IXBT24N170
IXBH24N170
Symbol
Test Conditions
Characteristic Values
TO-268 Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = IC110, VCE = 10V, Note 1
15
25
S
Cies
Coes
Cres
2790
163
60
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
140
16
nC
nC
nC
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
Qgc
60
Terminals: 1 - Gate
2,4 - Collector
3 - Emitter
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
33
82
ns
ns
ns
ns
Resistive Switching Times, TJ = 25°C
IC = IC110, VGE = 15V
315
750
VCE = 850V, RG = 10Ω
35
155
325
960
ns
ns
ns
ns
Resistive Switching Times, TJ = 125°C
IC = IC110, VGE = 15V
VCE = 850V, RG = 10Ω
RthJC
RthCS
0.50 °C/W
°C/W
TO-247
0.21
TO-247 Outline
Reverse Diode
∅ P
1
2
3
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
VF
IF = 24A, VGE = 0V
2.8
V
IF = 12A, VGE = 0V, -diF/dt = 100A/μs
trr
1.06
26
μs
VR = 100V
e
IRM
A
Terminals: 1 - Gate
2 - Collector
3 - Emitter
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
