SOT23 SILICON DUAL
ZDC833A
VARIABLE CAPACITANCE DIODE
ISSUE 2 – JANUARY 1998
FEATURES
* VHF to UHF operation
* Common Cathode Dual Diode
* Monolithic construction
PIN CONFIGURATION
1
2
1
3
APPLICATIONS
* Mobile radios and Pagers
* Cellular telephones
* Voltage controlled Crystal Oscillators
2
3
SOT23
PARTMARKING DETAIL ZDC833A – C2A
ABSOLUTE MAXIMUM RATINGS.(Each Diode)
PARAMETER
SYMBOL
VALUE
200
UNIT
mA
mW
°C
Forward Current
IF
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
330
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C ). (Each Diode)
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Reverse Breakdown
Voltage
VBR
25
V
I
R = 10µA
Reverse Leakage
Current
IR
0.2
33
10
VR = 20V
nA
Temperature
Coefficient
400
ppm/°C
pF
VR = 3V, f=1MHz
η
Diode Capacitance
Capacitance Ratio
Figure of Merit
Cd
29.7
5.0
36.3
6.5
VR = 2V, f=1MHz
C
d / Cd
VR = 2V/20V, f=1MHz
Q
200
VR = 3V, f=50MHz
