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UZXM61P03FTC

型号：

UZXM61P03FTC

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

7 页

PDF大小：

264 K

下载PDF手册
ZXM61P03F  
30V P-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
V(BR)DSS=-30V; RDS(ON)=0.35⍀; ID=-1.1A  
DESCRIPTION  
This new generation of high density MOSFETs from Zetex utilizes a unique  
structure that combines the benefits of low on-resistance with fast switching  
speed. This makes them ideal for high efficiency, low voltage, power  
management applications.  
FEATURES  
• Low on-resistance  
SOT23  
• Fast switching speed  
• Low threshold  
• Low gate drive  
• SOT23 package  
APPLICATIONS  
• DC - DC converters  
• Power management functions  
• Disconnect switches  
• Motor control  
ORDERING INFORMATION  
Pin out  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH  
(mm)  
QUANTITY  
PER REEL  
ZXM61P03FTA  
ZXM61P03FTC  
7
8 embossed  
8 embossed  
3,000  
13  
10,000  
DEVICE MARKING  
P03  
Top view  
ISSUE 1 - OCTOBER 2005  
SEMICONDUCTORS  
1
ZXM61P03F  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
LIMIT  
-30  
UNIT  
Drain-Source Voltage  
V
V
V
V
DSS  
GS  
Gate- Source Voltage  
Ϯ20  
Continuous Drain Current  
(V =-10V; T =25°C)(b)  
I
-1.1  
-0.9  
A
GS  
A
D
(V =-10V; T =70°C)(b)  
GS  
A
Pulsed Drain Current (c)  
I
I
I
-4.3  
-0.88  
-4.3  
A
A
A
DM  
S
Continuous Source Current (Body Diode)(b)  
Pulsed Source Current (Body Diode)(c)  
SM  
Power Dissipation at T =25°C (a)  
A
Linear Derating Factor  
P
625  
5
mW  
mW/°C  
D
Power Dissipation at T =25°C (b)  
A
Linear Derating Factor  
P
806  
6.4  
mW  
mW/°C  
D
Operating and Storage Temperature Range  
T :T  
-55 to +150  
°C  
j
stg  
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
VALUE  
200  
UNIT  
°C/W  
°C/W  
Junction to Ambient (a)  
Junction to Ambient (b)  
NOTES:  
R
R
θJA  
θJA  
155  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions  
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.  
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.  
ISSUE 1 - OCTOBER 2005  
SEMICONDUCTORS  
2
ZXM61P03F  
CHARACTERISTICS  
ISSUE 1 - OCTOBER 2005  
SEMICONDUCTORS  
3
ZXM61P03F  
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT CONDITIONS.  
STATIC  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
V
I
-30  
V
I =-250µA, V =0V  
(BR)DSS  
D
GS  
-1  
V
=-30V, V =0V  
DS GS  
µA  
nA  
V
DSS  
GSS  
I
V
=Ϯ20V, V =0V  
Ϯ100  
GS  
DS  
Gate-Source Threshold Voltage  
Static Drain-Source On-State Resistance (1)  
V
R
-1.0  
I =-250µA, V = V  
GS(th)  
DS(on)  
DS  
GS  
D
0.35  
0.55  
V
V
=-10V, I =-0.6A  
Ω
Ω
GS  
GS  
D
=-4.5V, I =-0.3A  
D
Forward Transconductance (3)  
DYNAMIC (3)  
g
0.44  
S
V
=-10V,I =-0.3A  
D
fs  
DS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING(2) (3)  
Turn-On Delay Time  
Rise Time  
C
C
C
140  
45  
pF  
pF  
pF  
iss  
V
=-25 V, V =0V,  
DS  
GS  
f=1MHz  
oss  
rss  
20  
t
t
t
t
1.9  
2.9  
8.9  
5.0  
ns  
ns  
ns  
ns  
nC  
d(on)  
V
=-15V, I =-0.6A  
D
r
DD  
G
R =6.2Ω, R =25Ω  
(Refer to test circuit)  
D
Turn-Off Delay Time  
Fall Time  
d(off)  
f
Total Gate Charge  
Gate-Source Charge  
Gate Drain Charge  
SOURCE-DRAIN DIODE  
Diode Forward Voltage (1)  
Q
Q
Q
4.8  
g
V
=-24V,V =-10V,  
GS  
DS  
0.62 nC  
ID=-0.6A  
gs  
gd  
(Refer to test circuit)  
1.3  
nC  
V
V
-0.95  
T =25°C, I =-0.6A,  
j S  
V
SD  
=0V  
GS  
Reverse Recovery Time (3)  
Reverse Recovery Charge(3)  
NOTES:  
t
14.8  
7.7  
ns  
T =25°C, I =-0.6A,  
j F  
di/dt= 100A/µs  
rr  
Q
nC  
rr  
(1) Measured under pulsed conditions. Width=300µs. Duty cycle Յ2%.  
(2) Switching characteristics are independent of operating junction temperature.  
(3) For design aid only, not subject to production testing.  
ISSUE 1 - OCTOBER 2005  
SEMICONDUCTORS  
4
ZXM61P03F  
TYPICAL CHARACTERISTICS  
ISSUE 1 - OCTOBER 2005  
SEMICONDUCTORS  
5
ZXM61P03F  
TYPICAL CHARACTERISTICS  
14  
300  
250  
Vgs=0V  
ID=-0.6A  
f=1MHz  
12  
10  
8
Ciss  
Coss  
Crss  
200  
150  
100  
50  
VDS=-24V  
VDS=-15V  
6
4
2
0
0
0.1  
1
10  
100  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-V - Drain Source Voltage (V)  
DS  
Q -Charge (nC)  
Capacitance v Drain-Source Voltage  
Gate-Source Voltage v Gate Charge  
Current  
regulator  
QG  
50k  
Same as  
D.U.T  
12V  
QGS  
QGD  
VG  
VDS  
IG  
D.U.T  
ID  
VGS  
Charge  
Basic gate charge waveform  
Gate charge test circuit  
VDS  
90%  
RD  
VGS  
VDS  
RG  
VCC  
10%  
VGS  
tr  
td(off)  
tr  
td(on)  
t(on)  
t(on)  
Switching time waveforms  
Switching time test circuit  
ISSUE 1 - OCTOBER 2005  
SEMICONDUCTORS  
6
ZXM61P03F  
PACKAGE DETAILS  
PAD LAYOUT DETAILS  
L
0.95  
0.037  
H
G
N
D
3 leads  
2.0  
0.079  
A
0.9  
M
B
0.035  
C
mm  
inches  
0.8  
0.031  
K
F
PACKAGE DIMENSIONS  
Millimeters  
DIM  
Inches  
Millimeters  
Inches  
Max  
DIM  
Min  
2.67  
1.20  
ᎏ
Max  
3.05  
1.40  
1.10  
0.53  
0.15  
Min  
0.105  
0.047  
ᎏ
Max  
0.120  
0.055  
0.043  
0.021  
Min  
0.33  
0.01  
2.10  
0.45  
Max  
0.51  
0.10  
2.50  
0.64  
Max  
0.020  
0.004  
0.0985  
0.025  
A
B
C
D
F
H
K
0.013  
0.0004  
0.083  
0.018  
L
0.37  
0.085  
0.015  
M
N
ᎏ
0.0034 0.0059  
0.075 NOM  
0.95 NOM  
0.0375 NOM  
G
1.90 NOM  
ᎏ
ᎏ
© Zetex Semiconductors plc 2005  
Europe  
Americas  
Asia Pacific  
Zetex (Asia) Ltd  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
Corporate Headquarters  
Zetex GmbH  
Zetex Inc  
Zetex Semiconductors plc  
Zetex Technology Park  
Chadderton, Oldham, OL9 9LL  
United Kingdom  
Streitfeldstraße 19  
D-81673 München  
Germany  
700 Veterans Memorial Hwy  
Hauppauge, NY 11788  
USA  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
These offices are supported by agents and distributors in major countries world-wide.  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product information, log on to www.zetex.com  
ISSUE 1 - OCTOBER 2005  
SEMICONDUCTORS  
7
厂商 型号 描述 页数 下载

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