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UZXT11N15DFTC

型号：

UZXT11N15DFTC

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

6 页

PDF大小：

410 K

下载PDF手册
ZXT11N15DF  
SuperSOT4™  
15V NPN SILICON LOW SATURATION TRANSISTOR  
SUMMARY  
V
CEO=15V; RSAT = 37m ; IC= 3A  
DESCRIPTION  
This new 4th generation ultra low saturation transistor utilises the Zetex  
matrix structure combined with advanced assembly techniques to give  
extremely low on state losses. This makes it ideal for high efficiency, low  
voltage switching applications.  
SOT23  
FEATURES  
•
•
•
•
•
Extremely Low Equivalent On Resistance  
Extremely Low Saturation Voltage  
h
FE characterised up to 5A  
IC=3A Continuous Collector Current  
SOT23 package  
APPLICATIONS  
•
•
•
•
DC - DC Converters  
Power Management Functions  
Power switches  
E
C
Motor control  
B
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH  
(mm)  
QUANTITY  
PER REEL  
Top View  
ZXT11N15DFTA  
ZXT11N15DFTC  
7
8mm embossed  
8mm embossed  
3000 units  
10000 units  
13  
DEVICE MARKING  
1N5  
ISSUE 1 - DECEMBER 1999  
1
ZXT11N15DF  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
LIMIT  
40  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
V
V
V
CBO  
CEO  
EBO  
15  
V
7.5  
5
V
I
I
I
A
CM  
Continuous Collector Current  
Base Current  
3
A
C
B
500  
mA  
Power Dissipation at TA=25°C (a)  
Linear Derating Factor  
P
625  
5
mW  
mW/°C  
D
Power Dissipation at TA=25°C (b)  
Linear Derating Factor  
P
806  
6.4  
mW  
mW/°C  
D
Operating and Storage Temperature Range  
T :T  
-55 to +150  
°C  
j
stg  
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
Junction to Ambient (a)  
Junction to Ambient (b)  
R
R
200  
155  
°C/W  
°C/W  
θJA  
θJA  
NOTES  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,  
in still air conditions  
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.  
ISSUE 1 - DECEMBER 1999  
2
ZXT11N15DF  
TYPICAL CHARACTERISTICS  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
10  
DC  
1
1s  
100ms  
10ms  
100m  
10m  
1ms  
100µs  
Single Pulse Tamb=25°C  
0
20  
40  
60  
80  
100 120 140 160  
100m  
1
10  
VCE Collector-Emitter Voltage (V)  
Temperature (°C)  
Derating Curve  
Safe Operating Area  
225  
200  
175  
150  
125  
100  
75  
D=0.5  
Single Pulse  
D=0.2  
50  
D=0.05  
25  
D=0.1  
10m 100m  
0
100µ  
1m  
1
10  
100  
1k  
Pulse Width (s)  
Transient Thermal Impedance  
ISSUE 1 - DECEMBER 1999  
3
ZXT11N15DF  
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX.  
UNIT  
CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V
V
V
40  
15  
7.5  
V
I =100␮A  
(BR)CBO  
(BR)CEO  
C
Collector-Emitter Breakdown  
Voltage  
V
I =10mA*  
C
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
V
I =100␮A  
E
(BR)EBO  
CBO  
I
I
I
100  
100  
100  
nA  
nA  
nA  
V
V
V
=32V  
=6V  
CB  
Emitter Cut-Off Current  
EBO  
EB  
Collector Emitter Cut-Off Current  
=32V  
CES  
CES  
Collector-Emitter Saturation  
Voltage  
V
7
57  
10  
80  
mV  
mV  
mV  
mV  
I =0.1A, I =10mA*  
C B  
CE(sat)  
I =1A, I =10mA*  
C
B
37  
55  
I =1A, I =100mA*  
C B  
110  
150  
I =3A, I =150mA*  
C B  
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
V
V
h
0.9  
1.0  
V
V
I =3A, I =150mA*  
C B  
BE(sat)  
BE(on)  
FE  
0.85 1.0  
I =3A, V =2V*  
C CE  
Static Forward Current Transfer  
Ratio  
200  
300  
250  
200  
150  
I =10mA, V =2V*  
C CE  
900  
I =200mA, V =2V*  
C
C
CE  
I =1A, V =2V*  
CE  
I =3A, V =2V*  
C
CE  
CE  
I =5A, V =2V*  
C
Transition Frequency  
f
145  
MHz  
I =50mA, V =10V  
T
C
CE  
f=50MHz  
Output Capacitance  
Turn-On Time  
C
26  
110  
220  
pF  
ns  
ns  
V
=10V, f=1MHz  
CB  
obo  
(on)  
(off)  
t
t
V
=10V, I =3A  
CC C  
=I =30mA  
I
B1 B2  
Turn-Off Time  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%  
ISSUE 1 - DECEMBER 1999  
4
ZXT11N15DF  
TYPICAL CHARACTERISTICS  
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
Tamb=25°C  
IC/IB=50  
100m  
10m  
1m  
100°C  
IC/IB=100  
IC/IB=50  
25°C  
-55°C  
IC/IB=10  
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
10  
IC Collector Current (A)  
IC Collector Current (A)  
VCE(SAT) v IC  
VCE(SAT) v IC  
VCE=2V  
IC/IB=50  
1.0  
0.8  
0.6  
0.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
100°C  
25°C  
-55°C  
25°C  
100°C  
-55°C  
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
10  
IC Collector Current (A)  
IC Collector Current (A)  
hFE v IC  
VBE(SAT) v IC  
VCE=2V  
-55°C  
1.0  
0.8  
0.6  
0.4  
25°C  
100°C  
1m  
10m  
100m  
1
10  
IC Collector Current (A)  
VBE(ON) v IC  
ISSUE 1 - DECEMBER 1999  
5
ZXT11N15DF  
PACKAGE DIMENSIONS  
PAD LAYOUT DETAILS  
DIM Millimetres  
Inches  
Min  
Min  
Max  
3.05  
1.40  
1.10  
0.53  
0.15  
Max  
A
B
C
D
F
2.67  
0.105  
0.120  
0.055  
0.043  
0.021  
0.0059  
1.20  
0.047  
–
–
0.37  
0.0145  
0.0033  
NOM 0.075  
0.0004  
0.0825  
NOM 0.037  
0.085  
NOM 1.9  
0.01  
G
K
L
0.10  
2.50  
0.004  
2.10  
0.0985  
N
NOM 0.95  
Zetex plc.  
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.  
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)  
Fax: (44)161 622 4420  
Zetex GmbH  
Zetex Inc.  
Zetex (Asia) Ltd.  
3510 Metroplaza, Tower 2  
Hing Fong Road,  
Kwai Fong, Hong Kong  
Telephone:(852) 26100 611  
Fax: (852) 24250 494  
These are supported by  
agents and distributors in  
major countries world-wide  
© Zetex plc 1999  
Streitfeldstraße 19  
D-81673 München  
Germany  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
47 Mall Drive, Unit 4  
Commack NY 11725  
USA  
Telephone: (631) 543-7100  
Fax: (631) 864-7630  
Internet:http://www.zetex.com  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for  
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves  
the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
ISSUE 1 - DECEMBER 1999  
6
厂商 型号 描述 页数 下载

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DIODES

 		UZX3CD2S1M832TC [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX3CDBS1M832TA [ Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX3CDBS1M832TC [ Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

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DIODES

 		UZX5T849GTC [ Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T853GTA [ Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

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