IXSH25N120AU1
IGBT with Diode
IC25
= 50 A
"S" Series - Improved SCSOA Capability
VCES = 1200 V
VCE(sat) = 4.0 V
C
G
E
Symbol
Test Conditions
Maximum Ratings
TO-247 AD
VCES
VCGR
TJ = 25°C to 150°C
1200
1200
V
V
TJ = 25°C to 150°C; RGE = 1 MW
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
E
C
IC25
IC90
ICM
TC = 25°C
50
25
80
A
A
A
TC = 90°C
TC = 25°C, 1 ms
Features
SSOA
VGE = 15 V, TJ = 125°C, RG = 33 W
ICM = 50
A
(RBSOA)
Clamped inductive load, L = 100 µH
TJ = 125ºC, VCE = 720 V; VGE = 15V, RG = 33W
TC = 25°C
@ 0.8 VCES
• High frequency IGBT with guaranteed
short circuit SOA capability.
• IGBT with anti-paralleldiode in one
package
tsc
PC
10
µs
W
200
• 2nd generation HDMOSTM process
Low VCE(sat)
TJ
TJM
TSTG
-55 ... +150
150
-55 ... +150
°C
°C
°C
- forminimumon-stateconduction
losses
• MOS Gate turn-on
Md
Mountingtorque
1.15/10 Nm/lb-in.
- drive simplicity
Weight
6
g
Max. Lead Temperature for
Soldering (1.6mm from case for 10s)
300
°C
Applications
• AC motor speed control
• DC servo and robot drives
• Uninterruptiblepowersupplies
(UPS)
• Switched-modeandresonant-mode
powersupplies
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min.
1200
4
Typ.
Max.
• DC choppers
BVCES
VGE(th)
IC = 4 mA, VGE = 0 V
IC = 2.5 mA, VCE = VGE
V
V
Advantages
8
ICES
VCE = 0.8 VCES , VGE= 0 V
Note 2
TJ = 25°C
500 mA
• Saves space (two devices in one
package)
TJ = 125°C
8 mA
• Easy to mount (isolated mounting
hole)
• Reduces assembly time and cost
• Operates cooler
IGES
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
+ 100 nA
VCE(sat)
4.0
V
• Easier to assemble
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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