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QT113B-ISG

型号：

QT113B-ISG

品牌：

ATMEL[ ATMEL ]

页数：

24 页

PDF大小：

454 K

下载PDF手册
Atmel QT113B  
1-Channel QTouch® Touch Sensor IC  
DATASHEET  
Features  
Number of Keys:  
One  
Configurable as either a single key or a proximity sensor  
Economy:  
Less expensive than many mechanical switches  
Only one external part required – a low-cost capacitor  
Signal processing:  
Consensus filter for noise immunity  
Sensitivity easily adjusted  
100% autocal for life – no adjustments required  
10 s, 60 s, infinite auto-recal timeouts (strap options)  
Toggle mode for on/off control (strap option)  
Interface:  
Digital output, active high  
Moisture tolerance:  
Increased moisture tolerance based on hardware design and firmware tuning  
Power:  
2.5 V to 5 V, 600 µA single supply operation  
Package:  
8-pin SOIC  
Applications:  
Light switches, appliance control, access systems, elevator buttons, proximity  
sensor applications, security systems, pointing devices, consumer devices,  
mechanical switch or button  
Patents:  
QTouch® (patented charge-transfer method)  
HeartBeat (monitors health of device)  
9525D–AT42–05/2013  
9525D–AT42–05/2013  
1.  
Pinout and Schematic  
1.1  
Pinout Configuration  
VDD  
OUT  
VSS  
1
2
3
4
8
7
6
5
SNS2  
SNS1  
GAIN  
QT113B  
OPT1  
OPT2  
1.2  
Pinout Descriptions  
Table 1-1. Pin Listing  
Pin  
1
Name  
VDD  
Type  
Comments  
Supply  
If Unused, Connect To...  
P
0
0
0
P
I
–
2
OUT  
OPT1  
OPT2  
GAIN  
SNS1  
SNS2  
VSS  
Output  
–
3
Option selection 1  
Option selection 2  
Gain control  
Sense 1  
See Table 3-1 on page 10  
4
See Table 3-1 on page 10  
5
See Table 2-1 on page 7  
6
–
–
–
7
I
Sense 2  
8
I
Ground  
I
Input only  
O
P
Output only, push-pull  
Ground or power  
I/O  
Input/output  
OD Open drain output  
QT113B [DATASHEET]  
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9525D–AT42–05/2013  
1.3  
Schematic  
Figure 1-1. Basic Circuit  
+2.5 to 5 V  
SENSING  
ELECTRODE  
1
RSERIES  
Vdd  
2
3
4
7
5
6
OUT  
SNS2  
GAIN  
SNS1  
Cs  
OPT1  
OPT2  
10 nF  
Cx  
VSS  
OUTPUT=DC  
TIMEOUT=10 Secs  
TOGGLE=OFF  
GAIN=HIGH  
8
QT113B [DATASHEET]  
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9525D–AT42–05/2013  
2.  
Overview  
2.1  
Introduction  
The QT113B (QT113B) charge-transfer (QT™) touch sensor is a self-contained digital IC capable of detecting near-  
proximity or touch. It will project a proximity sense field through air, and any dielectric like glass, plastic, stone,  
ceramic, and most kinds of wood. It can also turn small metal-bearing objects into intrinsic sensors, making them  
responsive to proximity or touch. This capability coupled with its ability to self calibrate continuously can lead to  
entirely new product concepts.  
It is designed specifically for human interfaces, like control panels, appliances, toys, lighting controls, or anywhere a  
mechanical switch or button may be found; it may also be used for some material sensing and control applications  
provided that the presence duration of objects does not exceed the recalibration timeout interval.  
Power consumption is only 600 mA in most applications. In most cases the power supply need only be minimally  
regulated, for example by Zener diodes or an inexpensive 3-terminal regulator. The QT113B requires only a  
common inexpensive capacitor in order to function.  
The QT113B RISC core employs signal processing techniques pioneered by Atmel. These are specifically designed  
to make the device survive real-world challenges, such as stuck sensor conditions and signal drift.  
The option-selectable toggle mode permits on/off touch control, for example for light switch replacement. The Atmel-  
pioneered HeartBeat signal is also included, allowing a microcontroller to monitor the health of the QT113B  
continuously, if desired. By using the charge transfer principle, the IC delivers a level of performance clearly superior  
to older technologies in a highly cost-effective package.  
The QT113B is a drop-in replacement for the QT113. The only circuit change required might be the use of a smaller  
value CS capacitor. A reduction by a factor of 2 is often required, but some experimentation is necessary to ascertain  
the correct value of CS.  
Figure 1-1 on page 3 shows a basic circuit using the device.  
2.2  
Basic Operation  
The QT113B employs bursts of charge-transfer cycles to acquire its signal. Burst mode permits power consumption  
in the microamp range, dramatically reduces RF emissions, lowers susceptibility to EMI, and yet permits excellent  
response time. Internally the signals are digitally processed to reject impulse noise, using a consensus filter which  
requires three consecutive confirmations of a detection before the output is activated.  
The QT switches and charge measurement hardware functions are all internal to the QT113B (Figure 1-1 on page  
3). A 14-bit single-slope switched capacitor ADC includes both the required QT charge and transfer switches in a  
configuration that provides direct ADC conversion. The ADC is designed to dynamically optimize the QT burst length  
according to the rate of charge buildup on CS, which in turn depends on the values of CS, CX, and Vdd. Vdd is used  
as the charge reference voltage. Larger values of CX cause the charge transferred into CS to rise more rapidly,  
reducing available resolution; as a minimum resolution is required for proper operation, this can result in dramatically  
reduced apparent gain. Conversely, larger values of CS reduce the rise of differential voltage across it, increasing  
available resolution by permitting longer QT bursts. The value of CS can thus be increased to allow larger values of  
CX to be tolerated (m TFigure 5-1, Figure 5-2, and Figure 5-3 on page 19).  
QT113B [DATASHEET]  
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Figure 2-1. Internal Switching and Timing  
ELECTRODE  
Result  
SNS2  
SNS1  
Single-  
slope  
14-bit  
Switched  
Capacitor  
ADC  
CS  
Burst  
Con-  
troller  
CX  
Start  
Done  
Charge  
Amp  
The IC is responsive to both CX and CS, and changes in CS can result in substantial changes in sensor gain.  
Option pins allow the selection or alteration of several special features and sensitivity.  
2.3  
Electrode Drive  
The internal ADC treats CS as a floating transfer capacitor; as a result, the sense electrode can in theory be  
connected to either SNS1 or SNS2 with no performance difference. However the electrode should only be connected  
to pin SNS2 for optimum noise immunity.  
In all cases the rule CS » CX must be observed for proper operation; a typical load capacitance (CX) ranges from 10 –  
20 pF while CS is usually around 10 – 50 nF.  
Increasing amounts of CX destroy gain; therefore it is important to limit the amount of stray capacitance on both SNS  
terminals, for example by minimizing trace lengths and widths and keeping these traces away from power or ground  
traces or copper pours.  
The traces and any components associated with SNS1 and SNS2 will become touch sensitive and should be treated  
with caution to limit the touch area to the desired location.  
A series resistor, Rseries, should be placed inline with the SNS2 pin to the electrode to suppress ESD and EMC  
effects.  
2.4  
Electrode design  
2.4.1 Electrode Geometry and Size  
There is no restriction on the shape of the electrode; in most cases common sense and a little experimentation can  
result in a good electrode design. The QT113B will operate equally well with long, thin electrodes as with round or  
square ones; even random shapes are acceptable. The electrode can also be a 3-dimensional surface or object.  
Sensitivity is related to electrode surface area, orientation with respect to the object being sensed, object  
composition, and the ground coupling quality of both the sensor circuit and the sensed object.  
If a relatively large electrode surface is desired, and if tests show that the electrode has more capacitance than the  
QT113B can tolerate, the electrode can be made into a sparse mesh (Figure 2-2) having lower CX than a solid plane.  
Sensitivity may even remain the same, as the sensor will be operating in a lower region of the gain curves.  
2.4.2 Kirchoff’s Current Law  
Like all capacitance sensors, the QT113B relies on Kirchoff’s Current Law (Figure 2-2) to detect the change in  
capacitance of the electrode. This law as applied to capacitive sensing requires that the sensor field current must  
complete a loop, returning back to its source in order for capacitance to be sensed. Although most designers relate  
to Kirchoff’s law with regard to hardwired circuits, it applies equally to capacitive field flows. By implication it requires  
QT113B [DATASHEET]  
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that the signal ground and the target object must both be coupled together in some manner for a capacitive sensor to  
operate properly. Note that there is no need to provide actual hardwired ground connections; capacitive coupling to  
ground (Cx1) is always sufficient, even if the coupling might seem very tenuous. For example, powering the sensor  
via an isolated transformer will provide ample ground coupling, since there is capacitance between the windings  
and/or the transformer core, and from the power wiring itself directly to local earth. Even when battery powered, just  
the physical size of the PCB and the object into which the electronics is embedded will generally be enough to  
couple a few picofarads back to local earth.  
Figure 2-2. Kirchoff's Current Law  
C
X2  
Sense Electrode  
SENSOR  
C
X1  
C
X3  
Surroundingenvironment  
2.4.3 Virtual Capacitive Grounds  
When detecting human contact (e.g. a fingertip), grounding of the person is never required. The human body  
naturally has several hundred picofarads of ‘free space’ capacitance to the local environment (Cx3 in Figure 2-2),  
which is more than two orders of magnitude greater than that required to create a return path to the QT113B via  
earth. The QT113B PCB however can be physically quite small, so there may be little ‘free space’ coupling (Cx1 in  
Figure 2-2) between it and the environment to complete the return path. If the QT113B circuit ground cannot be earth  
grounded by wire, for example via the supply connections, then a ‘virtual capacitive ground’ may be required to  
increase return coupling.  
A ‘virtual capacitive ground’ can be created by connecting the QT113B own circuit ground to:  
A nearby piece of metal or metallized housing;  
A floating conductive ground plane;  
Another electronic device (to which its output might be connected anyway).  
Free-floating ground planes such as metal foils should maximize exposed surface area in a flat plane if possible. A  
square of metal foil will have little effect if it is rolled up or crumpled into a ball. Virtual ground planes are more  
effective and can be made smaller if they are physically bonded to other surfaces, for example a wall or floor.  
2.4.4 Field Shaping  
The electrode can be prevented from sensing in undesired directions with the assistance of metal shielding  
connected to circuit ground (Figure 2-3). For example, on flat surfaces, the field can spread laterally and create a  
larger touch area than desired. To stop field spreading, it is only necessary to surround the touch electrode on all  
sides with a ring of metal connected to circuit ground; the ring can be on the same or opposite side from the  
electrode. The ring will kill field spreading from that point outwards.  
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Figure 2-3. Shielding Against Fringe Fields  
Sense  
wire  
Sense  
wire  
Unshielded  
Electrode  
Shielded  
Electrode  
If one side of the panel to which the electrode is fixed has moving traffic near it, these objects can cause inadvertent  
detections. This is called ‘walk-by’ and is caused by the fact that the fields radiate from either surface of the electrode  
equally well. Shielding in the form of a metal sheet or foil connected to circuit ground will prevent walk-by; putting a  
small air gap between the grounded shield and the electrode will keep the value of CX lower to reduce loading and  
keep gain high.  
2.4.5 Sensitivity  
The QT113B can be set for one of 2 gain levels using the GAIN pin 5 (Table 1-1). This sensitivity change is made by  
altering the internal numerical threshold level required for a detection. Note that sensitivity is also a function of other  
things: like the value of CS, electrode size and capacitance, electrode shape and orientation, the composition and  
aspect of the object to be sensed, the thickness and composition of any overlaying panel material, and the degree of  
ground coupling of both sensor and object.  
Table 2-1. Gain Setting Strap Options  
Gain  
Tie Pin 5 to  
Vdd  
High – 6 counts  
Low – 12 counts  
Vss (Gnd)  
2.4.5.1 Increasing Sensitivity  
In some cases it may be desirable to increase sensitivity further, for example when using the sensor with very thick  
panels having a low dielectric constant.  
Sensitivity can often be increased by using a bigger electrode, reducing panel thickness, or altering panel  
composition. Increasing electrode size can have diminishing returns, as high values of CX will reduce sensor gain  
(Figure 5-1 to Figure 5-3 on page 19). The value of CS also has a dramatic effect on sensitivity, and this can be  
increased in value with the tradeoff of reduced response time. Increasing the electrode's surface area will not  
QT113B [DATASHEET]  
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9525D–AT42–05/2013  
substantially increase touch sensitivity if its diameter is already much larger in surface area than the object being  
detected. Panel material can also be changed to one having a higher dielectric constant, which will help propagate  
the field. Metal areas near the electrode will reduce the field strength and increase CX loading.  
Ground planes around and under the electrode and its SNS trace will cause high CX loading and destroy gain. The  
possible signal-to-noise ratio benefits of ground area are more than negated by the decreased gain from the circuit,  
and so ground areas around electrodes are discouraged. Keep ground away from the electrodes and traces.  
2.4.5.2 Decreasing Sensitivity  
In some cases the QT113B may be too sensitive, even on low gain. In this case, gain can be lowered further by  
decreasing CS.  
QT113B [DATASHEET]  
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3.  
QT113B Specifics  
3.1  
Signal Processing  
The QT113B processes all signals using 16-bit math, using a number of algorithms pioneered by Atmel. The  
algorithms are specifically designed to provide for high 'survivability' in the face of numerous adverse environmental  
changes.  
3.1.1 Drift Compensation Algorithm  
Signal drift can occur because of changes in CX and CS over time. It is crucial that drift be compensated for,  
otherwise false detections, non-detections, and sensitivity shifts will follow.  
Drift compensation (Figure 3-1) is performed by making the reference level track the raw signal at a slow rate, but  
only while there is no detection in effect. The rate of adjustment must be performed slowly, otherwise legitimate  
detections could be ignored. The QT113B drift compensates using a slew-rate limited change to the reference level;  
the threshold and hysteresis values are slaved to this reference.  
Figure 3-1. Drift Compensation  
Signal  
Hysteresis  
Threshold  
Reference  
Output  
Once an object is sensed, the drift compensation mechanism ceases since the signal is legitimately high, and  
therefore should not cause the reference level to change.  
The QT113B drift compensation is asymmetric: the reference level drift-compensates in one direction faster than it  
does in the other. Specifically, it compensates faster for decreasing signals than for increasing signals. Increasing  
signals should not be compensated for quickly, since an approaching finger could be compensated for partially or  
entirely before even approaching the sense electrode. However, an obstruction over the sense pad, for which the  
sensor has already made full allowance for, could suddenly be removed leaving the sensor with an artificially  
elevated reference level and thus become insensitive to touch. In this latter case, the sensor will compensate for the  
object's removal very quickly, usually in only a few seconds.  
With large values of CS and small values of CX, drift compensation will appear to operate more slowly than with the  
converse. Note that the positive and negative drift compensation rates are different.  
3.1.2 Threshold Calculation  
The internal threshold level is fixed at one of two setting as determined by Table 2-1 on page 7. These settings are  
fixed with respect to the internal reference level, which in turn will move in accordance with the drift compensation  
mechanism.  
The QT113B employs a hysteresis dropout below the threshold level of 17% of the delta between the reference and  
threshold levels.  
QT113B [DATASHEET]  
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3.1.3 Max On-Duration  
If an object or material obstructs the sense pad the signal may rise enough to create a detection, preventing further  
operation. To prevent this, the sensor includes a timer which monitors detections. If a detection exceeds the timer  
setting, the timer causes the sensor to perform a full recalibration (when not set to infinite). This is known as the Max  
On-Duration feature.  
After the Max On-Duration interval, the sensor will once again function normally to the best of its ability given  
electrode conditions. There are two finite timeout durations available via strap option: 10 and 60 seconds (Table 2-1  
on page 7).  
3.1.4 Detection Integrator  
It is desirable to suppress detections generated by electrical noise or from quick brushes with an object. To  
accomplish this, the QT113B incorporates a detect integration counter that increments with each detection until a  
limit is reached, after which the output is activated. If no detection is sensed prior to the final count, the counter is  
reset immediately to zero. In the QT113B, the required count is 3.  
The Detection Integrator can also be viewed as a 'consensus' filter, that requires three successive detections to  
create an output.  
3.1.5 Forced Sensor Recalibration  
The QT113B has no recalibration pin; a forced recalibration is accomplished only when the device is powered up.  
However, supply drain is low so it is a simple matter to treat the entire IC as a controllable load; simply driving the  
QT113B Vdd pin directly from another logic gate or a microcontroller port (Figure 3-2 on page 11) will serve as both  
power and 'forced recal'. The source resistance of most CMOS gates and microcontrollers are low enough to provide  
direct power without problem. Note that many 8051-based micros have only a weak pull-up drive capability and will  
require CMOS buffering. 74HC or 74AC series gates can directly power the QT113B, as can most other  
microcontrollers.  
Option strap configurations are read by the QT113B only on power-up. Configurations can only be changed by  
powering the QT113B down and back up again; again, a microcontroller can directly alter most of the configurations  
and cycle power to put them in effect.  
3.1.6 Response Time  
The QT113B response time is highly dependent on burst length, which in turn is dependent on CS and CX (see  
Figures 5-1 and 5-2). With increasing CS, response time slows, while increasing levels of CS reduce response time.  
Figure 5-3 on page 19 shows the typical effects of CS and CX on response time.  
3.2  
Output Features  
The QT113B is designed for maximum flexibility and can accommodate most popular sensing requirements. These  
are selectable using strap options on pins OPT1 and OPT2. All options are shown inTable 3-1.  
Table 3-1. Output Mode Strap Options  
Max On  
Mode  
DC Out  
DC Out  
Toggle  
DC Out  
Tie Pin 3 to:  
Tie Pin 4 to:  
Duration  
Vdd  
Vdd  
10 s  
Vdd  
Gnd  
60 s  
Gnd  
Gnd  
10 s  
Gnd  
Vdd  
infinite  
QT113B [DATASHEET]  
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9525D–AT42–05/2013  
3.2.1 DC Mode Output  
The output of the QT113B can respond in a DC mode, where the output is active-low upon detection. The output will  
remain active-low for the duration of the detection, or until the Max On-Duration expires (if not infinite), whichever  
occurs first. If a max on-duration timeout occurs first, the sensor performs a full recalibration and the output becomes  
inactive until the next detection.  
Figure 3-2. Powering From a CMOS Port Pin  
PORT X.m  
0.01 μF  
CMOS  
microcontroller  
Vdd  
PORT X.n  
OUT  
QT113B  
Vss  
In this mode, three Max On-Duration timeouts are available: 10 seconds, 60 seconds, and infinite.  
Infinite timeout is useful in applications where a prolonged detection can occur and where the output must reflect the  
detection no matter how long. In infinite timeout mode, the designer should take care to be sure that drift in CS, CX,  
and Vdd do not cause the device to ‘stick on’ inadvertently even when the target object is removed from the sense  
field.  
3.2.2 Toggle Mode Output  
This makes the sensor respond in an on/off mode like a flip flop. It is most useful for controlling power loads, for  
example in kitchen appliances, power tools, light switches, and so on.  
Max On-Duration in Toggle mode is fixed at 10 seconds. When a timeout occurs, the sensor recalibrates but leaves  
the output toggle state unchanged.  
3.2.3 HeartBeat Output  
The QT113B output has a full-time HeartBeat health indicator superimposed on it. This operates by taking OUT into  
a 3-state mode for 300 µs once after every QT burst. This output state can be used to determine that the sensor is  
operating properly, or, it can be ignored using one of several simple methods.  
The HeartBeat indicator can be sampled by using a pulldown resistor on OUT, and feeding the resulting negative-  
going pulse into a counter, flip flop, one-shot, or other circuit. Since OUT is normally high, a pulldown resistor will  
create negative HeartBeat pulses (Figure 3-3) when the sensor is not detecting an object; when detecting an object,  
the output will remain low for the duration of the detection, and no HeartBeat pulse will be evident.  
QT113B [DATASHEET]  
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Figure 3-3. Getting HeartBeat pulses with a pull-down resistor  
+2.5 to 5 V  
HeartBeat Pulses  
1
VDD  
2
3
4
7
5
6
OUT  
SNS2  
GAIN  
SNS1  
Ro  
OPT1  
OPT2  
VSS  
8
If the sensor is wired to a microcontroller as shown in Figure 3-4, the microcontroller can reconfigure the load resistor  
to either ground or Vcc depending on the output state of the QT113B, so that the pulses are evident in either state.  
Figure 3-4. Using a micro to obtain HB pulses in either output state  
Ro  
Port_M.x  
Port_M.y  
3
4
1
OUT  
SNSK  
SNS  
Microcontroller  
6
SYNC/MODE  
Electromechanical devices like relays will usually ignore this short pulse. The pulse also has too low a duty cycle to  
visibly affect LED. It can be filtered completely if desired, by adding an RC time constant to filter the output, or if  
interfacing directly and only to a high-impedance CMOS input, by doing nothing or at most adding a small noncritical  
capacitor from Out to ground (Figure 3-5 on page 12).  
Figure 3-5. Eliminating HB Pulses  
GATE OR  
MICRO INPUT  
2
3
4
7
5
6
CMOS  
OUT  
SNS2  
GAIN  
SNS1  
C
o
100 pF  
OPT1  
OPT2  
QT113B [DATASHEET]  
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3.2.4 Output Drive  
The QT113B output is active low and can sink up to 5 mA of non-inductive current. If an inductive load is used, such  
as a small relay, the load should be diode clamped to prevent damage. When set to operate in a proximity mode (at  
high gain) the current should be limited to 1 mA to prevent gain shifting side effects from occurring, which happens  
when the load current creates voltage drops on the die and bonding wires; these small shifts can materially influence  
the signal level to cause detection instability as described below.  
Care should be taken when the QT113B and the load are both powered from the same supply, and the supply is  
minimally regulated. The QT113B derives its internal references from the power supply, and sensitivity shifts can  
occur with changes in Vdd, as happens when loads are switched on. This can induce detection ‘cycling’, whereby an  
object is detected, the load is turned on, the supply sags, the detection is no longer sensed, the load is turned off, the  
supply rises and the object is reacquired, ad infinitum. To prevent this occurrence, the output should only be lightly  
loaded if the device is operated from an unregulated supply, such as batteries. Detection ‘stiction’, the opposite  
effect, can occur if a load is shed when Out is active.  
The output of the QT113B can directly drive a resistively limited LED. The LED should be connected with its cathode  
to the output and its anode towards Vcc, so that it lights when the sensor is active. If desired the LED can be  
connected from Out to ground, and driven on when the sensor is inactive.  
QT113B [DATASHEET]  
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4.  
Circuit Guidelines  
4.1  
Sample capacitor  
Charge sampler CS can be virtually any plastic film or medium-K ceramic capacitor. The acceptable CS range is from  
10 nF to 500 nF depending on the sensitivity required; larger values of CS demand higher stability to ensure reliable  
sensing. Acceptable capacitor types include PPS film, polypropylene film, NPO/C0G ceramic, and X7R ceramic.  
4.2  
4.3  
Option Strapping  
The option pins OPT1 and OPT2 should never be left floating. If they are floated, the device will draw excess power  
and the options will not be properly read on power-up. Intentionally, there are no pull-up resistors on these lines,  
since pull-up resistors add to power drain if tied low.  
The Gain input should be connected to either Vdd or Gnd.  
Table 2-1 on page 7 and Table 3-1 on page 10 show the option strap configurations available.  
Power Supply, PCB Layout  
The power supply can range from 2.5 V to 5.0 V. At 3 V, current drain averages less than 600 µA in most cases, but  
can be higher if CS is large. Increasing CX values will actually decrease power drain. Operation can be from batteries,  
but be cautious about loads causing supply droop (see “Output Drive” on page 13).  
As battery voltage sags with use or fluctuates slowly with temperature, the QT113B will track and compensate for  
these changes automatically with only minor changes in sensitivity.  
If the power supply is shared with another electronic system, care should be taken to assure that the supply is free of  
digital spikes, sags, and surges which can adversely affect the QT113B. The QT113B will track slow changes in Vdd,  
but it can be affected by rapid voltage steps.  
if desired, the supply can be regulated using a conventional low current regulator, for example CMOS regulators that  
have low quiescent currents. Bear in mind that such regulators generally have very poor transient line and load  
stability; in some cases, shunting Vdd to Vss with a 4.7 kresistor to induce a continuous current drain can have a  
very positive effect on regulator performance.  
Parts placement: The chip should be placed to minimize the SNS2 trace length to reduce low frequency pickup, and  
to reduce stray CX which degrades gain. The CS and Rseries resistors (see Figure 1-1 on page 3) should be placed as  
close to the body of the chip as possible so that the SNS2 trace between Rseries and the SNS2 pin is very short,  
thereby reducing the antenna-like ability of this trace to pick up high frequency signals and feed them directly into the  
chip.  
For best EMC performance the circuit should be made entirely with SMT components.  
SNS trace routing: Keep the SNS2 electrode trace (and the electrode itself) away from other signal, power, and  
ground traces including over or next to ground planes. Adjacent switching signals can induce noise onto the sensing  
signal; any adjacent trace or ground plane next to or under either SNS trace will cause an increase in CX load and  
desensitize the device.  
For proper operation a 100 nF ceramic bypass capacitor must be used directly between Vdd and Vss; the bypass  
cap should be placed very close to the device power pins.  
QT113B [DATASHEET]  
14  
9525D–AT42–05/2013  
4.4  
ESD Protection  
The QT113B includes internal diode protection on its pins to absorb and protect the device from most induced  
discharges, up to 20 mA. The electrode should always be insulated against direct ESD; a glass or plastic panel is  
usually enough as a barrier to ESD. Glass breakdown voltages are typically over 10 kV / mm thickness.  
ESD protection can be enhanced by adding a series resistor Rseries (see Figure 1-1 on page 3) in line with the  
electrode, of value between 1 kand 50 k. The optimal value depends on the amount of load capacitance CX; a  
high value of CX means Rseries has to be low. The pulse waveform on the electrode should be observed on an  
oscilloscope, and the pulse should look very flat just before the falling edge. If the pulse voltage never flattens, the  
gain of the sensor is reduced and there can be sensing instabilities.  
Rseries and CS should both be placed very close to the chip.  
The use of semiconductor transient protection devices, Zeners, or MOVs on the sense lead is not advised; these  
devices have extremely large amounts of parasitic capacitance which will swamp the QT113B and render it unstable  
or diminish gain.  
4.5  
EMC Issues  
External AC fields (EMI) due to RF transmitters or electrical noise sources can cause false detections or unexplained  
shifts in sensitivity.  
The influence of external fields on the sensor is reduced by means of the Rseries described above in Section 4.4. The  
CS capacitor and Rseries (see Figure 1-1 on page 3) form a natural low-pass filter for incoming RF signals; the roll-off  
frequency of this network is defined by:  
1
--------------------------------------  
F
=
R
2  R  
C  
S
series  
If, for example, CS = 22 nF, and Rseries = 10 k, the roll-off frequency to EMI is 723 Hz, vastly lower than any credible  
external noise source (except for mains frequencies). However, Rseries and CS must both be placed very close to the  
body of the IC so that the lead lengths between them and the IC do not form an unfiltered antenna at very high  
frequencies.  
QT113B [DATASHEET]  
15  
9525D–AT42–05/2013  
5.  
Specifications  
5.1  
Absolute Maximum Specifications  
Vdd  
–0.5 V to +6.0 V  
±40 mA  
Max continuous pin current, any control or drive pin  
Short circuit duration to ground, any pin  
Short circuit duration to Vdd, any pin  
Voltage forced onto any pin  
infinite  
infinite  
–0.6 V to (Vdd +0.6) V  
CAUTION: Stresses beyond those listed under Absolute Maximum Specifications may cause permanent damage to  
the device. This is a stress rating only and functional operation of the device at these or other conditions beyond those  
indicated in the operational sections of this specification is not implied. Exposure to absolute maximum specification  
conditions for extended periods may affect device reliability  
5.2  
Recommended Operating Conditions  
Operating temp  
Storage temp  
–40°C to +85°C  
–55°C to +125°C  
+2.45 V to 5.5 V  
±5 mV p-p max  
±100 mV  
Vdd  
Short-term supply ripple + noise  
Long-term supply stability  
CS value  
10 nF to 500 nF  
0 to 100 pF  
CX transverse load capacitance per channel  
5.3  
DC Specifications  
Vdd = 3.0 V, CS = 10 nF, CX = 5 pF; Ta = recommended range, unless otherwise noted  
Parameter  
Description  
Min  
Typ  
Max  
Units  
Notes  
Idd  
Supply current  
–
1.0  
2.5  
mA  
Required for proper  
startup  
Vdds  
Supply turn-on slope  
100  
–
–
V/s  
Vil  
Vhl  
Vol  
Voh  
Low input logic level  
High input logic level  
Low output voltage  
High output voltage  
–
–
–
–
–
0.2 × Vdd  
V
V
V
V
OPT1, OPT2  
OPT1, OPT2  
0.9 × Vdd  
–
–
0.6  
–
OUT, 4 mA sink  
OUT, 1 mA source  
Vdd – 0.7  
QT113B [DATASHEET]  
16  
9525D–AT42–05/2013  
Parameter  
Description  
Min  
–
Typ  
–
Max  
±1  
Units  
µA  
Notes  
Iil  
Ar  
S
Input leakage current  
Acquisition resolution  
Sensitivity range (1)  
OPT1, OPT2  
–
9
14  
bits  
fF  
1,000  
–
10  
See Note  
1. Sensitivity depends on value of CX and CS. Refer to Figures 4-1, 4-2  
5.4  
Timing Specification  
Parameter Description  
Min  
–
Typ  
330  
1.95  
2.9  
–
Max  
–
Units  
Notes  
CS, CX dependent  
TRC  
Tpc  
Tpt  
Tbs  
Tbl  
Tr  
Recalibration time  
Charge-transfer duration  
CX reset duration  
Burst spacing interval  
Burst length  
ms  
µs  
–
–
–
–
µs  
4.9  
3.1  
–
156  
154  
–
ms  
ms  
ms  
µs  
CS = 10nF to 500nF; CX = 0  
CS = 10nF to 500nF; CX = 0  
CX = 10pF; See Figure 5-3  
–
Response time  
30  
Thb  
Fq  
Heartbeat pulse width  
Burst frequency  
–
310  
172  
–
–
–
kHz  
QT113B [DATASHEET]  
17  
9525D–AT42–05/2013  
5.5  
Signal Processing  
Description  
Min  
Typ  
6 or 12  
17  
Max  
Units  
counts  
%
Notes  
Threshold differential  
Option pin selected  
Hysteresis  
Percentage of signal threshold  
Consensus filter length  
3
samples  
ms/level  
ms/level  
s
Positive drift compensation rate  
Negative drift compensation rate  
Post-detection recalibration timer duration  
–
–
1000  
100  
60  
–
–
10  
infinite  
Option pin selected  
Figure 5-1. Typical Threshold Sensitivity against. CX, High Gain, at Selected Values of CS; Vdd = 3.0 V  
10  
1
Cs = 10 nF  
Cs = 20 nF  
0.1  
Cs = 50 nF  
Cs = 100 nF  
0.01  
Cs = 200 nF  
Cs = 500 nF  
0.001  
0
10  
40  
20  
30  
Cx Load (pF)  
Figure 5-2. Typical Threshold Sensitivity against CX, Low Gain, at Selected Values of CS; Vdd = 3.0 V  
10  
1
Cs = 10 nF  
Cs = 20 nF  
0.1  
Cs = 50 nF  
Cs = 100 nF  
0.01  
Cs = 200 nF  
Cs = 500 nF  
0.001  
0
10  
40  
20  
30  
Cx Load (pF)  
QT113B [DATASHEET]  
18  
9525D–AT42–05/2013  
Figure 5-3. Typical Response Time against CX; Vdd = 3.0 V  
1000  
100  
Cs = 10 nF  
Cs = 20 nF  
Cs = 50 nF  
Cs = 100 nF  
Cs = 200 nF  
Cs = 500 nF  
10  
1
0
10  
40  
20  
30  
Cx Load (pF)  
QT113B [DATASHEET]  
19  
9525D–AT42–05/2013  
5.6  
Mechanical Dimensions  
1
E
E1  
L
N
Ø
TOP VIEW  
END VIEW  
e
b
COMMON DIMENSIONS  
(Unit of Measure = mm)  
A
MIN  
1.35  
0.10  
MAX  
1.75  
0.25  
NOM  
–
–
NOTE  
SYMBOL  
A1  
A
A1  
b
0.31  
0.17  
4.80  
3.81  
5.79  
–
0.51  
0.25  
5.05  
3.99  
6.20  
C
D
E1  
E
e
–
–
D
–
–
SIDE VIEW  
Notes: This drawing is for general information only.  
Refer to JEDEC Drawing MS-012, Variation AA  
for proper dimensions, tolerances, datums, etc.  
1.27 BSC  
L
0.40  
0°  
–
–
1.27  
8°  
Ø
6/22/11  
DRAWING NO. REV.  
8S1  
TITLE  
GPC  
8S1, 8-lead (0.150” Wide Body), Plastic Gull Wing  
Small Outline (JEDEC SOIC)  
SWB  
G
Package Drawing Contact:  
packagedrawings@atmel.com  
QT113B [DATASHEET]  
20  
9525D–AT42–05/2013  
5.7  
Marking  
Shortened Part  
number  
QT113B  
1R0  
Code Revision  
1.0, Released  
YYWW = Date Code  
(Variable Text)  
YYWW  
Pin 1 ID  
5.8  
5.9  
Part Numbers  
Part Number  
QT113B-ISG  
QS Number  
QS403  
Description  
8-pin DIL SOIC – Tape and Reel  
Moisture Sensitivity Level (MSL)  
0
MSL Rating  
Peak Body Temperature  
260oC  
Specifications  
MSL3  
IPC/JEDEC J-STD-020  
QT113B [DATASHEET]  
21  
9525D–AT42–05/2013  
Associated Documents  
QTAN0079 – Buttons, Sliders and Wheels Touch Sensors Design Guide  
QTAN0087 – Proximity Design Guide  
Atmel AVR3000: QTouch Conducted Immunity Application Note  
Revision History  
Revision No.  
History  
Initial release.  
Revision A – February 2009  
Address information on back page updated.  
Regulator information removed.  
Orderable part number corrected.  
This version of datasheet not issued.  
QProx changed from QProx™ to QProx®.  
Copyright updated.  
Revision B – September 2010  
Revision C – June 2011  
Revision D – May 2013  
Applied new template.  
Updated document title.  
Updated “Features” on page 1.  
Updated part number description in “Part Numbers” on page 21.  
QT113B [DATASHEET]  
22  
9525D–AT42–05/2013  
Notes  
QT113B [DATASHEET]  
23  
9525D–AT42–05/2013  
Atmel Corporation  
Atmel Asia Limited  
Atmel München GmbH  
Atmel Japan G.K.  
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Unit 01-5 & 16, 19F  
Business Campus  
16F Shin-Osaki Kangyo Bldg  
San Jose, CA 95110  
USA  
BEA Tower, Millennium City 5  
418 Kwun Tong Roa  
Kwun Tong, Kowloon  
HONG KONG  
Parkring 4  
1-6-4 Osaki, Shinagawa-ku  
Tokyo 141-0032  
D-85748 Garching bei München  
GERMANY  
Tel: (+1) (408) 441-0311  
Fax: (+1) (408) 487-2600  
www.atmel.com  
JAPAN  
Tel: (+49) 89-31970-0  
Fax: (+49) 89-3194621  
Tel: (+81) (3) 6417-0300  
Fax: (+81) (3) 6417-0370  
Tel: (+852) 2245-6100  
Fax: (+852) 2722-1369  
© 2013 Atmel Corporation. All rights reserved. / Rev.: 9525D–AT42–05/2013  
Atmel®, Atmel logo and combinations thereof, Enabling Unlimited Possibilities®, Adjacent Key Suppression®, AKS®, QTouch® and others are registered  
trademarks or trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be registered trademarks or trademarks of others.  
Disclaimer: The information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this  
document or in connection with the sale of Atmel products. EXCEPT AS SET FORTH IN THE ATMEL TERMS AND CONDITIONS OF SALES LOCATED ON THE ATMEL WEBSITE, ATMEL  
ASSUMES NO LIABILITY WHATSOEVER AND DISCLAIMS ANY EXPRESS, IMPLIED OR STATUTORY WARRANTY RELATING TO ITS PRODUCTS INCLUDING, BUT NOT LIMITED TO, THE  
IMPLIED WARRANTY OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT. IN NO EVENT SHALL ATMEL BE LIABLE FOR ANY DIRECT, INDIRECT,  
CONSEQUENTIAL, PUNITIVE, SPECIAL OR INCIDENTAL DAMAGES (INCLUDING, WITHOUT LIMITATION, DAMAGES FOR LOSS AND PROFITS, BUSINESS INTERRUPTION, OR LOSS OF  
INFORMATION) ARISING OUT OF THE USE OR INABILITY TO USE THIS DOCUMENT, EVEN IF ATMEL HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES. Atmel makes no  
representations or warranties with respect to the accuracy or completeness of the contents of this document and reserves the right to make changes to specifications and products descriptions at any  
time without notice. Atmel does not make any commitment to update the information contained herein. Unless specifically provided otherwise, Atmel products are not suitable for, and shall not be  
used in, automotive applications. Atmel products are not intended, authorized, or warranted for use as components in applications intended to support or sustain life.  
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