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NZT6726L99Z

型号：

NZT6726L99Z

品牌：

FAIRCHILD[ FAIRCHILD SEMICONDUCTOR ]

页数：

4 页

PDF大小：

124 K

下载PDF手册
Discrete POWER & Signal  
Technologies  
TN6726A  
NZT6726  
C
E
C
B
TO-226  
C
SOT-223  
B
E
PNP General Purpose Amplifier  
This device is designed for general purpose medium power  
amplifiers and switches requiring collector currents to 1.0 A.  
Sourced from Process 77.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
30  
40  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
1.5  
A
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
TN6726A  
*NZT6726  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
1.0  
8.0  
50  
1.0  
8.0  
W
mW/°C  
°C/W  
Rθ  
JC  
Thermal Resistance, Junction to Ambient  
125  
125  
Rθ  
°C/W  
JA  
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  
1997 Fairchild Semiconductor Corporation  
PNP General Purpose Amplifier  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage  
IC = 10 mA, IB = 0  
IC = 100 µA, IE = 0  
IE = 100 µA, IC = 0  
VCB = 40 V, IE = 0  
VEB = 5.0 V, IC = 0  
30  
40  
V
V
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Cutoff Current  
5.0  
V
0.1  
0.1  
µA  
µA  
IEBO  
Emitter-Cutoff Current  
ON CHARACTERISTICS*  
hFE  
DC Current Gain  
IC = 100 mA, VCE = 1.0 V  
IC = 1.0 A, VCE = 1.0 V  
IC = 1.0 A, IB = 100 mA  
60  
50  
250  
0.5  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
V
V
VCE(sat)  
VBE(on)  
IC = 1.0 A, VCE = 1.0 V  
1.2  
SMALL SIGNAL CHARACTERISTICS  
Small-Signal Current Gain  
IC = 50 mA, VCE = 10 V,  
f = 20 MHz  
VCB = 10 V, IE = 0, f = 1.0 MHz  
2.5  
25  
30  
hfe  
Collector-Base Capacitance  
pF  
Ccb  
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%  
DC Typical Characteristics  
Typical Pulsed Current Gain  
vs Collector Current  
Collector-Emitter Saturation  
Voltage vs Collector Current  
300  
1
0.8  
0.6  
0.4  
0.2  
VCE = 5V  
β
= 10  
250  
125 °C  
200  
25 °C  
25 °C  
150  
100  
- 40 ºC  
- 40 ºC  
125 °C  
50  
0
0.01  
0
0.01  
0.1  
1
3
0.1  
1
2
I C - COLLECTOR CURRENT (A)  
I C - COLLECTOR CURRENT (A)  
PNP General Purpose Amplifier  
(continued)  
DC Typical Characteristics (continued)  
Base-Emitter ON Voltage vs  
Collector Current  
Base-Emitter Saturation  
Voltage vs Collector Current  
1
0.8  
0.6  
0.4  
0.2  
β
= 10  
1
0.8  
0.6  
0.4  
- 40 ºC  
- 40 ºC  
25 °C  
25 °C  
125 °C  
125 °C  
V
= 5V  
CE  
1
10  
100  
1000  
1
10  
100  
1000  
IC - COLLECTOR CURRENT (mA)  
I C - COLLECTOR CURRENT (mA)  
Collector-Cutoff Current  
vs Ambient Temperature  
100  
10  
1
VCB = 20V  
0.1  
25  
50  
75  
100  
125  
150  
º
TA - AMBIENT TEMPERATURE ( C)  
AC Typical Characteristics  
Collector-Base Capacitance  
vs. Collector-Base Voltage  
Gain Bandwidth Product  
vs. Collector Current  
PNP General Purpose Amplifier  
(continued)  
AC Typical Characteristics (continued)  
Safe Operating Area TO-226  
POWER DISSIPATION vs  
AMBIENT TEMPERATURE  
1
0.75  
0.5  
TO-226  
SOT-223  
0.25  
0
0
25  
50  
75  
100  
125  
150  
TEMPERATURE (oC)  
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