UPS360e3
3 A Schottky Barrier Rectifier
KEY FEATURES
DESCRIPTION
This UPS360e3 in the Powermite3® package is a high efficiency Schottky rectifier
that is also RoHS compliant offering high current/power capabilities previously
found only in much larger packages. They are ideal for SMD applications that
operate at high frequencies. In addition to its size advantages, the Powermite3®
package includes a full metallic bottom that eliminates the possibility of solder flux
entrapment during assembly and a unique locking tab act as an efficient heat path to
the heat-sink mounting. Its innovative design makes this device ideal for use with
automatic insertion equipment.
Very low thermal resistance package
RoHS Compliant with e3 suffix part number
Guard-ring-die construction for transient
protection
Efficient heat path with Integral locking bottom
metal tab
Low forward voltage
Full metallic bottom eliminates flux entrapment
Compatible with automatic insertion
Low profile-maximum height of 1mm
Options for screening in accordance with MIL-
PRF-19500 for JAN, JANTX, JANTXV, and
JANS are available by adding MQ, MX, MV, or
MSP prefixes respectively to part numbers.
For example, designate MXUPS360e3 for a
JANTX (consult factory for Tin-Lead plating).
Optional 100% avionics screening available by
adding MA prefix for 100% temperature cycle,
thermal impedance and 24 hours HTRB
(consult factory for Tin-Lead plating)
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
60
V
APPLICATIONS/BENEFITS
RMS Reverse Voltage
42
3
V
A
V R (RMS)
Io
Switching and Regulating Power Supplies.
Silicon Schottky (hot carrier) rectifier for
minimal reverse voltage recovery
Elimination of reverse-recovery oscillations
to reduce need for EMI filtering
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on Rated Load
100 @ 25ºC
50 @ 100ºC
A
IFSM
Charge Pump Circuits
Reduces reverse recovery loss with low IRM
Storage Temperature
Junction Temperature
TSTG
TJ
-55 to +150
-55 to +125
ºC
ºC
Small foot print
THERMAL CHARACTERISTICS
190 X 270 mils (1:1 Actual size)
See mounting pad details on pg 3
Thermal Resistance
MECHANICAL & PACKAGING
Junction-to-case (bottom)
Junction to ambient (1)
(1) When mounted on FR-4 PC board using 2 oz copper with recommended minimum foot print
RθJC
RθJA
3.2
65
ºC/ Watt
ºC/ Watt
• CASE: Void-free transfer molded
thermosetting epoxy compound meeting
UL94V-0
• FINISH: Annealed matte-Tin plating over
copper and readily solderable per MIL-
STD-750 method 2026 (consult factory for
Tin-Lead plating)
Powermite 3™
• POLARITY: See figure (left)
• MARKING: S360•
• WEIGHT: 0.072 gram (approx.)
• Package dimension on last page
• Tape & Reel option: 16 mm tape per
Standard EIA-481-B, 5000 on 13” reel
Copyright © 2005
5-19-05 Rev A
Microsemi
Page 1
