PNP SILICON PLANAR
ZTX754
ZTX755
MEDIUM POWER TRANSISTORS
ISSUE 2 JULY 94
FEATURES
*
*
*
*
150 Volt VCEO
1 Amp continuous current
Low saturation voltage
Ptot= 1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
ZTX754
-125
ZTX755
-150
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-125
-150
V
-5
-2
-1
1
V
Peak Pulse Current
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
A
Ptot
W
°C
Tj:Tstg
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
ZTX754
ZTX755
UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-125
-125
-5
-150
-150
-5
V
V
V
IC=-100µA, IE=0
IC=-10mA, IB=0*
IE=-100µA, IC=0
VCB=-100V, IE=0
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
-100
-100
nA
nA
-100
-100
VCB=-125V, IE=0
Emitter Cut-Off
Current
IEBO
nA
VEB=-3V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
-0.5
-0.5
-0.5
-0.5
V
V
IC=-500mA, IB=-50mA*
IC=-1A, IB=-200mA*
Base-Emitter
Saturation Voltage
-1.1
-1.1
V
IC=-500mA, IB=-50mA*
Base-Emitter Turn-On VBE(on)
Voltage
-1.0
-1.0
V
IC=-500mA, VCE=-5V*
Static Forward
Current Transfer Ratio
hFE
50
50
20
50
50
20
IC=-10mA, VCE=-5V
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
Transition Frequency fT
Output Capacitance Cobo
30
30
MHz
pF
IC=-10mA, VCE=-20V
f=20MHz
20
20
VCB=-20V, f=1MHz
3-263
