NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 2 MARCH 1994
ZTX457
FEATURES
*
*
*
300 Volt VCEO
0.5 Amp continuous current
Ptot= 1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
300
Collector-Emitter Voltage
Emitter-Base Voltage
300
V
5
V
Peak Pulse Current
1
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
500
1
mA
W
°C
Ptot
Tj:Tstg
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
V(BR)CBO 300
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
V
V
IC=100µA, IE=0
IC=10mA, IB=0*
IE=100µA
Collector-Emitter
Breakdown Voltage
VCEO(sus) 300
Emitter-Base
Breakdown Voltage
V(BR)EBO
ICBO
5
Collector Cut-Off
Current
100
10
nA
µA
V
CB=200V
VCB=200V, Tamb=100°C
Emitter Cut-Off Current IEBO
100
0.3
nA
V
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
VBE(on)
IC=100mA, IB=10mA*
Base-Emitter
Saturation Voltage
1
1
V
V
IC=100mA, IB=10mA*
IC=100mA, VCE=10V*
Base-Emitter
Turn On Voltage
Static Forward Current hFE
Transfer Ratio
50
50
25
IC=10mA, VCE=10V*
IC=50mA, VCE=10V*
IC=100mA, VCE=10V*
300
Transition Frequency
fT
75
MHz
IC=50mA, VCE=10V
f=20MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-181
