recovery time
IRM
-diF /dt = -150 A/µs
TVJ = 125°C
trr
350
0.1
ns
mJ
IF =
3A; V = 0 V
GE
reverse recovery energy
Erec
RthJC
RthCH
thermal resistance junction to case
thermal resistance case to heatsink
3 K/W
K/W
0.15
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20111109a
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