Technische Information / Technical Information
Netz-Thyristor-Modul
Phase Control Thyristor Module
N
TZ 600 N 08...14
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Tvj = - 40°C...Tvj max
Tvj = - 40°C...Tvj max
Tvj = + 25°C...Tvj max
VDRM, VRRM
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung
800, 1000
V
V
repetitive peak forward off-state and reverse voltages
1200, 1400
VDSM
Vorwärts-Stoßspitzensperrspannung
800, 1000
V
V
non-repetitive peak forward off-state voltage
1200, 1400
VRSM
Rückwärts-Stoßspitzensperrspannung
900, 1100
V
V
non-repetitive peak reverse voltage
1300, 1500
ITRMSM
Durchlaßstrom-Grenzeffektivwert
RMS on-state current
1050
A
TC = 85°C
ITAVM
Dauergrenzstrom
600
670
A
A
TC = 77°C
average on-state current
Tvj = 25°C, tp = 10ms
ITSM
Stoßstrom-Grenzwert
17000
14000
A
A
Tvj = Tvj max, tp = 10ms
surge current
Tvj = 25°C, tp = 10ms
Grenzlastintegral
I²t
1445000
980000
A²s
A²s
Tvj = Tvj max, tp = 10ms
I²t-value
(diT/dt)cr
(dvD/dt)cr
DIN IEC 747-6
Kritische Stromsteilheit
200
A/µs
f = 50Hz, iGM = 1A, diG/dt = 1A/µs
critical rate of rise of on-state current
Tvj = Tvj max, vD = 0,67 VDRM
Kritische Spannungssteilheit
6. Kennbuchstabe / 6th letter F
critical rate of rise of off-state voltage
1000
V/µs
Charakteristische Werte / Characteristic values
Tvj = Tvj max, iT = 1700A
vT
Durchlaßspannung
on-state voltage
max. 1,53
0,9
V
Tvj = Tvj max
V(TO)
Schleusenspannung
threshold voltage
V
Tvj = Tvj max
rT
Ersatzwiderstand
slope resistance
0,27
mΩ
mA
V
Tvj = 25°C, vD = 6V
Tvj = 25°C, vD = 6V
IGT
VGT
IGD
VGD
IH
Zündstrom
max. 250
gate trigger current
Zündspannung
max.
2,2
gate trigger voltage
Tvj = Tvj max, vD = 6V
Nicht zündender Steuerstrom
gate non-trigger current
max.
max.
10
5
mA
mA
Tvj = Tvj max, vD = 0,5 VDRM
Tvj = Tvj max, vD = 0,5 VDRM
Nicht zündende Steuerspannung
gate non-trigger voltage
max. 0,25
max. 300
max. 1500
max. 140
V
Tvj = 25°C, vD = 6V, RA = 5Ω
Haltestrom
mA
mA
mA
µs
holding current
Tvj = 25°C, vD = 6V, RGK ≥ 10Ω
IL
Einraststrom
iGM = 1A, diG/dt = 1A/µs, tG = 20µs
latching current
Tvj = Tvj max
iD, iR
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse currents
vD = VDRM, vR = VRRM
tgd
DIN IEC 747-6
Zündverzug
max.
4
Tvj = 25°C, iGM = 1A, diG/dt = 1A/µs
gate controlled delay time
Tvj = Tvj max, iTM = 600A
tq
Freiwerdezeit
vRM = 100V, VDM = 0,67 VDRM
dvD/dt = 20V/µs, -diT/dt = 10A/µs
5. Kennbuchstabe / 5th letter O
circuit commutated turn-off time
typ.
250
µs
VISOL
RMS, f = 50Hz, t = 1min
RMS, f = 50Hz, t = 1sec
Isolations-Prüfspannung
insulation test voltage
3,0
3,6
kV
kV
SZ-MA; R. Jörke
29. Jul 98
A 109/98
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