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IXSP10N60B2D1

型号：

IXSP10N60B2D1

描述：

高速IGBT与二极管[ High Speed IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

589 K

下载PDF手册
High Speed IGBT  
with Diode  
IXSA 10N60B2D1  
IXSP 10N60B2D1  
VCES = 600 V  
IC25 = 20 A  
VCE(sat) = 2.5 V  
Short Circuit SOA Capability  
PreliminaryDataSheet  
D1  
Symbol  
TestConditions  
MaximumRatings  
TO-263 (IXSA)  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
E
C (TAB)  
IC25  
TC = 25°C  
20  
10  
11  
30  
A
A
A
A
TO-220AB (IXSP)  
IC110  
IF(110)  
ICM  
TC = 110°C  
TC = 25°C, 1 ms  
SSOA  
(RBSOA)  
V
= 15 V, TJ = 125°C, RG = 82Ω  
ICM = 20  
A
µs  
W
CGlaEmped inductive load, VGE = 20 V  
@ 0.8 VCES  
C (TAB)  
G
tSC  
(SCSOA)  
V
= 15 V, V = 360 V, T = 125°C  
10  
C
RGGE = 150 Ω, CnEon repetitivJe  
TC = 25°C  
E
PC  
100  
G = Gate  
E = Emitter  
C = Collector  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
• International standard packages  
• Guaranteed Short Circuit SOA  
capability  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Plastic Body  
t = 10s  
250  
°C  
• Low VCE(sat)  
Md  
Mounting torque  
(TO-220) 1.3/10 Nm/lb. in  
- for low on-state conduction losses  
• Highcurrenthandlingcapability  
• MOS Gate turn-on  
- drivesimplicity  
• Fast fall time for switching speeds  
up to 20 kHz  
Weight  
2
g
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
• AC motor speed control  
• Uninterruptiblepowersupplies(UPS)  
• Welding  
VGE(th)  
ICES  
IC = 750 µA, VCE = VGE  
4.0  
7.0  
V
VCE = VCES  
VGE = 0 V  
75  
200  
µA  
µA  
Advantages  
• High power density  
IGES  
VCE = 0 V, VGE  
=
20 V  
100  
2.5  
nA  
V
VCE(sat)  
IC = 10A, VGE = 15 V  
DS99193A(10/04)  
© 2004 IXYS All rights reserved  
IXSA 10N60B2D1  
IXSP 10N60B2D1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
TO-220 AB (IXSP) Outline  
(TJ = 25°C, unless otherwise specified)  
min.  
typ.  
max.  
IC = 10A; VCE = 10 V, Note 1  
2.0  
3.6  
S
Cies  
Coes  
Cres  
400  
50  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V  
f = 1 MHz  
11  
Qg  
17  
6
nC  
nC  
nC  
Qge  
Qgc  
IC = 10A, VGE = 15 V, VCE = 0.5 VCES  
7.5  
Dim.  
Millimeter  
Min. Max.  
12.70 13.97 0.500 0.550  
14.73 16.00 0.580 0.630  
Inches  
Min. Max.  
td(on)  
tri  
td(off)  
tfi  
30  
30  
ns  
ns  
ns  
ns  
Inductive load, TJ = 25°C  
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
IC = 10A, VGE = 15 V  
V
= 0.8 V , RG = 30 Ω  
180  
165  
430  
SCwEitching tiCmESes may increase for VCE  
(Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
9.91 10.66 0.390 0.420  
3.54  
4.08 0.139 0.161  
5.85  
2.54  
6.85 0.230 0.270  
3.18 0.100 0.125  
Eoff  
750 µJ  
1.15  
2.79  
1.65 0.045 0.065  
5.84 0.110 0.230  
td(on)  
tri  
30  
30  
ns  
ns  
mJ  
ns  
ns  
µJ  
0.64  
2.54  
1.01 0.025 0.040  
BSC 0.100  
BSC  
Inductive load, TJ = 125°C  
Eon  
td(off)  
tfi  
0.32  
260  
270  
790  
4.32  
1.14  
4.82 0.170 0.190  
1.39 0.045 0.055  
IC = 10 A, VGE = 15 V  
V
CE = 0.8 VCES, RG = 30 Ω  
0.35  
2.29  
0.56 0.014 0.022  
2.79 0.090 0.110  
Switching times may increase for  
VCE (Clamp) > 0.8 • VCES, higher TJ  
or increased RG  
Eoff  
TO-263 (IXSA) Outline  
RthJC  
RthCS  
1.25 K/W  
K/W  
TO-220  
0.25  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = 10A, VGE = 0 V  
TJ =150°C  
1.66  
2.66  
V
V
A
IRM  
trr  
IF = 12A, V = 0 V, -diF/dt = 100 A/µs  
T = 100°C 1.5  
TJJ = 100°C 90  
VR = 100 VGE  
ns  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
trr  
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V  
25  
ns  
A
4.06  
2.03  
0.51  
1.14  
0.46  
1.14  
4.83  
2.79  
0.99  
1.40  
0.74  
1.40  
.160  
.080  
.020  
.045  
.018  
.045  
.190  
.110  
.039  
.055  
.029  
.055  
A1  
RthJC  
2.5 K/W  
b
b2  
c
c2  
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
L1  
L2  
L3  
L4  
R
0.46  
0.74  
.018  
.029  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
IXSA 10N60B2D1  
IXSP 10N60B2D1  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
ºC  
@ 25 ºC  
35  
30  
25  
20  
15  
10  
5
20  
18  
16  
14  
12  
10  
8
V
= 17V  
V
= 17V  
GE  
GE  
15V  
15V  
13V  
13V  
11V  
6
11V  
9V  
4
9V  
2
0
0
0.5  
0.5  
10  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
0
1
2
3
4
5
6
7
8
9
10  
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
º
C
20  
18  
16  
14  
12  
10  
8
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 17V  
GE  
V
= 15V  
GE  
15V  
13V  
I
= 20A  
C
I
I
= 10A  
= 5A  
C
C
11V  
6
4
9V  
7V  
2
0
-50  
-25  
0
25  
50  
75  
100 125 150  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
18  
16  
14  
12  
10  
8
7
6
5
4
3
2
1
T
= 25 C  
º
J
I
= 20A  
10A  
5A  
C
T = 125 C  
J
º
6
25  
º
C
4
-40 C  
º
2
0
6
7
8
9
10  
11  
12  
13  
14  
11  
12  
13  
14  
15  
16  
17  
18  
19  
VG E - Volts  
VG E - Volts  
IXSA 10N60B2D1  
IXSP 10N60B2D1  
Fig. 8. Dependence of Turn-off  
Energy Loss on RG  
Fig. 7. Transconductance  
4.5  
4
2.4  
2.2  
2
I
= 20A  
C
3.5  
3
1.8  
1.6  
1.4  
1.2  
1
T = 125 C  
º
J
T = -40 C  
º
J
2.5  
2
V
= 15V  
GE  
CE  
25  
125  
º
C
V
= 480V  
º
C
I
I
= 10A  
= 5A  
C
C
1.5  
1
0.8  
0.6  
0.4  
0.2  
0.5  
0
0
2
4
6
8
10 12 14 16 18 20  
0
50 100 150 200 250 300 350 400 450 500  
I C - Amperes  
R G - Ohms  
Fig. 9. Dependence of Turn-Off  
Energy Loss on IC  
Fig. 10. Dependence of Turn-off  
Energy Loss on Temperature  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
R
= 30Ω  
T = 125  
J
º
C
R
= 30Ω  
G
G
I
= 20A  
C
V
V
= 15V  
V
V
= 15V  
GE  
GE  
= 480V  
= 480V  
CE  
CE  
I
= 10A  
C
T = 25 C  
º
J
I
= 5A  
C
25 35 45 55 65 75 85 95 105 115 125  
4
6
8
10  
12  
14  
16  
18  
20  
I C - Amperes  
T - Degrees Centigrade  
J
Fig. 11. Dependence of Turn-off  
Switching Time on RG  
Fig. 12. Dependence of Turn-off  
Switching Time on IC  
700  
340  
320  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
td(off)  
tfi  
650  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
td(off)  
- - - - - -  
T = 125ºC  
I
= 5A  
C
tfi  
R
V
- - - - - -  
= 30Ω  
= 15V  
J
V
= 15V  
T = 125 C  
º
G
GE  
CE  
J
V
= 480V  
GE  
CE  
V
= 480V  
I
= 20A  
C
I
= 10A  
C
T = 25ºC  
J
I
= 5A  
C
0
50 100 150 200 250 300 350 400 450 500 550  
4
6
8
10  
12  
14  
16  
18  
20  
R G - Ohms  
I C - Amperes  
IXSA 10N60B2D1  
IXSP 10N60B2D1  
Fig. 13. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
340  
320  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
16  
14  
12  
10  
8
td(off)  
V
= 300V  
I
= 20A  
5A  
CE  
C
tfi  
- - - - - -  
I
I
= 10A  
C
G
R
= 30Ω  
G
= 10mA  
V
= 15V  
GE  
CE  
V
= 480V  
6
I
= 5A  
20A  
C
4
I
= 10A  
C
2
0
25 35 45 55 65 75 85 95 105 115 125  
0
2
4
6
8
10  
12  
14  
16  
18  
TJ - Degrees Centigrade  
Q G - nanoCoulombs  
Fig. 16. Reverse-Bias Safe  
Operating Area  
Fig. 15. Capacitance  
1000  
100  
10  
22  
20  
18  
16  
14  
12  
10  
8
C
ies  
C
oes  
T = 125ºC  
J
6
C
res  
R
= 82Ω  
G
4
dV/dT < 10V/ns  
f = 1 MHz  
2
0
1
100 150 200 250 300 350 400 450 500 550 600  
0
5
10  
15  
20  
25  
30  
35  
40  
VC E - Volts  
VC E - Volts  
Fig. 17. Maximum Transient Thermal Resistance  
1.4  
1.2  
1
0.8  
0.6  
0.4  
0.2  
0
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
IXSA 10N60B2D1  
IXSP 10N60B2D1  
30  
A
25  
250  
nC  
10  
A
TVJ = 100°C  
R = 300 V  
IF = 5 A  
IF = 10 A  
IF = 20 A  
V
200  
8
6
4
2
0
IRM  
TVJ = 150°C  
TVJ = 100°C  
IF  
Qr  
20  
15  
10  
5
IF = 5 A  
IF = 10 A  
IF = 20 A  
150  
100  
50  
TVJ = 100°C  
V
R = 300 V  
TVJ = 25°C  
0
0
A/µs  
0
1
2
3
V
100  
1000  
0
200 400 600 800 1000  
-diF/dt  
A/µs  
-diF/dt  
VF  
Fig. 18. Forward current IF versus VF  
2.0  
Fig. 19. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 20. Peak reverse current IRM  
versus -diF/dt  
60  
0.3  
ns  
TVJ = 100°C  
IF = 10 A  
TVJ = 100°C  
V
100  
µs  
V
R = 300 V  
tfr  
VFR  
trr  
1.5  
Kf  
40  
20  
0
0.2  
IF = 5 A  
IF = 10 A  
IF = 20 A  
80  
1.0  
IRM  
60  
0.1  
tfr  
VFR  
0.5  
Qr  
40  
0.0  
0.0  
A/µs  
0
40  
80  
120  
160  
0
200 400 600 800 1000  
0
200 400 600 800 1000  
C
A/µs  
diF/dt  
TVJ  
-diF/dt  
Fig. 21. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 22. Recovery time trr versus -diF/dt  
Fig. 23. Peak forward voltage VFR and  
tfr versus diF/dt  
10  
Constants for ZthJC calculation:  
K/W  
1
i
Rthi (K/W)  
ti (s)  
1
2
3
1.449  
0.5578  
0.4931  
0.0052  
0.0003  
0.0169  
ZthJC  
0.1  
0.01  
DSEP 8-06B  
0.001  
s
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 24. Transient thermal resistance junction-to-case  
NOTE:Fig. 19toFig. 23showstypicalvalues  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508 5,049,961  
5,034,796 5,063,307  
5,187,117  
5,237,481  
5,381,025 6,162,665  
5,486,715  
6,306,728 B1 6,534,343  
6,683,344  
6,710,405B2  
6,259,123B1 6,404,065B1 6,583,505  
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