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IXFP72N30X3M

型号：

IXFP72N30X3M

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

141 K

下载PDF手册
Advance Technical Information  
X3-Class HiPerFETTM  
Power MOSFET  
VDSS = 300V  
ID25 = 72A  
RDS(on) 19m  
IXFP72N30X3M  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
OVERMOLDED  
TO-220  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
300  
300  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
G
D
S
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G = Gate  
S = Source  
D = Drain  
ID25  
IDM  
TC = 25C, Limited by TJM  
TC = 25C, Pulse Width Limited by TJM  
72  
A
A
150  
IA  
TC = 25C  
TC = 25C  
36  
1
A
J
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
20  
36  
V/ns  
W
Features  
International Standard Package  
Plastic Overmolded Tab  
Low RDS(ON) and QG  
Avalanche Rated  
Low Package Inductance  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting Torque  
1.13 / 10  
2.5  
Nm/lb.in  
g
Weight  
High Power Density  
Easy to Mount  
Space Savings  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1.5mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
300  
V
V
2.5  
4.5  
100 nA  
IDSS  
5 A  
TJ = 125C  
750 A  
RDS(on)  
VGS = 10V, ID = 36A, Note 1  
15  
19 m  
DS100854A(7/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFP72N30X3M  
Symbol  
Test Conditions  
Characteristic Values  
OVERMOLDED TO-220  
(IXFP...M)  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 36A, Note 1  
Gate Input Resistance  
36  
60  
S
RGi  
1.7  
Ciss  
Coss  
Crss  
5400  
800  
2
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
1
2
3
Effective Output Capacitance  
Co(er)  
Co(tr)  
310  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
DS = 0.8 • VDSS  
V
1200  
td(on)  
tr  
td(off)  
tf  
22  
25  
86  
11  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 36A  
V
RG = 5(External)  
Qg(on)  
Qgs  
82  
25  
25  
nC  
nC  
nC  
Terminals: 1 - Gate  
2 - Drain  
VGS = 10V, VDS = 0.5 • VDSS, ID = 36A  
3 - Source  
Qgd  
RthJC  
RthCS  
3.5 C/W  
C/W  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
72  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
288  
1.4  
V
trr  
QRM  
IRM  
100  
750  
15  
ns  
IF = 36A, -di/dt = 100A/μs  
nC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFP72N30X3M  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
250  
200  
150  
100  
50  
V
= 10V  
GS  
V
= 10V  
9V  
GS  
9V  
8V  
7V  
6V  
8V  
7V  
6V  
5V  
5V  
0
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 36A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
6V  
I
= 72A  
D
I
= 36A  
D
5V  
4V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.5  
1
1.5  
2
2.5  
3
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 36A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
V
= 10V  
GS  
BV  
DSS  
T
= 125oC  
J
T
J
= 25oC  
V
GS(th)  
50  
100  
150  
200  
250  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFP72N30X3M  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
120  
100  
80  
60  
40  
20  
0
140  
120  
100  
80  
T
J
= - 40oC  
V
= 10V  
DS  
V
= 10V  
DS  
25oC  
125oC  
60  
T
J
= 125oC  
25oC  
40  
- 40oC  
20  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
0
0
0
20  
40  
60  
80  
100  
120  
140  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
10  
8
250  
200  
150  
100  
50  
V
= 150V  
DS  
I
I
= 36A  
D
G
= 10mA  
6
4
T
J
= 125oC  
2
T
J
= 25oC  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
1.4  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Output Capacitance Stored Energy  
14  
12  
10  
8
100,000  
10,000  
1,000  
100  
C
iss  
C
C
oss  
rss  
6
4
10  
2
= 1 MHz  
f
1
0
1
10  
100  
1000  
50  
100  
150  
200  
250  
300  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFP72N30X3M  
Fig. 14. Maximum Transient Thermal Impedance  
Fig. 13. Forward-Bias Safe Operating Area  
10  
1
1000  
100  
10  
R
DS(  
on  
Limit  
)
25μs  
0.1  
100μs  
0.01  
0.001  
1
T
= 150oC  
= 25oC  
J
T
C
1ms  
Single Pulse  
10ms  
100ms  
DC  
100  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1
10  
1,000  
Pulse Width - Seconds  
VDS - Volts  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_72N30X3(25-S301) 7-18-17  
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