UPS560e3
5 A Schottky Barrier Rectifier
KEY FEATURES
DESCRIPTION
This UPS560e3 in the Powermite3® package is a high efficiency Schottky
rectifier that is also RoHS compliant offering high current/power capabilities
previously found only in much larger packages. They are ideal for SMD
applications that operate at high frequencies. In addition to its size
advantages, the Powermite3® package includes a full metallic bottom that
eliminates the possibility of solder flux entrapment during assembly and a
unique locking tab act as an efficient heat path to the heat-sink mounting.
Its innovative design makes this device ideal for use with automatic insertion
equipment.
Very low thermal resistance package
RoHS Compliant with e3 suffix part
number
Guard-ring-die construction for transient
protection
Efficient heat path with Integral locking
bottom metal tab
Low forward voltage
Full metallic bottom eliminates flux
entrapment
Compatible with automatic insertion
Low profile-maximum height of 1mm
Options for screening in accordance with
MIL-PRF-19500 for JAN, JANTX, and
JANTXV are available by adding MQ, MX,
or MV prefixes respectively to part
numbers. For example, designate
MXUPS560e3 for a JANTX (consult
factory for Tin-Lead plating).
Optional 100% avionics screening
available by adding MA prefix for 100%
temperature cycle, thermal impedance
and 24 hours HTRB (consult factory for
Tin-Lead plating)
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
60
V
RMS Reverse Voltage
42
5
V
A
V R (RMS)
Io
Average Rectified Output Current
APPLICATIONS/BENEFITS
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on Rated Load@ Tc =90 ºC
100
A
IFSM
Switching and Regulating Power
Supplies.
Silicon Schottky (hot carrier) rectifier for
minimal reverse voltage recovery
Elimination of reverse-recovery
oscillations to reduce need for EMI
filtering
Storage Temperature
Junction Temperature
TSTG
TJ
-55 to +150
-55 to +125
ºC
ºC
THERMAL CHARACTERISTICS
Charge Pump Circuits
Reduces reverse recovery loss with low
IRM
Thermal Resistance
Junction-to-case (bottom)
Junction to ambient (1)
RθJC
RθJA
3.2
65
ºC/ Watt
ºC/ Watt
(1) When mounted on FR-4 PC board using 2 oz copper with recommended minimum foot print
Small foot print
190 X 270 mils (1:1 Actual size)
See mounting pad details on pg 3
Powermite 3™
MECHANICAL & PACKAGING
•
•
CASE: Void-free transfer molded
thermosetting epoxy compound meeting
UL94V-0
FINISH: Annealed matte-Tin plating over
copper and readily solderable per MIL-
STD-750 method 2026 (consult factory
for Tin-Lead plating)
•
•
•
•
•
POLARITY: See figure (left)
MARKING: S560•
WEIGHT: 0.072 gram (approx.)
Package dimension on last page
Tape & Reel option: 16 mm tape per
Standard EIA-481-B, 5000 on 13” reel
Note: 1 Short duration test pulse used to minimize self – heating effect.
Copyright © 2007
6-26-2007 REV D
Microsemi
Page 1
