SM-8 DUAL PNP MEDIUM POWER
ZDT1147
HIGH GAIN TRANSISTORS
ISSUE 1 - AUGUST 1997
B1
E1
B2
E2
C1
C1
C2
C2
SM-8
(8 LEAD SOT223)
PARTMARKING DETAIL – ZDT1147
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
-15
-12
V
-5
-20
V
A
Continuous Collector Current
Base Current
IC
-5
A
IB
-500
mA
°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Ptot
VALUE
UNIT
Total Power Dissipation at Tamb = 25°C*
Any single die “on”
Both die “on” equally
2.0
2.75
W
W
Derate above 25°C*
Any single die “on”
Both die “on” equally
18
22
mW/ °C
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
55.6
45.5
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
