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4N26VM

型号:

4N26VM

品牌:

ONSEMI[ ONSEMI ]

页数:

13 页

PDF大小:

470 K

Is Now Part of  
To learn more about ON Semiconductor, please visit our website at  
www.onsemi.com  
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor  
product management systems do not have the ability to manage part nomenclature that utilizes an underscore  
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain  
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated  
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please  
email any questions regarding the system integration to Fairchild_questions@onsemi.com.  
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right  
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON  
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON  
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s  
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA  
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended  
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out  
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor  
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
April 2015  
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M  
6-Pin General Purpose Phototransistor Optocouplers  
Features  
Description  
Minimum Current Transfer Ratio at I = 10 mA,  
The general purpose optocouplers consist of a gallium  
arsenide infrared emitting diode driving a silicon photo-  
transistor in a standard plastic six-pin dual-in-line  
package.  
F
V
= 10 V:  
CE  
– 10% for 4N27M and 4N28M  
– 20% for 4N25M and 4N26M  
– 100% for 4N35M, 4N36M and 4N37M  
Safety and Regulatory Approvals:  
– UL1577, 4,170 VAC  
for 1 Minute  
RMS  
– DIN-EN/IEC60747-5-5, 850 V Peak Working  
Insulation Voltage  
Applications  
Power Supply Regulators  
Digital Logic Inputs  
Microprocessor Inputs  
Schematic  
Package Outlines  
1
2
3
6
5
4
NC  
PIN 1. ANODE  
2. CATHODE  
3. NO CONNECTION  
4. EMITTER  
5. COLLECTOR  
6. BASE  
Figure 2. Package Outlines  
Figure 1. Schematic  
©2005 Fairchild Semiconductor Corporation  
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3  
www.fairchildsemi.com  
Safety and Insulation Ratings  
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit  
data. Compliance with the safety ratings shall be ensured by means of protective circuits.  
Parameter  
Characteristics  
< 150 V  
< 300 V  
I–IV  
I–IV  
Installation Classifications per DIN VDE  
0110/1.89 Table 1, For Rated Mains Voltage  
RMS  
RMS  
Climatic Classification  
55/100/21  
2
Pollution Degree (DIN VDE 0110/1.89)  
Comparative Tracking Index  
175  
Symbol  
Parameter  
Value  
Unit  
Input-to-Output Test Voltage, Method A, V  
x 1.6 = V  
,
IORM  
PR  
1360  
V
V
peak  
peak  
Type and Sample Test with t = 10 s, Partial Discharge < 5 pC  
m
V
PR  
Input-to-Output Test Voltage, Method B, V  
x 1.875 = V  
,
IORM  
PR  
1594  
100% Production Test with t = 1 s, Partial Discharge < 5 pC  
m
V
Maximum Working Insulation Voltage  
Highest Allowable Over-Voltage  
850  
6000  
7  
V
V
IORM  
peak  
V
IOTM  
peak  
External Creepage  
mm  
mm  
mm  
mm  
°C  
External Clearance  
7  
External Clearance (for Option TV, 0.4" Lead Spacing)  
Distance Through Insulation (Insulation Thickness)  
10  
0.5  
175  
350  
800  
DTI  
(1)  
T
Case Temperature  
S
(1)  
I
Input Current  
mA  
mW  
Ω
S,INPUT  
(1)  
P
Output Power  
S,OUTPUT  
(1)  
9
R
Insulation Resistance at T , V = 500 V  
> 10  
IO  
S
IO  
Note:  
1. Safety limit values – maximum values allowed in the event of a failure.  
©2005 Fairchild Semiconductor Corporation  
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3  
www.fairchildsemi.com  
2
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.  
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.  
The absolute maximum ratings are stress ratings only. T = 25°C unless otherwise specified.  
A
Symbol  
Parameter  
Value  
Unit  
TOTAL DEVICE  
T
Storage Temperature  
Operating Temperature  
Junction Temperature  
Lead Solder Temperature  
-40 to +125  
-40 to +100  
-40 to +125  
260 for 10 seconds  
270  
°C  
°C  
STG  
T
OPR  
T
ºC  
J
T
°C  
SOL  
Total Device Power Dissipation @ T = 25°C  
mW  
mW/°C  
A
P
D
Derate Above 25°C  
2.94  
EMITTER  
I
DC/Average Forward Input Current  
Reverse Input Voltage  
60  
6
mA  
V
F
V
R
I (pk)  
Forward Current – Peak (300 µs, 2% Duty Cycle)  
3
A
F
LED Power Dissipation @ T = 25°C  
120  
1.41  
mW  
mW/°C  
A
P
D
Derate Above 25°C  
DETECTOR  
V
V
V
Collector-to-Emitter Voltage  
Collector-to-Base Voltage  
Emitter-to-Collector Voltage  
30  
70  
V
V
CEO  
CBO  
ECO  
7
V
Detector Power Dissipation @ T = 25°C  
150  
1.76  
mW  
mW/°C  
A
P
D
Derate Above 25°C  
©2005 Fairchild Semiconductor Corporation  
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3  
www.fairchildsemi.com  
3
Electrical Characteristics  
TA = 25°C unless otherwise specified.  
Individual Component Characteristics  
Symbol  
EMITTER  
Parameter  
Test Conditions  
Min.  
Typ.  
Max. Unit  
V
Input Forward Voltage  
I = 10 mA  
1.18  
1.50  
10  
V
F
F
I
Reverse Leakage Current  
V
= 6.0 V  
0.001  
µA  
R
R
DETECTOR  
BV  
BV  
BV  
Collector-to-Emitter Breakdown Voltage  
Collector-to-Base Breakdown Voltage  
I
I
= 1.0 mA, I = 0  
30  
70  
7
100  
120  
10  
V
V
CEO  
CBO  
ECO  
C
F
= 100 µA, I = 0  
C
F
Emitter-to-Collector Breakdown Voltage I = 100 µA, I = 0  
V
E
F
I
I
Collector-to-Emitter Dark Current  
Collector-to-Base Dark Current  
Capacitance  
V
= 10 V, I = 0  
1
50  
20  
nA  
nA  
pF  
CEO  
CBO  
CE  
CB  
CE  
F
V
V
= 10 V  
C
= 0 V, f = 1 MHz  
8
CE  
Transfer Characteristics  
Symbol  
Parameter  
Test Conditions  
Device  
Min. Typ. Max. Unit  
DC CHARACTERISTICS  
4N35M, 4N36M,  
100  
%
4N37M  
I = 10 mA, V = 10 V  
F
CE  
4N25M, 4N26M  
4N27M, 4N28M  
20  
10  
%
%
Current Transfer Ratio,  
Collector-to-Emitter  
CTR  
I = 10 mA, V = 10 V,  
4N35M, 4N36M,  
4N37M  
F
CE  
40  
40  
%
%
T = -55°C  
A
I = 10 mA, V = 10 V,  
4N35M, 4N36M,  
4N37M  
F
CE  
T = +100°C  
A
4N25M, 4N26M,  
4N27M, 4N28M  
I
= 2 mA, I = 50 mA  
0.5  
0.3  
V
V
C
C
F
Collector-to-Emitter  
Saturation Voltage  
V
CE (SAT)  
4N35M, 4N36M,  
4N37M  
I
= 0.5 mA, I = 10 mA  
F
AC CHARACTERISTICS  
I = 10 mA, V = 10 V,  
4N25M, 4N26M,  
4N27M, 4N28M  
F
CC  
2
2
2
2
µs  
µs  
µs  
µs  
R = 100 Ω (Figure 13)  
L
Non-Saturated  
Turn-on Time  
T
ON  
I
= 2 mA, V = 10 V,  
CC  
4N35M, 4N36M,  
4N37M  
C
10  
10  
R = 100 Ω (Figure 13)  
L
I = 10 mA, V = 10 V,  
4N25M, 4N26M,  
4N27M, 4N28M  
F
CC  
R = 100 Ω (Figure 13)  
L
T
Turn-off Time  
OFF  
I
= 2 mA, V = 10 V,  
CC  
4N35M, 4N36M,  
4N37M  
C
R = 100 Ω (Figure 13)  
L
Isolation Characteristics  
Symbol Characteristic  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
C
R
Input-Output Isolation Voltage t = 1 Minute  
4170  
VAC  
RMS  
ISO  
ISO  
ISO  
Isolation Capacitance  
Isolation Resistance  
V
V
= 0 V, f = 1 MHz  
0.2  
pF  
I-O  
I-O  
11  
= 500 VDC, T = 25°C  
10  
Ω
A
©2005 Fairchild Semiconductor Corporation  
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3  
www.fairchildsemi.com  
4
Typical Performance Curves  
1.8  
1.7  
1.6  
1.5  
1.4  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
T
= 5.0 V  
= 25°C  
Normalized to  
= 10 mA  
CE  
A
I
F
T
T
T
= -55°C  
= 25°C  
= 100°C  
A
1.3  
1.2  
1.1  
1.0  
A
A
1
10  
100  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
I
- LED FORWARD CURRENT (mA)  
I - FORWARD CURRENT (mA)  
F
F
Figure 4. Normalized CTR vs. Forward Current  
Figure 3. LED Forward Voltage vs. Forward Current  
1.4  
1.2  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
I
= 20 mA  
F
I
= 5 mA  
F
I
= 10 mA  
F
1.0  
0.8  
0.6  
0.4  
0.2  
I
F
= 5 mA  
I
= 10 mA  
F
I
= 20 mA  
F
V
CE  
= 5.0 V  
Normalized to  
= 10 mA  
I
F
T
A
= 25°C  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
10  
100  
1000  
R
- BASE RESISTANCE (kΩ)  
BE  
T
A
- AMBIENT TEMPERATURE (°C)  
Figure 6. CTR vs. RBE (Unsaturated)  
Figure 5. Normalized CTR vs. Ambient Temperature  
100  
10  
1.0  
0.9  
T
A
= 25˚C  
V
CE  
= 0.3 V  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
I
= 20 mA  
F
1
I
F
= 10 mA  
I
= 2.5 mA  
F
0.1  
I
= 5 mA  
F
I
= 20 mA  
F
0.01  
0.001  
I
= 10 mA  
I
F
= 5 mA  
F
10  
100  
1000  
0.01  
0.1  
1
10  
R - BASE RESISTANCE (kΩ)  
BE  
I
- COLLECTOR CURRENT (mA)  
C
Figure 8. Collector-Emitter Saturation Voltage  
vs. Collector Current  
Figure 7. CTR vs. RBE (Saturated)  
©2005 Fairchild Semiconductor Corporation  
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3  
www.fairchildsemi.com  
5
Typical Performance Curves (Continued)  
1000  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
I
V
T
= 10 mA  
F
V
10 V  
CC =  
= 2 mA  
= 10 V  
CC  
= 25°C  
I
C
A
R
L
= 100 Ω  
100  
10  
1
T
off  
T
f
T
on  
T
r
0.1  
0.1  
1
10  
100  
10  
100  
R
1000  
10000  
100000  
R - LOAD RESISTOR (kΩ)  
- BASE RESISTANCE (kΩ)  
BE  
Figure 9. Switching Speed vs. Load Resistor  
Figure 10. Normalized t vs. R  
on  
BE  
10000  
1000  
100  
10  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
V
= 10 V  
C
CE  
= 25°  
T
A
1
V
I
R
10 V  
CC =  
= 2 mA  
C
0.1  
= 100 Ω  
L
0.01  
0.001  
0
20  
40  
60  
80  
100  
10  
100  
1000  
10000  
100000  
T
- AMBIENT TEMPERATURE (°C)  
A
R
BE  
- BASE RESISTANCE (kΩ)  
Figure 12. Dark Current vs. Ambient Temperature  
Figure 11. Normalized t vs. R  
off  
BE  
Switching Time Test Circuit and Waveforms  
TEST CIRCUIT  
WAVE FORMS  
V
CC = 10 V  
INPUT PULSE  
IC  
IF  
RL  
10%  
INPUT  
OUTPUT  
OUTPUT PULSE  
90%  
RBE  
tr  
tf  
toff  
ton  
IF to produce IC = 2 mA  
Adjust  
Figure 13. Switching Time Test Circuit and Waveforms  
©2005 Fairchild Semiconductor Corporation  
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3  
www.fairchildsemi.com  
6
Reflow Profile  
300  
260°C  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
> 245°C = 42 s  
Time above  
183°C = 90 s  
°C  
1.822°C/s Ramp-up rate  
60  
40  
33 s  
20  
0
0
60  
120  
180  
270  
360  
Time (s)  
Figure 14. Reflow Profile  
©2005 Fairchild Semiconductor Corporation  
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3  
www.fairchildsemi.com  
7
Ordering Information  
Part Number  
Package  
Packing Method  
4N25M  
DIP 6-Pin  
Tube (50 Units)  
4N25SM  
SMT 6-Pin (Lead Bend)  
SMT 6-Pin (Lead Bend)  
Tube (50 Units)  
4N25SR2M  
4N25VM  
Tape and Reel (1000 Units)  
Tube (50 Units)  
DIP 6-Pin, DIN EN/IEC60747-5-5 Option  
4N25SVM  
4N25SR2VM  
4N25TVM  
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option  
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option  
DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option  
Tube (50 Units)  
Tape and Reel (1000 Units)  
Tube (50 Units)  
Note:  
2. The product orderable part number system listed in this table also applies to the 4N26M, 4N27M, 4N28M, 4N35M,  
4N36M, and 4N37M devices.  
Marking Information  
1
2
4N25  
6
V X YY Q  
5
3
4
Figure 15. Top Mark  
Table 1. Top Mark Definitions  
1
2
3
4
5
6
Fairchild Logo  
Device Number  
DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)  
One-Digit Year Code, e.g., “5”  
Digit Work Week, Ranging from “01” to “53”  
Assembly Package Code  
©2005 Fairchild Semiconductor Corporation  
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3  
www.fairchildsemi.com  
8
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
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