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8TQ

型号：

8TQ

描述：

肖特基整流器器[ SCHOTTKY RECTIFIER ]

品牌：

INFINEON[ Infineon ]

页数：

7 页

PDF大小：

135 K

下载PDF手册

Bulletin PD-20561 rev. D 07/03

8TQ...

8TQ...S

8 Amp

SCHOTTKY RECTIFIER

I_F(AV)= 8 Amp

V_R= 80 - 100V

Major Ratings and Characteristics

Description/ Features

The8TQ Schottkyrectifierserieshasbeenoptimizedfor low

reverse leakage at high temperature. The proprietary barrier

technology allows for reliable operation up to 175° C junction

temperature. Typical applications are in switching power

supplies, converters, free-wheeling diodes, and reverse

battery protection.

Characteristics

8TQ

Units

Rectangular

waveform

F(AV)

range

80 -100

850

RRM

175° C T operation

High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

@tp=5µssine

FSM

Low forward voltage drop

High frequency operation

@8Apk, T =125°C

0.58

Guard ring for enhanced ruggedness and long term

range

-55to175

°C

reliability

Case Styles

8TQ...

8TQ... S

D²PAK

TO-220

www.irf.com

8TQ... Series

Bulletin PD-20561 rev. D 07/03

Voltage Ratings

Part number

8TQ080

8TQ100

V_R

Max. DC Reverse Voltage (V)

100

V_RWMMax. Working Peak Reverse Voltage (V)

Absolute Maximum Ratings

Parameters

I_F(AV)Max. Average Forward Current

*SeeFig.5

8TQ Units

Conditions

50%dutycycle@T_C=157°C,rectangularwaveform

Following any rated

load condition and

I_FSMMax. PeakOneCycleNon-Repetitive

SurgeCurrent *SeeFig.7

850

230

5µs Sineor3µsRect.pulse

10msSineor6msRect. pulse

with rated V_RRMapplied

E_ASNon-Repetitive Avalanche Energy

7.50

0.50

T_J=25°C, I_AS= 0.50Amps,L= 60mH

Currentdecayinglinearlytozeroin1µsec

FrequencylimitedbyT_Jmax.V_A=1.5xV_Rtypical

I_AR

Repetitive Avalanche Current

Electrical Specifications

Parameters

8TQ Units

Conditions

V_FMMax. Forward Voltage Drop

(1)

0.72

0.88

0.58

0.69

@ 16A

T_J= 25 °C

* See Fig. 1

@ 16A

T_J= 125 °C

I_RMMax. Reverse Leakage Current (1)

* See Fig. 2

0.55

500

T_J= 25 °C

T_J= 125 °C

V_R= rated V_R

C_T

L_S

Max. Junction Capacitance

Typical Series Inductance

V_R= 5V_DC(test signal range 100Khz to 1Mhz) 25 °C

Measured lead to lead 5mm from package body

dv/dt Max. Voltage Rate of Change

(Rated V_R)

10000

V/ µs

(1) Pulse Width < 300µs, Duty Cycle < 2%

Thermal-Mechanical Specifications

Parameters

8TQ Units

Conditions

T_J

Max. Junction Temperature Range -55to175 °C

T_stgMax. Storage Temperature Range

-55to175 °C

R_thJCMax. Thermal Resistance Junction

toCase

2.0

°C/W DC operation *SeeFig.4

R_thCSTypicalThermalResistance, Caseto

Heatsink

0.50

°C/W Mountingsurface, smoothandgreased

Approximate Weight

Mounting Torque

2(0.07) g(oz.)

Min.

Max.

6(5)

Kg-cm

(Ibf-in)

12(10)

www.irf.com

8TQ... Series

Bulletin PD-20238 rev. D 07/03

100

1000

100

T = 175°C

150°C

125°C

100°C

75°C

50°C

0.1

0.01

0.001

0.0001

25°C

100

Reverse Voltage - V (V)

T = 175°C

Fig.2-Typical Values of Reverse Current

T = 125°C

Vs. Reverse Voltage

T = 25°C

1000

T = 25°C

0.1

100

0.2 0.4 0.6 0.8

1.2 1.4 1.6 1.8

2.2

10 20 30 40 50 60 70 80 90 100110

Forward Voltage Drop - V

(V)

Reverse Voltage - V (V)

Fig. 1-Maximum Forward Voltage Drop Characteristics

Fig.3-Typical Junction Capacitance

Vs. Reverse Voltage

D = 0.75

D = 0.50

0.1

D = 0.33

D = 0.25

D = 0.20

Notes:

0.01

1. Duty factor D = t / t

Single Pulse

(The rma l Re sist a nc e )

2. Peak T = P_DMx Z

+ T

thJC

0.001

0.00001

0.0001

0.001

0.01

0.1

100

, Rectangular Pulse Duration (Seconds)

Fig.4-Maximum Thermal Impedance Z_thJCCharacteristics

www.irf.com

8TQ... Series

Bulletin PD-20561 rev. D 07/03

180

175

170

165

D = 0.20

D = 0.25

D = 0.33

D = 0.50

D = 0.75

160

RMS Lim it

Square wave (D = 0.50)

155

150

145

140

80%Rated V applied

see note (2)

(A)

Average Forward Current - I

(A)

Average Forward Current - I

F( AV)

F(AV)

Fig. 5-Maximum Allowable Case Temperature

Fig.6-Forward Power Loss Characteristics

Vs. Average Forward Current

1000

At Any Rated Load Condition

And With Rated V

Applied

RRM

Following Surge

100

1000

10000

Square Wave Pulse Duration - t (microsec)

Fig. 7-Maximum Non-Repetitive Surge Current

HIG H-SPEED

SW ITC H

IRFP460

DUT

FREE-WHEEL

DIODE

Rg = 25 ohm

Vd = 25 Volt

C URRENT

MONITOR

40HFL40S02

Fig.8-Unclamped Inductive Test Circuit

(2) Formulaused:T_C=T_J-(Pd+Pd_REV)xR_thJC

;

Pd=ForwardPowerLoss=I_F(AV)xV_FM@(I_F(AV)/D) (seeFig.6);

Pd_REV=InversePowerLoss=V_R1xI_R(1-D); I_R@V_R1=80%ratedV_R

www.irf.com

8TQ... Series

Bulletin PD-20238 rev. D 07/03

Outline Table

10.54 (0.41)

MAX.

1.32 (0.05)

1.22 (0.05)

3.78 (0.15)

3.54 (0.14)

DIA.

6.48 (0.25)

6.23 (0.24)

2.92 (0.11)

2.54 (0.10)

TERM 2

15.24 (0.60)

14.84 (0.58)

2°

14.09 (0.55)

13.47 (0.53)

3.96 (0.16)

3.55 (0.14)

Base

Cathode

0.10 (0.004)

2.04 (0.080) MAX.

1.40 (0.05)

1.15 (0.04)

2.89 (0.11)

2.64 (0.10)

0.94 (0.04)

0.69 (0.03)

Cathode

Anode

0.61 (0.02) MAX.

4.57 (0.18)

4.32 (0.17)

5.08 (0.20) REF.

Conform to JEDEC outline TO-220AC

Dimensions in millimeters and (inches)

4.69 (0.18)

4.20 (0.16)

10.16 (0.40)

REF.

1.32 (0.05)

1.22 (0.05)

6.47 (0.25)

6.18 (0.24)

93°

15.49 (0.61)

14.73 (0.58)

5.28 (0.21)

4.78 (0.19)

2.61 (0.10)

2.32 (0.09)

8.89 (0.35)

REF.

0.55 (0.02)

0.46 (0.02)

1.40 (0.055)

1.14 (0.045)

0.93 (0.37)

0.69 (0.27)

MINIMUM RECOMMENDED FOOTPRINT

11.43 (0.45)

Base

Cathode

4.57 (0.18)

4.32 (0.17)

8.89 (0.35)

17.78 (0.70)

0.61 (0.02) MAX.

5.08 (0.20) REF.

3.81 (0.15)

2.08 (0.08)

Anode

N/C

2.54 (0.10)

Conform to JEDEC outline D²Pak (SMD-220)

Dimensions in millimeters and (inches)

www.irf.com

8TQ... Series

Bulletin PD-20561 rev. D 07/03

Ordering Information Table

Device Code

100

Essential Part Number

T = TO-220

Q = Schottky Q Series

Voltage Rating

S = D²Pak

080 = 80V

100 = 100V

8TQ100

********************************************

This model has been developed by

Wizard SPICE MODEL GENERATOR (1999)

(International Rectifier Corporation)

Contain Proprietary Information

********************************************

* SPICE Model Diode is composed by a

* simple diode plus paralled VCG2T

********************************************

.SUBCKT 8TQ100 ANO CAT

D1 ANO 1 DMOD (0.07089)

*Define diode model

.MODEL DMOD D(IS=1.15938021883115E-03A,N=1.95244918720315,BV=120V,

+ IBV=5.37891460505463A,RS= 0.00127602,CJO=9.9895753025115E-09,

+ VJ=2.30070034831946,XTI=2, EG=0.758916909331649)

********************************************

*Implementation of VCG2T

VX 1 2 DC 0V

R1 2 CAT TRES 1E-6

.MODEL TRES RES(R=1,TC1=-90.2420977904848)

GP1 ANO CAT VALUE={-ABS(I(VX))*(EXP((((1.635248E-02/-90.2421)*((V(2,CAT)*1E6)/(I(VX)+1E-6)-

1))+1)*4.011038E-03*ABS(V(ANO,CAT)))-1)}

********************************************

.ENDS 8TQ100

Thermal Model Subcircuit

.SUBCKT 8TQ100 5 1

CTHERM1

CTHERM2

CTHERM3

CTHERM4

1.45E+00

4.54E+00

1.09E+01

1.01E+02

RTHERM1

RTHERM2

RTHERM1

2.49E+00

5.20E-04

5.43E-01

3.05E-02

.ENDS 8TQ100

www.irf.com

8TQ... Series

Bulletin PD-20238 rev. D 07/03

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level.

Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7309

Visit us at www.irf.com for sales contact information. 07/03

www.irf.com

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