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NX1029X,115

型号：

NX1029X,115

品牌：

NXP[ NXP ]

页数：

20 页

PDF大小：

912 K

下载PDF手册
NX1029X  
T666  
SO  
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET  
Rev. 1 — 12 August 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra  
small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench  
MOSFET technology.  
1.2 Features and benefits  
Logic-level compatible  
Very fast switching  
ESD protection up to 2 kV (N-channel)  
and 1 kV (P-channel)  
AEC-Q101 qualified  
Trench MOSFET technology  
1.3 Applications  
Level shifter  
Load switch  
Power supply converter  
Switching circuits  
1.4 Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
TR2 (P-channel)  
VDS  
VGS  
ID  
drain-source voltage  
Tj = 25 °C  
-
-
-
-
-50  
20  
V
V
gate-source voltage  
drain current  
-20  
-
[1]  
[1]  
VGS = -10 V; Tamb = 25 °C  
Tj = 25 °C  
-170 mA  
TR1 (N-channel)  
VDS  
VGS  
ID  
drain-source voltage  
-
-
-
-
60  
20  
V
V
gate-source voltage  
drain current  
-20  
-
VGS = 10 V; Tamb = 25 °C  
330 mA  
TR1 (N-channel), Static characteristics  
RDSon  
drain-source on-state  
resistance  
VGS = 10 V; ID = 500 mA;  
pulsed; tp ≤ 300 µs;  
δ ≤ 0.01 ; Tj = 25 °C  
-
1
1.6  
Ω
Ω
TR2 (P-channel), Static characteristics  
RDSon  
drain-source on-state  
resistance  
VGS = -10 V; ID = -100 mA;  
Tj = 25 °C  
-
4.5  
7.5  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.  
 
 
 
 
 
 
NX1029X  
NXP Semiconductors  
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET  
2. Pinning information  
Table 2.  
Pinning information  
Symbol Description  
Pin  
1
Simplified outline  
Graphic symbol  
S1  
G1  
D2  
S2  
G2  
D1  
source TR1  
gate TR1  
D2  
D1  
6
5
4
2
3
drain TR2  
source TR2  
gate TR2  
G1  
G2  
4
5
1
2
3
6
drain TR1  
SOT666 (SOT666)  
S1  
S2  
017aaa262  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
NX1029X  
SOT666  
plastic surface-mounted package; 6 leads  
SOT666  
4. Marking  
Table 4.  
Marking codes  
Type number  
NX1029X  
Marking code[1]  
AD  
[1] % = placeholder for manufacturing site code.  
NX1029X  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 12 August 2011  
2 of 20  
 
 
 
 
NX1029X  
NXP Semiconductors  
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
TR2 (P-channel)  
VDS  
VGS  
ID  
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
-50  
V
-20  
20  
V
[1]  
[1]  
VGS = -10 V; Tamb = 25 °C  
VGS = -10 V; Tamb = 100 °C  
Tamb = 25 °C; single pulse; tp ≤ 10 µs  
Tamb = 25 °C  
-
-
-
-
-
-
-170  
-110  
-0.7  
330  
390  
mA  
mA  
A
IDM  
Ptot  
peak drain current  
[2]  
[1]  
total power dissipation  
mW  
mW  
Tsp = 25 °C  
Tj = 25 °C  
1090 mW  
TR1 (N-channel)  
VDS  
VGS  
ID  
drain-source voltage  
gate-source voltage  
drain current  
-
60  
V
-20  
20  
V
[1]  
[1]  
VGS = 10 V; Tamb = 25 °C  
VGS = 10 V; Tamb = 100 °C  
Tamb = 25 °C; single pulse; tp ≤ 10 µs  
Tamb = 25 °C  
-
-
-
-
-
-
330  
210  
1.2  
330  
390  
mA  
mA  
A
IDM  
Ptot  
peak drain current  
[2]  
[1]  
total power dissipation  
mW  
mW  
Tsp = 25 °C  
1090 mW  
Per device  
[2]  
Ptot  
Tj  
total power dissipation  
junction temperature  
ambient temperature  
storage temperature  
Tamb = 25 °C  
-
500  
150  
150  
150  
mW  
°C  
-55  
-55  
-65  
Tamb  
Tstg  
°C  
°C  
TR1 (N-channel), Source-drain diode  
IS source current  
TR2 (P-channel), Source-drain diode  
IS source current  
TR1 N-channel), ESD maximum rating  
[2][1]  
[1]  
Tamb = 25 °C  
Tamb = 25 °C  
-
-
-
-
330  
mA  
mA  
V
-170  
2000  
1000  
[3]  
VESD  
electrostatic discharge voltage HBM  
TR2 (P-channel), ESD maximum rating  
[3]  
VESD  
electrostatic discharge voltage HBM  
V
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.  
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.  
[3] Measured between all pins.  
NX1029X  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 12 August 2011  
3 of 20  
 
 
 
 
NX1029X  
NXP Semiconductors  
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET  
001aao121  
001aao122  
120  
120  
P
I
der  
(%)  
der  
(%)  
80  
80  
40  
0
40  
0
-75  
-25  
25  
75  
125  
175  
-75  
-25  
25  
75  
125  
175  
T (°C)  
j
T (°C)  
j
Fig 1. Normalized total power dissipation as a  
function of junction temperature  
Fig 2. Normalized continuous drain current as a  
function of junction temperature  
017aaa059  
10  
I
D
(A)  
Limit R  
= V /I  
DS D  
DSon  
1
(1)  
(2)  
−1  
10  
10  
10  
(3)  
(4)  
(5)  
−2  
−3  
(6)  
−1  
2
10  
1
10  
10  
V
(V)  
DS  
IDM = single pulse  
(1) tp = 100 μs  
(2) tp = 1 ms  
(3) tp = 10 ms  
(4) DC; Tsp = 25 °C  
(5) tp = 100 ms  
(6) DC; Tamb = 25 °C; drain mounting pad 1 cm2  
Fig 3. Safe operating area TR1 (N-channel); junction to ambient; continuous and peak drain currents as a  
function of drain-source voltage  
NX1029X  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 12 August 2011  
4 of 20  
NX1029X  
NXP Semiconductors  
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET  
001aao140  
-1  
I
D
(A)  
(1)  
(2)  
-1  
-2  
-3  
-10  
(3)  
(4)  
-10  
-10  
(5)  
-1  
2
-10  
-1  
-10  
-10  
V
DS  
(V)  
IDM is single pulse  
(1) tp = 1 ms  
(2) tp = 10 ms  
(3) DC; Tsp = 25 °C  
(4) tp = 100 ms  
(5) DC; Tamb = 25 °C; drain mounting pad 1 cm2  
Fig 4. Safe operating area TR2 (P-channel); junction to ambient; continuous and peak drain currents as a  
function of drain-source voltage  
6. Thermal characteristics  
Table 6.  
Symbol  
Per device  
Rth(j-a)  
Thermal characteristics  
Parameter  
Conditions  
in free air  
in free air  
Min  
Typ  
Max  
Unit  
[1]  
thermal resistance from junction to ambient  
-
-
250  
K/W  
TR1 (N-channel)  
[1]  
[2]  
Rth(j-a)  
thermal resistance from junction to ambient  
-
-
-
330  
280  
-
380  
320  
115  
K/W  
K/W  
K/W  
Rth(j-sp)  
thermal resistance from junction to solder  
point  
TR2 (P-channel)  
[1]  
[2]  
Rth(j-a)  
thermal resistance from junction to ambient  
in free air  
-
-
-
330  
280  
-
380  
320  
115  
K/W  
K/W  
K/W  
Rth(j-sp)  
thermal resistance from junction to solder  
point  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.  
NX1029X  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 12 August 2011  
5 of 20  
 
 
 
NX1029X  
NXP Semiconductors  
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET  
017aaa064  
3
10  
duty cycle = 1  
0.75  
Z
th(j-a)  
(K/W)  
0.5  
0.33  
0.2  
2
10  
0.25  
0.1  
0.05  
0.02  
0.01  
0
10  
1
10  
−3  
−2  
−1  
2
3
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, standard footprint  
Fig 5. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
017aaa065  
3
10  
Z
th(j-a)  
duty cycle = 1  
0.75  
(K/W)  
0.5  
0.33  
2
10  
0.25  
0.1  
0.2  
0.05  
0.02  
0.01  
0
10  
1
10  
−3  
−2  
−1  
2
3
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, mounting pad for drain 1 cm2  
Fig 6. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
NX1029X  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 12 August 2011  
6 of 20  
NX1029X  
NXP Semiconductors  
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET  
017aaa064  
3
10  
duty cycle = 1  
0.75  
Z
th(j-a)  
(K/W)  
0.5  
0.33  
0.2  
2
10  
0.25  
0.1  
0.05  
0.02  
0.01  
0
10  
1
10  
−3  
−2  
−1  
2
3
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, standard footprint  
Fig 7. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
017aaa065  
3
10  
Z
th(j-a)  
duty cycle = 1  
0.75  
(K/W)  
0.5  
0.33  
2
10  
0.25  
0.1  
0.2  
0.05  
0.02  
0.01  
0
10  
1
10  
−3  
−2  
−1  
2
3
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, mounting pad for drain 1 cm2  
Fig 8. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
NX1029X  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 12 August 2011  
7 of 20  
NX1029X  
NXP Semiconductors  
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET  
7. Characteristics  
Table 7.  
Symbol  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
TR2 (P-channel), Static characteristics  
V(BR)DSS  
drain-source  
breakdown voltage  
ID = -10 µA; VGS = 0 V; Tj = 25 °C  
-50  
-
-
V
V
VGSth  
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C  
voltage  
-1.1  
-1.6  
-2.1  
IDSS  
drain leakage current  
VDS = -50 V; VGS = 0 V; Tj = 25 °C  
VDS = -50 V; VGS = 0 V; Tj = 150 °C  
VGS = 20 V; VDS = 0 V; Tj = 25 °C  
VGS = -20 V; VDS = 0 V; Tj = 25 °C  
VGS = -10 V; ID = -100 mA; Tj = 25 °C  
VGS = -10 V; ID = -100 mA; Tj = 150 °C  
VGS = -5 V; ID = -100 mA; Tj = 25 °C  
VDS = -10 V; ID = -100 mA; Tj = 25 °C  
-
-
-
-
-
-
-
-
-
-1  
µA  
µA  
µA  
µA  
Ω
-
-2  
IGSS  
gate leakage current  
-
-10  
-10  
7.5  
13.5  
8.5  
-
-
RDSon  
drain-source on-state  
resistance  
4.5  
8
Ω
5.1  
150  
Ω
gfs  
transfer conductance  
mS  
TR1 (N-channel), Static characteristics  
V(BR)DSS  
drain-source  
breakdown voltage  
ID = 10 µA; VGS = 0 V; Tj = 25 °C  
60  
-
-
V
V
VGSth  
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C  
voltage  
1.1  
1.6  
2.1  
IDSS  
drain leakage current  
VDS = 60 V; VGS = 0 V; Tj = 25 °C  
VDS = 60 V; VGS = 0 V; Tj = 150 °C  
VGS = 20 V; VDS = 0 V; Tj = 25 °C  
VGS = -20 V; VDS = 0 V; Tj = 25 °C  
-
-
-
-
-
-
1
µA  
µA  
µA  
µA  
Ω
-
10  
10  
10  
1.6  
IGSS  
gate leakage current  
-
-
RDSon  
drain-source on-state  
resistance  
VGS = 10 V; ID = 500 mA; pulsed;  
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C  
1
VGS = 10 V; ID = 500 mA; pulsed;  
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 150 °C  
-
-
-
2.25  
1.3  
3.6  
2
Ω
VGS = 5 V; ID = 50 mA; pulsed;  
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C  
Ω
gfs  
transfer conductance  
VDS = 10 V; ID = 100 mA; Tj = 25 °C  
550  
-
mS  
TR2 (P-channel), Dynamic characteristics  
QG(tot)  
QGS  
QGD  
Ciss  
total gate charge  
gate-source charge  
gate-drain charge  
input capacitance  
output capacitance  
VDS = -25 V; ID = -180 mA; VGS = -5 V;  
Tj = 25 °C  
-
-
-
-
-
-
0.26  
0.12  
0.09  
24  
0.35  
nC  
nC  
nC  
pF  
pF  
pF  
-
-
VDS = -25 V; f = 1 MHz; VGS = 0 V;  
Tj = 25 °C  
36  
-
Coss  
Crss  
4.5  
reverse transfer  
capacitance  
1.3  
-
td(on)  
tr  
td(off)  
tf  
turn-on delay time  
rise time  
VDS = -30 V; RL = 250 Ω; VGS = -10 V;  
RG(ext) = 6 Ω; Tj = 25 °C  
-
-
-
-
13  
11  
48  
25  
26  
-
ns  
ns  
ns  
ns  
turn-off delay time  
fall time  
96  
-
NX1029X  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 12 August 2011  
8 of 20  
 
NX1029X  
NXP Semiconductors  
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET  
Table 7.  
Symbol  
Characteristics …continued  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
TR1 (N-channel), Dynamic characteristics  
QG(tot)  
QGS  
QGD  
Ciss  
total gate charge  
gate-source charge  
gate-drain charge  
input capacitance  
output capacitance  
VDS = 30 V; ID = 300 mA; VGS = 4.5 V;  
Tj = 25 °C  
-
-
-
-
-
-
0.5  
0.2  
0.1  
33  
7
0.6  
nC  
nC  
nC  
pF  
pF  
pF  
-
-
VDS = 10 V; f = 1 MHz; VGS = 0 V;  
Tj = 25 °C  
50  
-
Coss  
Crss  
reverse transfer  
capacitance  
4
-
td(on)  
tr  
td(off)  
tf  
turn-on delay time  
rise time  
VDS = 50 V; RL = 250 Ω; VGS = 10 V;  
-
-
-
-
5
10  
-
ns  
ns  
ns  
ns  
RG(ext) = 6 Ω; Tj = 25 °C  
6
turn-off delay time  
fall time  
12  
7
24  
-
TR2 (P-channel), Source-drain diode characteristics  
VSD source-drain voltage IS = -115 mA; VGS = 0 V; Tj = 25 °C  
TR1 (N-channel), Source-drain diode characteristics  
-0.48 -0.85 -1.2  
V
V
VSD  
source-drain voltage  
IS = 115 mA; VGS = 0 V; Tj = 25 °C  
0.47  
0.75  
1.1  
017aaa039  
017aaa040  
−3  
0.7  
10  
V
= 4.0 V  
GS  
I
D
(A)  
0.6  
3.5 V  
I
D
(A)  
3.25 V  
3.0 V  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
−4  
−5  
−6  
10  
(1)  
(2)  
(3)  
2.75 V  
2.5 V  
10  
10  
0.0  
1.0  
2.0  
3.0  
V
4.0  
0.0  
1.0  
2.0  
3.0  
(V)  
V
(V)  
GS  
DS  
Tj = 25 °C  
Tj = 25 °C; VDS = 5 V  
(1) minimum values  
(2) typical values  
(3) maximum values  
Fig 9. TR1: Output characteristics: drain current as a  
function of drain-source voltage; typical values  
Fig 10. TR1: Sub-threshold drain current as a function  
of gate-source voltage  
NX1029X  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 12 August 2011  
9 of 20  
NX1029X  
NXP Semiconductors  
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET  
017aaa041  
017aaa042  
6.0  
6.0  
R
DSon  
R
DSon  
(Ω)  
(Ω)  
(1)  
4.0  
2.0  
0.0  
4.0  
2.0  
0.0  
(2)  
(3)  
(4)  
(1)  
(2)  
(5)  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
0.0  
2.0  
4.0  
6.0  
8.0  
10.0  
(V)  
I
(A)  
V
GS  
D
Tj = 25 °C  
ID = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.01  
(1) Tj = 150 °C  
(1) VGS = 3.25 V  
(2) VGS = 3.5 V  
(3) VGS = 4 V  
(4) VGS = 5 V  
(5) VGS = 10 V  
(2) Tj = 25 °C  
Fig 11. TR1: Drain-source on-state resistance as a  
function of drain current; typical values  
Fig 12. TR1: Drain-source on-state resistance as a  
function of gate-source voltage; typical values  
017aaa043  
017aaa298  
1.0  
2.4  
I
D
a
(A)  
0.8  
1.8  
(1)  
(2)  
0.6  
0.4  
0.2  
0.0  
1.2  
0.6  
0.0  
0.0  
1.0  
2.0  
3.0  
4.0  
V
5.0  
(V)  
–60  
0
60  
120  
180  
T (°C)  
j
GS  
VDS > ID x RDSon  
(1) Tj = 25 °C  
(2) Tj = 150 °C  
Fig 13. TR1: Transfer characteristics: drain current as  
a function of gate-source voltage; typical  
values  
Fig 14. TR1: Normalized drain-source on-state  
resistance as a function of junction  
temperature; typical values  
NX1029X  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 12 August 2011  
10 of 20  
NX1029X  
NXP Semiconductors  
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET  
017aaa299  
017aaa046  
2
3.0  
10  
V
GS(th)  
(V)  
(1)  
C
(pF)  
(1)  
(2)  
(3)  
2.0  
1.0  
0.0  
(2)  
10  
(3)  
1
10  
−1  
2
–60  
0
60  
120  
180  
1
10  
10  
T (°C)  
j
V
(V)  
DS  
f = 1 MHz; VGS = 0 V  
(1) Ciss  
ID = 0.25 mA; VDS = VGS  
(1) maximum values  
(2) typical values  
(2) Coss  
(3) Crss  
(3) minimum values  
Fig 15. TR1: Gate-source threshold voltage as a  
function of junction temperature  
Fig 16. TR1: Input, output and reverse transfer  
capacitances as a function of drain-source  
voltage; typical values  
017aaa047  
5.0  
V
GS  
(V)  
V
DS  
4.0  
I
D
3.0  
2.0  
1.0  
0.0  
V
GS(pl)  
V
GS(th)  
GS  
V
Q
Q
GS1  
GS2  
Q
Q
GD  
GS  
Q
G(tot)  
003aaa508  
0.0  
0.2  
0.4  
0.6  
0.8  
Q
(nC)  
G
ID = 300 mA; VDS = 30 V; Tamb = 25 °C  
Fig 17. TR1: Gate-source voltage as a function of gate  
charge; typical values  
Fig 18. Gate charge waveform definitions  
NX1029X  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 12 August 2011  
11 of 20  
NX1029X  
NXP Semiconductors  
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET  
017aaa048  
001aao124  
1.2  
-0.20  
V
= -10 V -4.0 V -3.5 V  
GS  
I
D
I
S
(A)  
(A)  
-0.15  
0.8  
-3.0 V  
(1)  
(2)  
-0.10  
-0.05  
0
0.4  
-2.5 V  
0.0  
0.0  
0.4  
0.8  
1.2  
0
-1  
-2  
-3  
-4  
V
(V)  
DS  
V
(V)  
SD  
VGS = 0 V  
Tj = 25 °C  
(1) Tj = 150 °C  
(2) Tj = 25 °C  
Fig 19. TR1: Source current as a function of  
source-drain voltage; typical values  
Fig 20. TR2: Output characteristics: drain current as a  
function of drain-source voltage; typical values  
001aao125  
001aao126  
-3  
-4  
-5  
-6  
-10  
12  
(1)  
(2)  
(3)  
I
R
D
DSon  
(Ω)  
(A)  
(1)  
(2)  
(3)  
-10  
8
(4)  
(5)  
-10  
-10  
4
0
0
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
(V)  
0
-0.1  
-0.2  
-0.3  
-0.4  
V
I (A)  
D
GS  
Tj = 25 °C; VDS = -5 V  
(1) minimum values  
(2) typical values  
Tj = 25 °C  
(1) VGS = -3.0 V  
(2) VGS = -3.5 V  
(3) VGS = -4.0 V  
(4) VGS = -5.0 V  
(5) VGS = -10.0 V  
(3) maximum values  
Fig 21. TR2: Sub-threshold drain current as a function  
of gate-source voltage  
Fig 22. TR2: Drain-source on-state resistance as a  
function of drain current; typical values  
NX1029X  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 12 August 2011  
12 of 20  
NX1029X  
NXP Semiconductors  
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET  
001aao127  
001aao128  
14  
-0.20  
I
D
R
DSon  
(Ω)  
(A)  
(1)  
(2)  
-0.15  
10  
(1)  
(2)  
-0.10  
-0.05  
0
6
2
(2)  
(1)  
0
-2  
-4  
-6  
-8  
-10  
(V)  
0
-1  
-2  
-3  
-4  
V
GS  
V
(V)  
GS  
ID = -200 mA  
(1) Tj = 150 °C  
(2) Tj = 25 °C  
VDS > ID x RDSon  
(1) Tj = 25 °C  
(2) Tj = 150 °C  
Fig 23. TR2: Drain-source on-state resistance as a  
function of gate-source voltage; typical values  
Fig 24. TR2: Transfer characteristics: drain current as  
a function of gate-source voltage; typical  
values  
001aao130  
001aao131  
2
-3  
10  
V
GS(th)  
(V)  
C
(pF)  
(1)  
-2  
-1  
0
(1)  
(2)  
(2)  
10  
(3)  
(3)  
1
-1  
2
-60  
0
60  
120  
180  
-10  
-1  
-10  
-10  
T (°C)  
j
V
(V)  
DS  
ID = -0.25 mA; VDS = VGS  
(1) maximum values  
(2) typical values  
f = 1 MHz; VGS = 0 V  
(1) Ciss  
(2) Coss  
(3) minimum values  
(3) Crss  
Fig 25. TR2: Gate-source threshold voltage as a  
function of junction temperature  
Fig 26. TR2: Input, output and reverse transfer  
capacitances as a function of drain-source  
voltage; typical values  
NX1029X  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 12 August 2011  
13 of 20  
NX1029X  
NXP Semiconductors  
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET  
001aao132  
001aao133  
-10  
-0.3  
V
GS  
(V)  
I
S
(A)  
-8  
-6  
-4  
-2  
0
-0.2  
-0.1  
(1)  
(2)  
0
0
0.2  
0.4  
0.6  
0
-0.4  
-0.8  
-1.2  
Q
G
(nC)  
V
(V)  
SD  
ID = -180 mA; VDS = -25 V; Tamb = 25 °C  
VGS = 0 V  
(1) Tj = 150 °C  
(2) Tj = 25 °C  
Fig 27. TR2: Gate-source voltage as a function of gate  
charge; typical values  
Fig 28. TR2: Source current as a function of  
source-drain voltage; typical values  
8. Test information  
t
t
1
2
P
duty cycle δ =  
t
2
t
1
t
006aaa812  
Fig 29. Duty cycle definition  
8.1 Quality information  
This product has been qualified in accordance with the Automotive Electronics Council  
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is  
suitable for use in automotive applications.  
NX1029X  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 12 August 2011  
14 of 20  
 
 
NX1029X  
NXP Semiconductors  
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET  
9. Package outline  
Plastic surface-mounted package; 6 leads  
SOT666  
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index  
A
c
1
2
3
e
1
b
w
M
A
p
L
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
UNIT  
b
p
c
D
E
e
e
H
L
w
y
A
p
1
E
0.6  
0.5  
0.27  
0.17  
0.18  
0.08  
1.7  
1.5  
1.3  
1.1  
1.7  
1.5  
0.3  
0.1  
mm  
1.0  
0.5  
0.1  
0.1  
REFERENCES  
JEDEC JEITA  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
04-11-08  
06-03-16  
SOT666  
Fig 30. Package outline SOT666 (SOT666)  
NX1029X  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 12 August 2011  
15 of 20  
 
NX1029X  
NXP Semiconductors  
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET  
10. Soldering  
2.75  
2.45  
2.1  
1.6  
solder lands  
0.4  
(6×)  
0.3  
(2×)  
0.25  
(2×)  
placement area  
0.538  
0.55  
1.075  
1.7  
2
(2×)  
solder paste  
occupied area  
0.325 0.375  
(4×) (4×)  
Dimensions in mm  
1.7  
0.45  
0.6  
(4×)  
(2×)  
0.5  
0.65  
(4×)  
(2×)  
sot666_fr  
Fig 31. Reflow soldering footprint for SOT666 (SOT666)  
NX1029X  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 12 August 2011  
16 of 20  
 
NX1029X  
NXP Semiconductors  
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET  
11. Revision history  
Table 8.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
NX1029X v.1  
20110812  
Product data sheet  
-
-
NX1029X  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 12 August 2011  
17 of 20  
 
NX1029X  
NXP Semiconductors  
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET  
12. Legal information  
12.1 Data sheet status  
Document status [1] [2]  
Product status [3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term 'short data sheet' is explained in section "Definitions".  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product  
status information is available on the Internet at URL http://www.nxp.com.  
Right to make changes — NXP Semiconductors reserves the right to make  
12.2 Definitions  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Preview — The document is a preview version only. The document is still  
subject to formal approval, which may result in modifications or additions.  
NXP Semiconductors does not give any representations or warranties as to  
the accuracy or completeness of information included herein and shall have  
no liability for the consequences of use of such information.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
12.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
NX1029X  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 12 August 2011  
18 of 20  
 
 
 
 
 
 
 
NX1029X  
NXP Semiconductors  
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,  
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,  
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,  
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,  
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
HD Radio and HD Radio logo — are trademarks of iBiquity Digital  
Corporation.  
Export control — This document as well as the item(s) described herein may  
be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
13. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
NX1029X  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 12 August 2011  
19 of 20  
 
 
NX1029X  
NXP Semiconductors  
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . .1  
Features and benefits. . . . . . . . . . . . . . . . . . . . .1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
Quick reference data . . . . . . . . . . . . . . . . . . . . .1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2  
Ordering information. . . . . . . . . . . . . . . . . . . . . .2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3  
Thermal characteristics . . . . . . . . . . . . . . . . . . .5  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .8  
Test information. . . . . . . . . . . . . . . . . . . . . . . . .14  
Quality information . . . . . . . . . . . . . . . . . . . . . .14  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .15  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .17  
3
4
5
6
7
8
8.1  
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . .18  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .18  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .18  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .18  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .19  
12.1  
12.2  
12.3  
12.4  
13  
Contact information. . . . . . . . . . . . . . . . . . . . . .19  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2011.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 12 August 2011  
Document identifier: NX1029X  
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