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IXFX32N80Q3

型号：

IXFX32N80Q3

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

125 K

下载PDF手册
HiperFETTM  
Power MOSFET  
Q3-Class  
VDSS = 800V  
ID25 = 32A  
RDS(on) 270m  
IXFK32N80Q3  
IXFX32N80Q3  
trr  
300ns  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXFK)  
Fast Intrinsic Rectifier  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
S
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
800  
800  
V
V
VDGR  
Tab  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
PLUS247 (IXFX)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
32  
A
A
80  
IA  
EAS  
TC = 25C  
TC = 25C  
32  
3
A
J
G
D
S
Tab  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
50  
V/ns  
W
1000  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Low Intrinsic Gate Resistance  
Low Package Inductance  
Fast Intrinsic Rectifier  
Low RDS(on) and QG  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C Unless Otherwise Specified)  
Min.  
800  
3.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
V
V
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
VDS = VGS, ID = 4mA  
VGS = 30V, VDS = 0V  
VDS = 0.8 • VDSS, VGS = 0V  
6.0  
200 nA  
Power Supplies  
DC Choppers  
Temperature and Lighting Controls  
IDSS  
50 A  
2 mA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
270 m  
DS100361B(01/14)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXFK32N80Q3  
IXFX32N80Q3  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 AA Outline  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
16  
26  
S
Ciss  
Coss  
Crss  
6940  
700  
63  
pF  
pF  
pF  
RGi  
0.16  
38  
: 1 - Gate  
2 - Drain  
td(on)  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1(External)  
3 - Source  
4 - Drain  
tr  
13  
45  
ns  
ns  
Dim.  
Millimeter  
Inches  
td(off)  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
tf  
10  
ns  
Qg(on)  
Qgs  
140  
48  
nC  
nC  
nC  
b
b1  
b2  
c
D
E
e
J
1.12  
2.39  
2.90  
0.53  
25.91 26.16  
19.81 19.96  
5.46 BSC  
0.00  
0.00  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.021  
1.020  
.780  
.215 BSC  
.000  
.000  
.056  
.106  
.122  
.033  
1.030  
.786  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
0.83  
Qgd  
63  
RthJC  
RthCS  
0.125C/W  
C/W  
0.25  
0.25  
.010  
.010  
0.15  
K
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
Source-Drain Diode  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
PLUS247TM Outline  
IS  
VGS = 0V  
32  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
128  
1.4  
trr  
QRM  
IRM  
300 ns  
C  
IF = 16A, -di/dt = 100A/s  
1.4  
12.0  
VR = 100V, VGS = 0V  
A
Note  
1. Pulse test, t 300s, duty cycle, d 2%.  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFK32N80Q3  
IXFX32N80Q3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
32  
28  
24  
20  
16  
12  
8
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
9V  
GS  
V
= 10V  
9V  
GS  
8V  
7V  
8V  
7V  
4
0
0
5
10  
15  
20  
25  
30  
0
1
2
3
4
5
6
7
8
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 16A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
32  
28  
24  
20  
16  
12  
8
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
I
= 32A  
D
I
= 16A  
D
7V  
6V  
4
0
0
2
4
6
8
10  
12  
14  
16  
18  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 16A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
GS  
T = 125ºC  
J
T = 25ºC  
J
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
40  
50  
60  
70  
80  
ID - Amperes  
TC - Degrees Centigrade  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXFK32N80Q3  
IXFX32N80Q3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
60  
50  
40  
30  
20  
10  
0
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T
= - 40ºC  
J
25ºC  
125ºC  
T
J
= 125ºC  
25ºC  
- 40ºC  
0
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
9
9.5  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
16  
14  
12  
10  
8
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 400V  
DS  
I
I
= 16A  
D
G
= 10mA  
6
T
J
= 125ºC  
T
J
= 25ºC  
4
2
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
50  
100  
150  
200  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100  
100,000  
10,000  
1,000  
100  
R
Limit  
DS(on)  
= 1 MHz  
f
C
iss  
25µs  
100µs  
10  
C
C
oss  
rss  
T
J
= 150ºC  
= 25ºC  
T
C
1ms  
Single Pulse  
10  
1
0
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFK32N80Q3  
IXFX32N80Q3  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_32N80Q3(R8)7-13-11  
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