IXSH25N120A
IC25
= 50 A
IGBT
Improved SCSOA Capability
VCES = 1200 V
VCE(sat) = 4.0 V
Symbol
Test Conditions
Maximum Ratings
TO-247AD
VCES
VCGR
TJ = 25°C to 150°C
1200
1200
V
V
TJ = 25°C to 150°C; RGE = 1 MW
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
E
IC25
IC90
ICM
TC = 25°C
50
25
80
A
A
A
TC = 90°C
TC = 25°C, 1 ms
SSOA
VGE = 15 V, TJ = 125°C, RG = 33 W
ICM = 50
A
(RBSOA)Clamped inductive load, L = 100 µH
@ 0.8 VCES
tsc
PC
TJ = 125ºC, VCE = 720 V; VGE = 15V, RG = 33W
10
µs
W
TC = 25°C
200
TJ
-55 ... +150
150
°C
°C
°C
TJM
TSTG
Features
-55 ... +150
• SecondgenerationHDMOSTM process
Low VCE(sat)
- forminimumon-stateconduction
losses
Md
Mountingtorque
1.15/10
6
Nm/lb-in.
Weight
g
Max. Lead Temperature for
300
°C
• MOS Gate turn-on
- drive simplicity
Soldering (1.6mm from case for 10s)
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
• AC motor speed control
• DC servo and robot drives
• Uninterruptiblepowersupplies(UPS)
• Switched-modeandresonant-mode
power supplies
BVCES
VGE(th)
ICES
IC = 3 mA, VGE = 0 V
IC = 2.5 mA, VCE = VGE
1200
4
V
V
8
• DC choppers
VCE = 0.8 VCES , VGE= 0 V
Note 2
TJ = 25°C
TJ = 125°C
200 mA
mA
Advantages
1
IGES
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
+ 100 nA
4.0
• Easy to mount (isolated mounting
hole)
• Reduces assembly time and cost
VCE(sat)
V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
95593A(7/00)
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