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IXFN44N50QD3

型号：

IXFN44N50QD3

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

537 K

下载PDF手册
VDSS  
ID (cont)  
RDS(on)  
trr  
HiPerFETTM  
500 V  
500 V  
44 A  
48 A  
0.12 Ω 35 ns  
0.10 Ω 35 ns  
IXFN44N50QD2 IXFN44N50QD3  
IXFN48N50QD2 IXFN48N50QD3  
Power MOSFETs  
3
3
D2  
D3  
Buck & Boost Configurations for  
PFC & Motor Control Circuits  
4
PreliminaryDataSheet  
2
2
4
1
1
Symbol  
TestConditions  
Maximum Ratings  
miniBLOC, SOT-227 B  
VDSS  
VDGR  
TJ  
TJ  
= 25°C to 150°C  
= 25°C to 150°C; RGS = 1 MΩ  
500  
500  
V
V
1
2
VGS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
ID25  
TC  
= 25°C  
44N50  
48N50  
44  
48  
A
A
4
3
IDM  
TC  
= 25°C,  
44N50  
48N50  
176  
192  
48  
60  
15  
A
A
A
Features  
pulse width limited by max. TJM  
• Popular Buck & Boost circuit  
topologies  
IAR  
TC  
= 25°C  
• International standard package  
miniBLOC SOT-227B  
EAR  
Repetitive  
mJ  
• Aluminium nitride isolation  
- high power dissipation  
dv/dt  
IS ≤ IDM, -di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
,
V/ns  
• Isolation voltage 3000 V~  
• Low RDS (on) HDMOSTM process  
PD  
TC  
= 25°C  
500  
600  
W
V
• Rugged polysilicon gate cell structure  
• Low drain-to-case capacitance  
(<60 pF)  
VRRM  
IFAVM  
IFRM  
Tc  
= 70°C; rectangular, d = 0.5  
60  
A
A
- reduced RFI  
• Ultra-fast FRED diode with soft  
reverse recovery  
tp <10 µs; pulse width limited by TJ  
800  
PD  
TC = 25°C  
180  
W
Applications  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
• Power factor controls and buck  
regulators  
• DC servo and robotic drives  
• DC choppers  
• Switch reluctance motor controls  
VISOL  
50/60 Hz, RMS t = 1 min  
ISOL ≤ 1 mA t = 1 s  
2500  
3000  
V~  
V~  
I
Advantages  
Md  
Mounting torque  
Terminal connection torque (M4)  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
• Easy to mount with 2 screws  
• Space savings  
Weight  
30  
g
• Tightly coupled FRED  
© 2003 IXYS All rights reserved  
DS99072(7/03)  
IXFN44N50QD2 IXFN48N50QD2  
IXFN44N50QD3 IXFN48N50QD3  
Symbol  
TestConditions  
Characteristic Values  
Dimensions  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VDSS  
VGS(th)  
VGS = 0 V, ID = 1 mA  
VDS = VGS, ID = 8 mA  
500  
2
V
V
4
IGSS  
IDSS  
VGS = 20 VDC, VDS = 0  
VDS = 0.8 VDSS  
200  
nA  
T = 25°C  
400  
2
µA  
VGS = 0 V  
TJJ = 125°C  
mA  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
44N50  
48N50  
0.12  
0.10  
Ω
Ω
Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 %  
M4 screws (4x) supplied  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Dim.  
Millimeter  
Inches  
VDS = 10 V, ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
30  
42  
S
Min.  
Max.  
Min.  
Max.  
A
B
31.5  
7.8  
31.88  
8.2  
1.240  
0.307  
1.255  
0.323  
Ciss  
Coss  
Crss  
7000  
960  
230  
pF  
pF  
pF  
C
4.09  
4.29  
0.161  
0.169  
D
4.09  
4.29  
0.161  
0.169  
E
F
4.09  
4.29  
0.161  
0.587  
0.169  
0.595  
14.91  
15.11  
td(on)  
tr  
td(off)  
tf  
33  
22  
75  
10  
ns  
ns  
ns  
ns  
G
30.1  
30.3  
1.186  
1.193  
H
38.0  
38.2  
1.497  
1.505  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
RG = 1 Ω (External)  
J
11.7  
8.9  
12.2  
9.6  
0.460  
0.351  
0.481  
0.378  
K
L
0.75  
0.85  
0.030  
0.033  
M
12.6  
12.8  
0.496  
0.506  
N
25.2  
1.98  
4.95  
25.4  
2.13  
6.0  
0.990  
0.078  
0.195  
1.001  
0.084  
0.235  
Qg(on)  
Qgs  
Qgd  
190  
40  
86  
nC  
nC  
nC  
O
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
P
RthJC  
RthCK  
0.26  
K/W  
K/W  
0.05  
Ultra-fast Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
IR  
TestConditions  
TJ= 25°C; VR= VRRM  
VR= 0.8VRRM  
200  
100  
µA  
µA  
TJ= 125°C; VR= 0.8VRRM  
14 mA  
VF  
IF = 70A, VGS = 0 V, TJ= 150°C  
Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 % TJ= 25°C  
1.5  
1.8  
V
V
trr  
IRM  
II = 1A, di/dt = -200 A/µs, VR = 30 V, TJ = 25°C  
IF= 60A, di/dt = -480 A/µs, VR = 350 V, TJ = 100°C  
35  
19  
50  
21  
ns  
A
RthJC  
RthJK  
0.7 K/W  
K/W  
0.05  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXFN44N50QD2 IXFN48N50QD2  
IXFN44N50QD3 IXFN48N50QD3  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
48  
42  
36  
30  
24  
18  
12  
6
120  
VGS = 10V  
VGS = 10V  
7V  
8V  
7V  
90  
6V  
5V  
60  
6V  
30  
5V  
0
0
0
0
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10 12 14 16 18 20  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. RDS(on) Normalized to ID25 Value vs.  
Junction Temperature  
48  
42  
36  
30  
24  
18  
12  
6
2.8  
2.6  
2.4  
2.2  
2
VGS = 10V  
VGS = 10V  
7V  
6V  
1.8  
1.6  
1.4  
1.2  
1
ID = 48A  
ID = 24A  
5V  
0.8  
0.6  
0.4  
0
2
4
6
8
10  
12  
14  
16  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID25  
Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
54  
48  
42  
36  
30  
24  
18  
12  
6
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0.7  
0
12 24 36 48 60 72 84 96 108 120  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2003 IXYS All rights reserved  
IXFN44N50QD2 IXFN48N50QD2  
IXFN44N50QD3 IXFN48N50QD3  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
80  
60  
54  
48  
42  
36  
30  
24  
18  
12  
6
70  
60  
TJ = -40ºC  
50  
25ºC  
125ºC  
40  
30  
20  
10  
0
TJ = 125ºC  
25ºC  
-40ºC  
0
3.5  
4
4.5  
5
5.5  
6
6.5  
0
6
12 18 24 30 36 42 48 54 60  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs. Source-To-  
Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 250V  
ID = 24A  
G = 10mA  
I
TJ = 125ºC  
TJ = 25ºC  
0.3 0.4 0.5 0.6 0.7 0.8 0.9  
1
1.1 1.2  
0
20 40 60 80 100 120 140 160 180 200  
Q G - nanoCoulombs  
VS D - Volts  
Fig. 12. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
10000  
1000  
100  
1
f = 1MHz  
C
iss  
C
C
oss  
rss  
30  
0.1  
0.01  
0
5
10  
15  
20  
25  
35  
40  
1
10  
100  
1000  
VD S - Volts  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXFN44N50QD2 IXFN48N50QD2  
IXFN44N50QD3 IXFN48N50QD3  
160  
A
140  
4000  
nC  
80  
A
120  
100  
80  
60  
40  
20  
0
3000  
2000  
1000  
0
60  
IF  
IRM  
Qr  
40  
20  
0
A/µs  
-diF/dt  
0
1
2
V
100  
1000  
0
200 400 600 1000  
A/µs  
-diF/dt  
VF  
2.0  
1.5  
140  
20  
V
4
µs  
ns  
130  
VFR  
tfr  
trr  
15  
10  
5
3
2
1
0
Kf  
120  
110  
100  
90  
1.0  
0.5  
0.0  
80  
0
A/µs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
°C  
A/µs  
diF/dt  
TVJ  
-diF/dt  
1
K/W  
0.1  
ZthJC  
0.01  
0.001  
DSEP 60-06A  
0.0001  
s
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t
© 2003 IXYS All rights reserved  
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