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NZL5V6ATT1/D

型号:

NZL5V6ATT1/D

描述:

SC75双共阳极齐纳的ESD保护\n[ SC75 Dual Common Anode Zener for ESD Protection ]

品牌:

ETC[ ETC ]

页数:

4 页

PDF大小:

43 K

NZL5V6ATT1  
SC75 Dual Common Anode  
Zener for ESD Protection  
This dual monolithic silicon voltage suppressor is designed for  
applications requiring transient overvoltage protection capability. It is  
intended for use in voltage and ESD sensitive equipment such as  
computers, printers, business machines, communication systems,  
medical equipment, and other applications. Its dual junction common  
anode design protects four separate lines using only one package.  
These devices are ideal for situations where board space is at a  
premium.  
http://onsemi.com  
CATHODE  
1
3
2
ANODE  
CATHODE  
Specification Features  
SC−75 Package Allows Two Separate Unidirectional Configurations  
Low Leakage < 1 mA @ 3 Volt  
3
Breakdown Voltage: 5.3−5.9 Volt @ 1 mA  
Low Capacitance (40 pF typical between terminals)  
ESD Protection Meeting IEC61000−4−2  
2
1
SC−75  
CASE 463  
STYLE 4  
Mechanical Characteristics  
Void Free, Transfer−Molded, Thermosetting Plastic Case  
Corrosion Resistant Finish, Easily Solderable  
Package Designed for Optimal Automated Board Assembly  
Small Package Size for High Density Applications  
MARKING DIAGRAM  
56  
56 = Device Marking  
ORDERING INFORMATION  
Device  
NZL5V6ATT1  
Package  
Shipping  
3000/Tape & Reel  
SC−75  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
February, 2001 − Rev. 1  
NZL5V6ATT1/D  
NZL5V6ATT1  
ELECTRICAL CHARACTERISTICS  
I
(T = 25°C unless otherwise noted)  
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)  
A
I
F
Symbol  
Parameter  
I
PP  
Maximum Reverse Peak Pulse Current  
V
C
Clamping Voltage @ I  
PP  
V
C
V
V
BR RWM  
V
I
V
F
V
RWM  
Working Peak Reverse Voltage  
R
T
I
I
R
Maximum Reverse Leakage Current @ V  
RWM  
V
Breakdown Voltage @ I  
Test Current  
BR  
T
I
T
I
PP  
QV  
Maximum Temperature Coefficient of V  
Forward Current  
BR  
BR  
I
F
Uni−Directional TVS  
V
F
Forward Voltage @ I  
F
Z
Maximum Zener Impedance @ I  
Reverse Current  
ZT  
ZT  
I
ZK  
Z
ZK  
Maximum Zener Impedance @ I  
ZK  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Characteristic  
Steady State Power − 1 Diode (Note 1)  
Maximum Junction Temperature  
Symbol  
Value  
150  
Unit  
P
D
mW  
°C  
T
Jmax  
150  
Operating Junction and Storage Temperature Range  
T T  
−55 to +150  
°C  
J
stg  
ESD Discharge  
IEC61000−4−2, Air Discharge  
IEC61000−4−2, Contact Discharge  
V
PP  
"15  
"8  
kV  
Lead Solder Temperature (10 seconds duration)  
T
L
260  
°C  
ELECTRICAL CHARACTERISTICS  
Typical  
Capacitance  
@ 0 V Bias  
@ 1 MHz  
Breakdown Voltage  
Leakage Current  
I @ V = 3.0 V  
RM  
Max  
V @ I = 10 mA  
V
BR  
@ 1 mA (Volts)  
RM  
F
F
Device  
Min  
Nom  
Max  
(mA)  
(pF)  
(V)  
1.25  
NZL5V6  
5.3  
5.6  
5.9  
1.0  
40  
1. Only 1 diode under power. For all 4 diodes under power, P will be 25%. Mounted on FR−4 board with min pad.  
D
300  
250  
200  
100  
90  
80  
70  
60  
50  
40  
30  
20  
PEAK VALUE I  
@ 8 ms  
t
r
RSM  
PULSE WIDTH (t ) IS DEFINED  
AS THAT POINT WHERE THE  
PEAK CURRENT DECAY = 8 ms  
p
HALF VALUE I  
/2 @ 20 ms  
RSM  
150  
100  
50  
t
p
10  
0
0
0
25  
50  
75  
100  
125  
150  
175  
0
20  
40  
t, TIME (ms)  
60  
80  
TEMPERATURE (°C)  
Figure 1. Steady State Power Derating Curve  
Figure 2. 8 X 20 ms Pulse Waveform  
http://onsemi.com  
2
NZL5V6ATT1  
100  
45  
40  
35  
30  
25  
20  
15  
10  
10  
5
NOTE: Non−Repetitive Surge  
100  
1
0
10  
1000  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
t , PULSE WIDTH (ms)  
p
BIAS VOLTAGE (V)  
Figure 3. Pulse Rating Curve  
Figure 4. Capacitance  
100  
10  
1
1
0.1  
0.01  
1.0 ms SQUARE WAVE  
0.001  
0.6 0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
1.4  
4
4.2 4.4 4.6 4.8  
5
5.2 5.4 5.6 5.8  
6
V , FORWARD VOLTAGE (V)  
F
V , CLAMPING VOLTAGE (V)  
C
Figure 5. Forward Current versus  
Forward Voltage  
Figure 6. Clamping Voltage versus Peak Pulse  
Current (Reverse Direction)  
http://onsemi.com  
3
NZL5V6ATT1  
PACKAGE DIMENSIONS  
SC−75 (SC−90, SOT−416)  
CASE 463−01  
ISSUE B  
−A−  
NOTES:  
S
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
2
3
MILLIMETERS  
INCHES  
G
−B−  
DIM MIN  
MAX  
0.80  
1.80  
0.90  
0.30  
MIN  
MAX  
0.031  
0.071  
0.035  
0.012  
1
A
B
C
D
G
H
J
0.70  
1.40  
0.60  
0.15  
0.028  
0.055  
0.024  
0.006  
D 3 PL  
0.20 (0.008)  
M
B
0.20 (0.008) A  
K
1.00 BSC  
0.039 BSC  
−−−  
0.10  
1.45  
0.10  
0.10  
0.25  
1.75  
0.20  
−−−  
0.004  
0.057  
0.004  
0.004  
0.010  
0.069  
0.008  
K
L
J
S
0.50 BSC  
0.020 BSC  
C
STYLE 4:  
PIN 1. CATHODE  
2. CATHODE  
3. ANODE  
L
H
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,  
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or  
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold  
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable  
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
Literature Fulfillment:  
JAPAN: ON Semiconductor, Japan Customer Focus Center  
4−32−1 Nishi−Gotanda, Shinagawa−ku, Tokyo, Japan 141−0031  
Phone: 81−3−5740−2700  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: ONlit@hibbertco.com  
Email: r14525@onsemi.com  
ON Semiconductor Website: http://onsemi.com  
For additional information, please contact your local  
Sales Representative.  
N. American Technical Support: 800−282−9855 Toll Free USA/Canada  
NZL5V6ATT1/D  
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