IXSH/IXST 30N60B
IXSH/IXST 30N60C
Symbol
gfs
TestConditions
Characteristic Values
(T = 25°C, unless otherwise specified)
TO-247 AD Outline
J
min. typ. max.
I
= I ; V = 10 V,
10
S
C
C90
CE
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
3100
240
30
pF
pF
pF
V
= 25 V, V = 0 V, f = 1 MHz
CE
GE
Qg
100
30
nC
nC
nC
Qge
Qgc
I
= I , V = 15 V, V = 0.5 V
CES
C
C90
GE
CE
38
td(on)
tri
30
30
ns
ns
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Inductive load, TJ = 25°C
= I , V = 15 V
td(off)
30N60B
30N60C
150
90
270 ns
150 ns
I
C
C90
GE
V
Note 1
= 0.8 V , R = 4.7 Ω
CE
CES
G
tfi
30N60B
30N60C
140
70
270 ns
120 ns
Eoff
30N60B
30N60C
1.5
0.7
2.5 mJ
1.2 mJ
td(on)
tri
35
35
ns
ns
Inductive load, TJ = 125°C
= I , V = 15 V
I
C
C90
GE
Eon
td(off)
0.5
mJ
V
Note 1
= 0.8 V , R = 4.7 Ω
CE
CES
G
30N60B
30N60C
270
150
ns
ns
TO-268 Outline
tfi
30N60B
30N60C
250
140
ns
Eoff
30N60B
30N60C
2.5
1.2
mJ
mJ
RthJC
RthCK
0.62 K/W
K/W
(TO-247)
0.25
Notes: 1. Switching times may increase for V (Clamp) > 0.8 V , higher T or
increased R .
CE
CES
J
G
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
